Abstract: Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).

Abstract: Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).

Abstract: Disclosed herein is a reactive sputtering deposition apparatus in which a partition plate is provided between a sputtering target and a substrate. The reactive sputtering deposition apparatus comprises a deposition chamber for creating an inner process atmosphere of the apparatus, a target including a metal material to be deposited, a substrate on which a reaction product of the metal material separated from the target with a reactive gas is deposited, and a partition plate dividing the deposition chamber into a reaction chamber at the side of the substrate and a sputtering chamber at the side of the target and provided between the target and the substrate, wherein an opening is formed through a central portion of the partition plate to allow the metal material separated from the target to reach the substrate.