Patents by Inventor Ho Seon Shin
Ho Seon Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7297047Abstract: A method and apparatus for the delivery of slurry solution comprising an ultrasonic flow meter positioned between a fluid preparation manifold and a slurry delivery arm, and a shutoff valve positioned between a proportional valve and the slurry delivery arm. Also, a method and apparatus for the delivery of slurry solution including an ultrasonic flow meter positioned to receive fluid from a fluid preparation manifold, a proportional valve and stepper motor in communication with the flow meter, and a reverse flow restrictor in communication with the proportional valve and a slurry delivery arm.Type: GrantFiled: December 1, 2005Date of Patent: November 20, 2007Assignee: Applied Materials, Inc.Inventors: Songjae Lee, Ho Seon Shin, Donald J. K. Olgado
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Patent number: 7192494Abstract: A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.Type: GrantFiled: June 30, 2003Date of Patent: March 20, 2007Assignee: Applied Materials, Inc.Inventors: B. Michelle Chen, Ho Seon Shin, Yezdi Dordi, Ratson Morad, Robin Cheung
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Publication number: 20050221603Abstract: Provided herein is a system architecture of semiconductor manufacturing equipment, wherein degas chamber(s) are integrated to the conventional pass-through chamber location. Also provided herein is a system/method for depositing Cu barrier and seed layers on a semiconductor wafer. This system comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.Type: ApplicationFiled: May 24, 2005Publication date: October 6, 2005Inventors: Ratson Morad, Ho Seon Shin
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Patent number: 6929774Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.Type: GrantFiled: November 4, 2003Date of Patent: August 16, 2005Assignee: Applied Materials, Inc.Inventors: Ratson Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Patent number: 6897146Abstract: A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.Type: GrantFiled: June 23, 2003Date of Patent: May 24, 2005Assignee: Applied Materials, Inc.Inventors: Ratson Morad, Ho Seon Shin
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Publication number: 20040154185Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.Type: ApplicationFiled: November 4, 2003Publication date: August 12, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Ratson Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Publication number: 20040084301Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.Type: ApplicationFiled: October 20, 2003Publication date: May 6, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Anna Marie Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier
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Publication number: 20040087154Abstract: Provided herein is a system architecture of semiconductor manufacturing equipment, wherein degas chamber(s) are integrated to the conventional pass-through chamber location. Also provided herein is a system/method for depositing Cu barrier and seed layers on a semiconductor wafer. This system comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.Type: ApplicationFiled: June 23, 2003Publication date: May 6, 2004Applicant: Applied Materials, Inc.Inventors: Ratson Morad, Ho Seon Shin
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Publication number: 20040003873Abstract: A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system.Type: ApplicationFiled: June 30, 2003Publication date: January 8, 2004Applicant: Applied Materials, Inc.Inventors: B. Michelle Chen, Ho Seon Shin, Yezdi Dordi, Ratson Morad, Robin Cheung
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Patent number: 6658763Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.Type: GrantFiled: November 12, 2002Date of Patent: December 9, 2003Assignee: Applied Materials, Inc.Inventors: Ratson Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Patent number: 6635157Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.Type: GrantFiled: May 29, 2001Date of Patent: October 21, 2003Assignee: Applied Materials, Inc.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier
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Patent number: 6599368Abstract: A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer load lock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.Type: GrantFiled: October 5, 2000Date of Patent: July 29, 2003Assignee: Applied Materials, Inc.Inventors: Ratson Morad, Ho Seon Shin
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Publication number: 20030131495Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.Type: ApplicationFiled: November 12, 2002Publication date: July 17, 2003Inventors: Ratson Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Patent number: 6477787Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.Type: GrantFiled: February 11, 2002Date of Patent: November 12, 2002Assignee: Applied Materials, Inc.Inventors: Ratson Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Publication number: 20020116836Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.Type: ApplicationFiled: February 11, 2002Publication date: August 29, 2002Inventors: Ratson Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Patent number: 6357143Abstract: A method and apparatus for heating and cooling a substrate. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.Type: GrantFiled: July 20, 2001Date of Patent: March 19, 2002Assignee: Applied Materials, Inc.Inventors: Ratson Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Publication number: 20020029961Abstract: The present invention provides an electrochemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electrochemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electrochemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electrochemical deposition process and the components of the electrochemical deposition system.Type: ApplicationFiled: May 29, 2001Publication date: March 14, 2002Applicant: Applied Materials, Inc.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Anna Marie Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier
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Publication number: 20020007567Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism.Type: ApplicationFiled: July 20, 2001Publication date: January 24, 2002Inventors: Raston Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Patent number: 6276072Abstract: A method and apparatus for heating and cooling a substrate are provided. A chamber is provided that comprises a heating mechanism adapted to heat a substrate positioned proximate the heating mechanism, a cooling mechanism spaced from the heating mechanism and adapted to cool a substrate positioned proximate the cooling mechanism, and a transfer mechanism adapted to transfer a substrate between the position proximate the heating mechanism and the position proximate the cooling mechanism. The heating mechanism preferably comprises a heated substrate support adapted to support a substrate and to heat the supported substrate to a predetermined temperature, and the cooling mechanism preferably comprises a cooling plate. The transfer mechanism may comprise, for example, a wafer lift hoop having a plurality of fingers adapted to support a substrate, or a plurality of wafer lift pins. A dry gas source may be coupled to the chamber and adapted to supply a dry gas thereto.Type: GrantFiled: September 15, 1999Date of Patent: August 21, 2001Assignee: Applied Materials, Inc.Inventors: Ratson Morad, Ho Seon Shin, Robin Cheung, Igor Kogan
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Patent number: 6258220Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.Type: GrantFiled: April 8, 1999Date of Patent: July 10, 2001Assignee: Applied Materials, Inc.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier