Abstract: A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

Abstract: A method of suppressing distortion of a working laser beam directed for incidence on a target specimen presented for processing by a laser link processing system uses a spatial filter to remove stray light-induced distortion from the working laser beam.

Abstract: A system determines relative positions of a semiconductor substrate and a plurality of laser beam spots on or within the semiconductor substrate in a machine for selectively irradiating structures on or within the substrate using a plurality of laser beams. The system comprises a laser source, first and second laser beam propagation paths, first and second reflection sensors, and a processor. The laser source produces at least the first and second laser beams, which propagate toward the substrate along the first and second propagation paths, respectively, which have respective first and second axes that intersects the substrate at respective first and second spots. The reflection sensors are positioned to detect reflection of the spots, as the spots moves relative to the substrate, thereby generating reflection signals. The processor is configured to determine, based on the reflection signals, positions of the spots on or within the substrate.

Abstract: A method and system for increasing throughput of laser micromachining systems use more than one laser. Two or more pulsed laser beams are combined and then separated into multiple laser beams that enable the system to work simultaneously at multiple locations on the workpiece with pulse rates greater than those achievable with independently operating lasers while maintaining pulse energy equal to or greater than the pulse energy of each of the original independent laser beams. Most laser micromachining applications required multiple sequential pulses to process a workpiece. Increasing the pulse rate while maintaining pulse energy effects more rapid material removal and thereby increases throughput for a laser micromachining system.

Abstract: A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.

Abstract: A workpiece processing system employs a common modular imaged optics assembly and an optional variable beam expander for optically processing multiple laser beams. In one embodiment, a laser and a fixed beam expander cooperate to produce a laser beam that propagates through a beam switching device to produce multiple laser beams that propagate along separate propagation path portions and subsequently merge into a common path portion through an imaged optics assembly and optional variable expander. The beam expander sets the shape of the laser beams in the form of a Gaussian spatial distribution of light energy. The imaged optics assembly shapes the Gaussian spatial distribution of the laser beams to form output beams of uniform spatial distribution. In an alternative embodiment, the beam switching device is removed and the laser beams propagate from separate laser sources associated with separate optional beam expanders.

Abstract: Methods and systems selectively irradiate electrically conductive structures on or within a semiconductor substrate using multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates a first laser beam along a first propagation path having a first axis incident at a first location on or within the semiconductor substrate at a given time. The first location is either on a structure in a first row of structures or between two adjacent structures in the first row. The method also propagates a second laser beam along a second propagation path having a second axis incident at a second location on or within the semiconductor substrate at the given time. The second location is either on a structure in a second row of structures or between two adjacent structures in the second row.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row so as to complete irradiation of said structures with a single laser pulse per structure. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with either the first or the second laser beam.

Abstract: Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: A laser beam switching system employs a laser coupled to a beam switching device that causes a laser beam to switch between first and second beam positioning heads such that while the first beam positioning head is directing the laser beam to process a workpiece target location, the second beam positioning head is moving to another target location and vice versa. A preferred beam switching device includes first and second AOMs positioned such that the laser beam passes through the AOMs without being deflected. When RF is applied to the first AOM, the laser beam is diffracted toward the first beam positioning head, and when RF is applied to the second AOM, the laser beam is diffracted toward the second beam positioning head.

Abstract: Disclosed are compounds of formula(I): wherein Ar1, Ar2, R1, R2, R3, R4 and Xa are defined herein. The compounds of the invention inhibit Itk kinase and are therefore useful for treating diseases and pathological conditions involving inflammation, immunological disorders and allergic disorders. Also disclosed are processes for preparing these compounds and to pharmaceutical compositions comprising these compounds.

Abstract: Disclosed are substituted benzimidazole compounds of formula (I): wherein R1, R2, R3, R4 and Xa are defined herein. The compounds of the invention inhibit Itk kinase and are therefore useful for treating diseases and pathological conditions involving inflammation, immunological disorders and allergic disorders. Also disclosed are processes for preparing these compounds and to pharmaceutical compositions comprising these compounds.

Abstract: A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.