Abstract: An apparatus and method is provided for capturing, heating and degassing a wafer without using moving parts and without exposing the wafer to external stress. A degassing chamber is backfilled with a dry gas that improves wafer heating ramp rates and wafer heating uniformity. The backfilled gas efficiently conducts heat at relatively low pressures. Thus the degassing chamber may be evacuated via a cryo-pump without the need for an intermediate rough pumping step. Further, because the wafer is heated primarily by conduction, wafer temperatures are easily and precisely controlled independent of layers previously deposited on the wafer. Frontside heating elements such as heat generators and/or heat reflectors are provided that further improve wafer heating ramp rates and wafer heating uniformity by directing heat toward the front surface of the wafer. Preferably as heat radiates from the wafer it is reflected back to the wafer by a frontside reflector.