Abstract: Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.

Abstract: A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

Abstract: A photonic integrated circuit package includes a first substrate including a first mirror and an optical coupling device spaced apart from each other, and a second substrate on an upper portion of the first substrate, the second substrate including an electro-optical converter and a second mirror, the electro-optical converter to output an optical signal to the first mirror, and the second mirror to reflect an optical signal reflected by and received from the first mirror to the optical coupling device.

Abstract: Photonic integrated circuit packages having improved integration, and methods of manufacturing such photonic integrated circuit packages, are provided. As an example, a photonic integrated circuit package may include a substrate, a first insulating layer on the substrate, a photonic core layer on the first insulating layer, and a second insulating layer on the photonic core layer. A photonic coupling device may be in the photonic core layer, and may be, as examples, at least one of a grating coupler or a photodetector. A concave mirror may extend into at least the second insulating layer. In some embodiments, the concave mirror may extend through the second insulating layer and into the first insulating layer.

Abstract: A photonic integrated circuit includes a main light source, a redundant light source, a controller, an optical switch, and a modulator. The main light source outputs main light through a main light input waveguide. The redundant light source outputs redundant light through a redundant light transmission waveguide. The controller generates a first switch signal based on a fault state of the main light source. The optical switch selectively provides the redundant light from the redundant light transmission waveguide to a redundant light input waveguide based on the first switch signal. The modulator modulates main light from the main light input waveguide or redundant light from the redundant light input waveguide and outputs a first optical signal.

Abstract: A semiconductor device includes a first device and a second device. The first device includes at least one waveguide on a first substrate. The second device is on the first device and includes at least one optical fiber on an upper surface of a second substrate, a reflector on the upper surface of the second substrate, and a lens on a lower surface of the second substrate below the reflector. The at least one waveguide to carry light from the reflector and passing through the lens for output to the optical fiber.

Abstract: A photonic integrated circuit includes a main light source, a redundant light source, a controller, an optical switch, and a modulator. The main light source outputs main light through a main light input waveguide. The redundant light source outputs redundant light through a redundant light transmission waveguide. The controller generates a first switch signal based on a fault state of the main light source. The optical switch selectively provides the redundant light from the redundant light transmission waveguide to a redundant light input waveguide based on the first switch signal. The modulator modulates main light from the main light input waveguide or redundant light from the redundant light input waveguide and outputs a first optical signal.

Abstract: An optical integrated circuit (IC) package includes an optical IC including an optical IC substrate, an optical IC including an optical IC substrate, an electrical integrated circuit device (EICD) on the optical IC substrate, at least one optical device spaced apart from the EICD on the optical IC substrate, an optical interface on a first side of the optical IC substrate, an electrical interface located on a second side of the optical IC substrate, and an encapsulation member configured to encapsulate the optical IC, the EICD, the at least one optical device, the optical interface, and the electrical interface.

Abstract: A photodiode includes a semiconductor substrate, a crystalline layer on the semiconductor substrate, an insulating pattern layer on the crystalline layer to define a plurality of holes exposing a top surface of the crystalline layer, a seed layer in the plurality of holes and directly on the crystalline layer, and a light absorption layer on the seed layer and the insulating pattern layer.

Abstract: A photoelectric conversion device includes a substrate having a first surface and a second surface that is an opposite side of the first surface, wherein one of the first and second surfaces is a light incidence surface, a photodiode (PD) formed in the first surface of the substrate, a reflective layer formed on one of the first and second surfaces of the substrate, which is the opposite side of the light incidence surface, and a microlens formed on the light incidence surface of the substrate.

Abstract: An optical integrated circuit (IC) package includes an optical IC including an optical IC substrate, an optical IC including an optical IC substrate, an electrical integrated circuit device (EICD) on the optical IC substrate, at least one optical device spaced apart from the EICD on the optical IC substrate, an optical interface on a first side of the optical IC substrate, an electrical interface located on a second side of the optical IC substrate, and an encapsulation member configured to encapsulate the optical IC, the EICD, the at least one optical device, the optical interface, and the electrical interface.

Abstract: Integrated circuit device packages including optical elements are provided. The integrated circuit device package may include an integrated circuit device and a conductive pad on a first surface of the integrated circuit device. The conductive pad may be electrically connected to the integrated circuit device and may be configured to transmit an electrical signal. The integrated circuit device package may also include an optical element in the integrated circuit device and the optical element may be configured to transmit an optical signal through a second surface of the integrated circuit device that is opposite the first surface of the integrated circuit device.

Abstract: A photodiode includes a semiconductor substrate, a crystalline layer on the semiconductor substrate, an insulating pattern layer on the crystalline layer to define a plurality of holes exposing a top surface of the crystalline layer, a seed layer in the plurality of holes and directly on the crystalline layer, and a light absorption layer on the seed layer and the insulating pattern layer.

Abstract: An optical memory module comprises one or more memory devices configured to store data, and one or more optical interface modules configured to perform optical communication between the memory devices and an external device. Each of the optical interface modules comprises an input-output light distribution unit configured to divide received light to produce transmission light and reception light, an electrical-to-optical conversion unit configured to perform optical modulation based on the transmission light and an electrical transmission signal to generate an optical transmission signal, and a coherent optical-to-electrical conversion unit configured to perform a coherent reception based on the reception light and an optical reception signal to generate an electrical reception signal.

Abstract: A photoelectric conversion device includes a substrate having a first surface and a second surface that is an opposite side of the first surface, wherein one of the first and second surfaces is a light incidence surface, a photodiode (PD) formed in the first surface of the substrate, a reflective layer formed on one of the first and second surfaces of the substrate, which is the opposite side of the light incidence surface, and a microlens formed on the light incidence surface of the substrate.

Abstract: An optical memory module comprises one or more memory devices configured to store data, and one or more optical interface modules configured to perform optical communication between the memory devices and an external device. Each of the optical interface modules comprises an input-output light distribution unit configured to divide received light to produce transmission light and reception light, an electrical-to-optical conversion unit configured to perform optical modulation based on the transmission light and an electrical transmission signal to generate an optical transmission signal, and a coherent optical-to-electrical conversion unit configured to perform a coherent reception based on the reception light and an optical reception signal to generate an electrical reception signal.

Abstract: A photonic device is provided. The photonic device includes: a semiconductor layer including first and second regions; an insulating layer covering the semiconductor layer; and first and second plugs extending to pass through the insulating layer and electrically connected to the corresponding first and second regions. The first plug is in a rectifying contact with the first region, and the second plug is in an ohmic contact with the second region.

Abstract: An optical memory system according to example embodiments includes a plurality of memory modules, each memory module including a plurality of memory devices; a light source; a light distribution unit connected to the light source through a first optical transmission line; a plurality of second optical transmission lines connected between the light distribution unit and the plurality of memory modules; a plurality of electrical to optical converters, each connected to at least one of the second optical transmission lines; and a plurality of output optical transmission lines connected to the plurality of electrical to optical converters, each output optical transmission line for outputting an electrical to optical converted signal.

Abstract: A semiconductor package and a semiconductor device including the same. The semiconductor package includes: a package substrate; a plurality of connection elements that are disposed on the package substrate; and a semiconductor chip that includes at least one optical input/output element that transmits/receives an optical signal to/from the outside at an optical input/output angle with respect to a direction perpendicular to a bottom surface of the package substrate, and is electrically connected to the package substrate through the plurality of connection.

Abstract: A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.