Patents by Inventor Ho-Young Kang
Ho-Young Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6218204Abstract: Reduction in focusing error of an exposure process includes forming a conductive layer over a wafer whose topology is to be measured by a capacitance gauge. The conductive layer is thick enough such that differences in capacitance measured by the capacitance gauge tracking apparatus are not due to differences in underlying material and structure on the wafer. Thus, accurate measurement of the real topology of wafer by capacitance gauge tracking apparatus may be realized. As a result, the subsequent exposure processing is reliable.Type: GrantFiled: June 7, 1999Date of Patent: April 17, 2001Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Seog Hong, Jung-Hyeon Lee, Ho-Young Kang
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Patent number: 5978138Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+.first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.Type: GrantFiled: March 30, 1998Date of Patent: November 2, 1999Assignee: Samsung Electronics Co., Ltd.Inventors: Ho-young Kang, Cheol-hong Kim, Seong-oon Choi, Woo-sung Han, Chang-jin Sohn
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Patent number: 5853921Abstract: A phase shift mask is fabricated by forming a radiation blocking layer on a phase shift mask substrate and forming a photoresist layer on the radiation blocking layer. First portions of the photoresist layer are exposed at a first exposure dose. Second portions of the photoresist layer are exposed at a second exposure dose that is greater than the first exposure dose, such that the second portions of the photoresist layer are wider than the first portions of the photoresist layer. The radiation blocking layer is etched using the photoresist layer as an etch mask, to thereby produce first apertures in the radiation blocking layer beneath the first portions of the photoresist layer and second apertures in the radiation blocking layer which are wider than the first apertures, beneath the second portions of the photoresist layer. The phase shift mask substrate is then etched beneath the second apertures.Type: GrantFiled: July 28, 1997Date of Patent: December 29, 1998Assignee: Samsung Electronics Co., Ltd.Inventors: Seong-yong Moon, In-kyun Shin, Ho-young Kang
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Patent number: 5851706Abstract: A half tone phase shift mask includes a substrate which is transparent with respect to exposure radiation and a phase shifter pattern on the substrate. The phase shifter pattern comprises chromium oxide (Cr.sub.2 O.sub.3) and alumina (Al.sub.2 O.sub.3). Fine patterns can therefore be formed using phase shift masking of exposure radiation having a 193 nm wavelength, such as light from an ArF excimer laser.Type: GrantFiled: June 25, 1997Date of Patent: December 22, 1998Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-chul Lim, Sang-gyun Woo, Ho-young Kang, Kwang-soo No
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Patent number: 5808796Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.Type: GrantFiled: April 7, 1997Date of Patent: September 15, 1998Assignee: Samsung Electronics Co., Ltd.Inventors: Ho-young Kang, Cheol-hong Kim, Seong-oon Choi, Woo-sung Han, Chang-jin Sohn
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Patent number: 5679592Abstract: A process for forming a MOSFET, which includes the steps of: forming a gate insulating layer and a gate electrode on a semiconductor substrate, and forming lightly doped impurity regions on the left and right sides of the gate electrode and on the substrate; spreading photoresist, and forming a photoresist pattern for defining a side wall spacer formation portion on the gate electrode and on sides of the gate electrode; depositing an insulating layer on the surface of the substrate, and etching the insulating layer to remove an exposed surface portion and to form a side wall spacer on sides of the gate electrode; and removing the photoresist pattern, and forming a heavily doped source/drain region on the gate electrode and on sides of the side wall.Type: GrantFiled: December 18, 1995Date of Patent: October 21, 1997Assignee: LG Semicon Co., Ltd.Inventor: Ho-Young Kang
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Patent number: 5661601Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.Type: GrantFiled: June 6, 1995Date of Patent: August 26, 1997Assignee: Samsung Electronics Co., Ltd.Inventors: Ho-young Kang, Cheol-hong Kim, Seong-oon Choi, Woo-sung Han, Chang-jin Sohn
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Patent number: 5608576Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.Type: GrantFiled: June 6, 1995Date of Patent: March 4, 1997Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-sung Han, Chang-jin Sohn, Ho-young Kang, Cheol-hong Kim, Seong-oon Choi
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Patent number: 5504627Abstract: A projection exposure system includes a light transmitting member located between a light source and fly's eye lens to receive most of the incident light and to transmit the incident light to the periphery of the fly's eye lens. Light transmission of the system may be carried out by a light pipe and conic reflection mirror concentrically placed therein, or by an optical fiber flux having a light entrance pupil consisting of a bundle of individual units and a ramified light exit pupil. The system has high light-utilizing efficiency and reduced exposure time because most of the incident light is used.Type: GrantFiled: October 20, 1993Date of Patent: April 2, 1996Assignee: Samsung Electronics Co., Ltd.Inventors: Hak Kim, Ho-young Kang
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Patent number: 5446587Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.Type: GrantFiled: September 2, 1993Date of Patent: August 29, 1995Assignee: Samsung Electronics Co., Ltd.Inventors: Ho-young Kang, Cheol-hong Kim, Seong-oon Choi, Woo-sung Han, Chang-jin Sohn
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Patent number: 5387961Abstract: An illumination system for a projection exposing apparatus having an improved fly's eyes lens is disclosed in which an individual lens of a fly's eyes lens includes a pattern portion having a plurality of annuluses with the same center but different diameters, and an etch portion disposed alternately with the pattern portion. The etch portion is formed to have a phase difference of 180 degrees with respect to the pattern portion.Type: GrantFiled: November 22, 1993Date of Patent: February 7, 1995Assignee: Samsung Electronics Co., Ltd.Inventor: Ho-young Kang
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Patent number: 5386266Abstract: A projection exposure system includes a light source, a parallel-light forming lens and a fly's eyes lens which are sequentially disposed along a light traveling path. Between the parallel-light forming lens and fly's eyes lens is provided a light dispersing device which is composed of a first light dispersing lens with a concave lens or a second light dispersing lens with multiple small convex lenses. The light dispersing device diverges central light incident on the fly's eyes lens, to thereby increase peripheral light intensity. Accordingly, in tilted illumination, which uses peripheral light, light utilizing efficiency is raised.Type: GrantFiled: November 22, 1993Date of Patent: January 31, 1995Assignee: Samsung Electronics Co., Ltd.Inventor: Ho-young Kang