Abstract: A process of forming bumps on conductive pads is provided. First, an adhesion layer made of titanium, titanium-wolfram alloy or chromium is formed on the conductive pads. Subsequently, a barrier layer made of nickel-vanadium alloy is formed on the adhesion layer. Next, a wettable layer made of copper is formed on the barrier layer. Subsequently, solder material is formed on the wettable layer. Subsequently, etching processes are performed to remove the wettable layer, the barrier layer and the adhesion layer that are exposed to the outside. The wettable layer, the barrier layer and the adhesion layer remain under the solder material. Afterward, a reflow process can be selectively performed.

Abstract: A method of forming bumps on the active surface of a silicon wafer. A first under-bump metallic layer is formed over the active surface of the wafer. A second under-bump metallic layer is formed over the first under-bump metallic layer. A portion of the second under-bump metallic layer is removed to expose the first under-bump metallic layer. A plurality of solder bumps is implanted onto the second under-bump metallic layer. The exposed first under-bump metallic layer is removed so that only the first under-bump metallic layer underneath the second under-bump metallic layer remains.

Abstract: A method for etching a nickel-vanadium alloy is described. The etching of the nickel-vanadium alloy is conducted using an etchant that comprises sulfuric acid. Further, the etching rate of the nickel-vanadium alloy is controlled based on the electrolytic reaction between the etchant and the nickel-vanadium alloy thin film.

Abstract: The present invention provides a bump fabrication process. A wafer is provided with a patterned photoresist layer formed on the wafer. The patterned photoresist layer has a plurality of openings, corresponding to bonding pads. A conductive layer is formed on the photoresist layer and the exposed bonding pads. Afterwards, a sticker film is provided to lift off the conductive layer on the photoresist layer, while the conductive layer within the openings is not removed. A solder paste is filled into the openings. A reflow step is performed to turn the filled solder paste into globular bumps. At last, the photoresist layer is removed.

Abstract: A flex or TAB product suitable for chip carrier applications wherein the flex reliability problems caused by copper dendrite growth and lead bending during power and thermal cycling are reduced by application of special coatings to lead areas of the flex tape.

Abstract: An interconnection structure suitable for the connection of microelectronic circuit chips to packages is provided by this invention. In particular, the invention pertains to the area-array or flip-chip technology often called C4 (controlled collapse chip connection). The structure comprises an adhesion/barrier layer deposited on a passivated substrate (e.g., a silicon wafer), optionally an additional adhesion layer, a solderable layer of a metal selected from the group consisting of Ni, Co, Fe, NiFe, NiCo, CoFe and NiCoFe on the adhesion/barrier layer, and a lead-free solder ball comprising tin as the predominate component and one or more alloying elements selected from Bi, Ag, and Sb, and further optionally including one or more elements selected from the group consisting of Zn, In, Ni, Co and Cu.

Abstract: A structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

Abstract: A flex or TAB product suitable for chip carrier applications wherein the flex reliability problems caused by copper dendrite growth and lead bending during power and thermal cycling are reduced by application of special coatings to lead areas of the flex tape.

Abstract: A process for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

Abstract: An in-situ chemical-mechanical polishing process monitor apparatus for monitoring a polishing process during polishing of a workpiece in a polishing machine, the polishing machine having a rotatable polishing table provided with a polishing slurry, is disclosed. The apparatus comprises a window embedded within the polishing table, whereby the window traverses a viewing path during polishing and further enables in-situ viewing of a polishing surface of the workpiece from an underside of the polishing table during polishing as the window traverses a detection region along the viewing path. A reflectance measurement means is coupled to the window on the underside of the polishing table for measuring a reflectance, the reflectance measurement means providing a reflectance signal representative of an in-situ reflectance, wherein a prescribed change in the in-situ reflectance corresponds to a prescribed condition of the polishing process.

Abstract: The present invention relates to an improved flex (or TAB) product suitable for silicon carrier or other types of chip carrier applications, wherein the flex reliability problems caused for example by Cu thermal cycling are substantially reduced or eliminated. More particularly, the invention embodies a number of coatings for use in such products and diverse methods of making and using same.

Abstract: A conductor attachment wherein each conductor is mounted on a dielectric tape and has an attachment portion that is supported by the tape to an adjacent location a uniform distance from the bonding location and that contacts on a level with the plane of the underside of the tape. One conductor supporting tape has portions of the tape that extend into a central contacting area opening to contact locations at contacting pads in rows remote from the edge. Another supporting tape has window openings at the contacting locations. The conductor ends are brought into the level of the underside of the tape by a manufacturing rolling operation between an elastomer surface roller and a solid backing roller.

Abstract: Disclosed is a reworkable circuit .package formed by controlled collapse chip connection ("C4") bonding of integrated circuit chips to circuit cards and boards, and direct chip attachment ("DCA") where an encapsulant is disposed under the chip. The encapsulant offers protection of the C4 connections and a thermal expansion matched to that of the C4 joints. However, most encapsulants interfere with reworkability. The disclosed circuit package overcomes this problem by the provision of a passivating layer of Parylene is reworkable, dry processable, uniformly depositable by vapor phase deposition, forming thin films on facing surfaces at the 3-5 micron film thickness corresponding to the C4 lift-off distance.

Abstract: A hermetic package for an electronic device is manufactured by providing a green glass ceramic body with a green via to produce a workpiece. The workpiece is sintered at a temperature at or above 500.degree. C., while compressing the workpiece at a pressure at or above 100 pounds per square inch, so as to obtain a hermetic package. The green via comprises a mixture of copper and a glass ceramic material with a sufficient volume of glass to produce a hermetic package, yet with sufficient copper to have a suitable electrical conductivity.The hermetic package thus produced comprises a sintered glass ceramic body having an electrically conductive sintered via which is hermetically bonded to the glass ceramic body and which comprises a mixture of an electrically conductive material and a glass ceramic material. The electrically conductive material forms at most 50 volume percent of the via.The workpiece may be sintered in a sintering fixture having a frame and a compensating insert.

Abstract: A conductor attachment wherein each conductor is mounted on a dielectric tape and has an attachment portion that is supported by the tape to an adjacent location a uniform distance from the bonding location and that contacts on a level with the plane of the underside of the tape. One conductor supporting tape has portions of the tape that extend into a central contacting area opening to contact locations at contacting pads in rows remote from the edge. Another supporting tape has window openings at the contacting locations. The conductor ends are brought into the level of the underside of the tape by a manufacturing rolling operation between an elastomer surface roller and a solid backing roller.

Abstract: A method for bonding conductors to semiconductor chip contact pads wherein each conductor is mounted on a dielectric tape and has an attachment portion that is supported by the tape to an adjacent location a uniform distance from the bonding location and that contacts on a level with the plane of the underside of the tape. One conductor supporting tape has portions of the tape that extend into a central contacting area opening to contact locations at contacting pads in rows remote from the edge. Another supporting tape has window openings at the contacting locations. The conductor ends are brought into the level of the underside of the tape by a manufacturing rolling operation between an elastomer surface roller and a solid backing roller.

Abstract: A hermetic package for an electronic device is manufactured by providing a green glass ceramic body with a green via to produce a workpiece. The workpiece is sintered at a temperature at or above 500.degree. C., while compressing the workpiece at a pressure at or above 100 pounds per square inch, so as to obtain a hermetic package. The green via comprises a mixture of copper and a glass ceramic material with a sufficient volume of glass to produce a hermetic package, yet with sufficient copper to have a suitable electrical conductivity.The hermetic package thus produced comprises a sintered glass ceramic body having an electrically conductive sintered via which is hermetically bonded to the glass ceramic body and which comprises a mixture of an electrically conductive material and a glass ceramic material. The electrically conductive material forms at most 50 volume percent of the via.The workpiece may be sintered in a sintering fixture having a frame and a compensating insert.

Abstract: A hermetic package for an electronic device is manufactured by providing a green glass ceramic body with a green via to produce a workpiece. The workpiece is sintered at a temperature at or above 500.degree. C., while compressing the workpiece at a pressure at or above 100 pounds per square inch, so as to obtain a hermetic package. The green via comprises a mixture of copper and a glass ceramic material with a sufficient volume of glass to produce a hermetic package, yet with sufficient copper to have a suitable electrical conductivity.The hermetic package thus produced comprises a sintered glass ceramic body having an electrically conductive sintered via which is hermetically bonded to the glass ceramic body and which comprises a mixture of an electrically conductive material and a glass ceramic material. The electrically conductive material forms at most 50 volume percent of the via.The workpeice may be sintered in a sintering fixture having a frame and a compensating insert.

Abstract: In integrated circuit packaging, chips are bonded to one side of an intermediate wafer that is resiliently mounted at the periphery with the entire other side of the intermediate wafer being maintained in conformal thermal transfer to external heat dissipation free of any solid connection.

Abstract: A conductor attachment wherein each conductor is mounted on a dielectric tape and has an attachment portion that is supported by the tape to an adjacent location a uniform distance from the bonding location and that contacts on a level with the plane of the underside of the tape. One conductor supporting tape has portions of the tape that extend into a central contacting area opening to contact locations at contacting pads in rows remote from the edge. Another supporting tape has window openings at the contacting locations. The conductor ends are brought into the level of the underside of the tape by a manufacturing rolling operation between an elastomer surface roller and a solid backing roller.