Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row so as to complete irradiation of said structures with a single laser pulse per structure. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with either the first or the second laser beam.

Abstract: Methods and systems selectively irradiate electrically conductive structures on or within a semiconductor substrate using multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. One method propagates a first laser beam along a first propagation path having a first axis incident at a first location on or within the semiconductor substrate at a given time. The first location is either on a structure in a first row of structures or between two adjacent structures in the first row. The method also propagates a second laser beam along a second propagation path having a second axis incident at a second location on or within the semiconductor substrate at the given time. The second location is either on a structure in a second row of structures or between two adjacent structures in the second row.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: A laser beam switching system employs a laser coupled to a beam switching device that causes a laser beam to switch between first and second beam positioning heads such that while the first beam positioning head is directing the laser beam to process a workpiece target location, the second beam positioning head is moving to another target location and vice versa. A preferred beam switching device includes first and second AOMs positioned such that the laser beam passes through the AOMs without being deflected. When RF is applied to the first AOM, the laser beam is diffracted toward the first beam positioning head, and when RF is applied to the second AOM, the laser beam is diffracted toward the second beam positioning head.

Abstract: Disclosed are compounds of formula(I): wherein Ar1, Ar2, R1, R2, R3, R4 and Xa are defined herein. The compounds of the invention inhibit Itk kinase and are therefore useful for treating diseases and pathological conditions involving inflammation, immunological disorders and allergic disorders. Also disclosed are processes for preparing these compounds and to pharmaceutical compositions comprising these compounds.

Abstract: Disclosed are substituted benzimidazole compounds of formula (I): wherein R1, R2, R3, R4 and Xa are defined herein. The compounds of the invention inhibit Itk kinase and are therefore useful for treating diseases and pathological conditions involving inflammation, immunological disorders and allergic disorders. Also disclosed are processes for preparing these compounds and to pharmaceutical compositions comprising these compounds.

Abstract: A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.

Abstract: A method of training neural systems and estimating regression coefficients of regression models with respect to an error criterion is disclosed. If the error criterion is a risk-averting error cri- terion, the invented method performs the training/estimation by starting with a small value of the risk-sensitivity index of the risk-averting error criterion and gradually increasing it to ensure numerical feasibility. If the error criterion is a risk-neutral error criterion such as a standard sum- of-squares error criterion, the invented method performs the training/estimation first with respect to a risk-averting error criterion associated with the risk-neutral error criterion. If the result is not satisfactory for the risk-neutral error criterion, further training/estimation is performed either by continuing risk-averting training/estimation with decreasing values of the associated risk-averting error criterion or by training/estimation with respect to the given risk-neutral error criterion or by both.

Abstract: A neural system is disclosed for processing an exogenous input process to produce a good outward output process with respect to a performance criterion, even if the range of one or both of these processes is necessarily large and/or keeps necessarily expanding during the operation of the neural system. The disclosed neural system comprises a recurrent neural network (RNN) and at least one range extender or reducer, each of which is a dynamic transformer. A range reducer transforms dynamically at least one component of the exogenous input process into inputs to at least one input neuron of said RNN. A range extender transforms dynamically outputs of at least one output neuron of said RNN into at least one component of the outward output process. There are many types of range extender and reducer, which have different degrees of effectiveness and computational costs.

Abstract: A method of fabricating a shallow trench isolation is disclosed. First, a pad oxide layer and a polysilicon layer are formed on a silicon substrate. The pad oxide layer and the polysilicon layer are etched to expose parts of the substrate. Then the exposed parts of the substrate are oxidized to form an oxide layer. Next, the oxide layer is etched back to form an oxide spacer on the side wall of the polysilicon. Then, a shallow trench is formed by etching the partly exposed substrate. Next, a dielectric layer is formed to fill the shallow trench and then etched back by CMP to stop on the polysilicon layer. Finally, the pad oxide layer and the polysilicon layer are removed. As a result, oxide spacers on the side wall of the shallow trench are formed to eliminate the kink-effect.

Abstract: A method of fabricating kink-effect-free shallow trench isolations is presented in this invention. First, a layer of silicon oxide and a layer of polysilican are sequentially deposited on a substrate, and then shallow trenches are formed, next thermal oxidation is performed to grow a passivation oxide layer on the exposed silicon, and then, a dielectric layer is formed to fill into the shallow trench. Finally, the dielectric layer on the active area is removed by using chemical mechanical polishing and the polysilicon layer provides for the etching end point. The level of shallow trench is higher than the level of active area as soon as stop polishing, because the polysilicon layer is polished faster than dielectric layer. It provides the passivation oxide on the sidewall of shallow trench to form spacers of the active area after removing the polysilicon of active area. It can provide a perfect shallow trench after an oxidation and etching process to avoid the kink effect.

Abstract: To enhance the safety and security of the operation of a railway network, a railway operation monitoring and diagnosing system is disclosed that monitors and diagnoses the entire railway network as an integrated system. The railway operation monitoring and diagnosing system comprises a railway operation predictor and a diagnosing means. The railway operation predictor generates anticipated values of selected railway operation state (ROS) variables. ROS variables may discrete or continuous. If there are continuous ROS variables selected, the railway operation predictor also determines the safety intervals of these continuous ROS variables. The diagnosing means examines the measured values of the selected ROS variables versus their anticipated values and/or safety intervals to detect and diagnose their discrepancies. A heuristics, statistics, fuzzy logic, artificial intelligence, neural network, or/and expert system is included in the diagnosing means for diagnosing the records of such discrepancies.

Abstract: A robust neural system for robust processing is disclosed for averting unacceptable or disastrous processing performances. This robust neural system either comprises a neural network or comprises a neural network and at least one range transformer. At least one adjustable weight of the robust neural system is a nonlinear weight of the neural work determined in a nonadaptive training of the robust neural system with respect to a nonadaptive risk-sensitive training criterion.If all the adjustable weights of the robust neural system are nonadaptively adjustable, all these weights are held fixed during the robust neural system's operation. If said neural network is recursive, and the nonadaptive training data used to construct said nonadaptive risk-sensitive training criterion contain data for each of a number of typical values of an environmental parameter, the robust neural system is not only robust but also adaptive to the environmental parameter.

Abstract: A recursive neurofilter comprising a recursive neural network (NN) is disclosed for processing an information process to estimate a signal process with respect to an estimation error criterion. The information process either consists of a measurement process, or if the signal and measurement processes are time-variant, consists of the measurement process as well as a time variance process, that describes the time-variant properties of the signal and measurement processes. The recursive neurofilter is synthesized from exemplary realizations of the signal and information processes. No assumptions such as Gaussian distribution, linear dynamics, additive noise, and Markov property are required. The synthesis is performed essentially through training recursive NNs. The training criterion is constructed to reflect the mentioned estimation error criterion with the exemplary realizations.

Abstract: An adaptive neural system (ANS) disclosed herein comprises a processor and an adaptor. The processor includes mainly a neural network whose adjustable weights are divided into nonadaptively and adaptively adjustable weights. The nonadaptively adjustable weights are determined through minimizing or reducing a nonadaptive training criterion in an off-line nonadaptive training. Being constructed with a priori training data, the nonadaptive training criterion is a function of the nonadaptively adjustable weights and the diversity variables associated with typical values of the environmental parameter. During an operation of the adaptive neural system, only the adaptively adjustable weights are adjusted on-line to adapt to the unknown environmental parameter. This adaptive training is achieved by minimizing or reducing an adaptive training criterion.

Abstract: A method and apparatus is provided for processing a measurement process to estimate a signal process, even if the signal and/or measurement processes have large and/or expanding ranges. The method synthesizes training data comprising realizations of the signal and measurement processes into a primary filter for estimating the signal process and, if required, an ancillary filter for providing the primary filter's estimation error statistics. The primary and ancillary filters each comprise an artificial recurrent neural network (RNN) and at least one range extender or reducer. Their implementation results in the filtering apparatus. Many types of range extender and reducer are disclosed, which have different degrees of effectiveness and computational cost.