Abstract: Provided is a signal transmission line for a millimeter-wave band. The signal transmission line includes: a dielectric substrate; an input line formed on the dielectric substrate; a pair of serial transmission lines formed on the dielectric substrate, the serial transmission lines being branched at, separated from, and electromagnetically connected in series with one end of the input line; a pair of parallel transmission lines respectively formed on the dielectric substrate at both sides of the input line and the serial transmission lines, and having both ends separated from and electromagnetically connected in parallel with one end of each of the input line and the serial transmission lines; and a pair of wires electrically connected between the other ends of the parallel transmission lines and a connection pad of a monolithic microwave integrated circuit (MMIC). An electrical signal of about 57 to 63 GHz generated from a monolithic microwave integrated circuit (MMIC) can be efficiently transferred.

Abstract: Disclosed is a method of fabricating a semiconductor device including a multi-gate transistor. The method of fabricating a semiconductor device includes providing a semiconductor device having a number of active patterns which extend in a first direction, are separated by an isolation layer, and covered with a first insulating layer; forming a first groove by etching the isolation layer located between the active patterns adjacent to each other in the first direction; burying the first groove with a passivation layer; forming a second groove exposing at least a portion of both sides of the active patterns by etching the isolation layer located between the active patterns in a second direction intersecting the first direction; removing the passivation layer in the first groove; and forming a gate line filling at least a portion of the second groove and extending in the second direction.

Abstract: A driving apparatus includes a timing controller, a gate driver, and a pulse width controller. The timing controller generates a gate output enable signal having a width which is used for defining on-voltage widths of gate driving signals. The gate driver sequentially outputs the gate driving signals corresponds to a plurality of gate lines. The gate driver is controlled to prevent overlapping of the gate driving signals. The pulse width controller includes a signal generator and a converter. The signal generator receives two of the gate driving signals from two adjacent gate lines, compares the two gate driving signals, and generates a detection signal that detects an overlapping area of the two gate driving signals. The converter converts the detection signal to a pulse width control signal and feeds the pulse width control signal back to the timing controller. The timing controller receives the pulse width control signal and adjusts the width of the gate output enable signal.

Abstract: Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

Abstract: Example embodiments are directed to a method of planarizing a semiconductor device. A first CMP process may be performed on an insulating layer to remove a stepped structure of the insulating layer. A second CMP process may be performed to planarize the insulating layer with the stepped structure removed until a given pattern is exposed. A process temperature of the first CMP process may be higher than that of the second CMP process. Accordingly, an initial stepped structure may be more readily removed in a planarization process of a surface of the semiconductor device, which may reduce the CMP process time and may increase the degree of planarization.

Abstract: A method of fabricating a self-aligned contact pad (SAC) includes forming stacks of a conductive line and a capping layer on a semiconductor substrate, spacers covering sidewalls of the stacks, and an insulation layer filling gaps between the stacks and exposing the top of the capping layer, etching the capping layer to form damascene grooves, forming a plurality of first etching masks with a material different from that of the capping layer to fill the damascene grooves without covering the top of the insulation layer, and forming a second etching mask having an opening region that exposes some of the first etching masks and a portion of the insulation layer located between the first etching masks.

Abstract: An LCD driving scaler capable of reducing electromagnetic interference employs a spread spectrum phase locked loop (PLL) in which a multi-phase voltage controlled oscillator oscillates and outputs a scaler pixel clock signal and a plurality of oscillation signals of different phases. A spread spectrum processor counts clock periods of a reference pixel clock signal when a horizontal synchronization signal having an adjusted frame rate is activated, and sequentially outputs the plurality of oscillation signals in response to a decoding signal. The plurality of oscillation signals are output to a main divider, which generates the main divider signal by dividing the frequencies of the plurality of oscillation signals. A main divider signal is input into a phase frequency detector, which detects a phase difference between the predivider signal and the main divider signal and outputs the phase difference signal so that the frequency of the scaler pixel clock signal repeatedly varies.

Abstract: Provided is a millimeter wave oscillator for generating a high frequency signal required in wireless communication. The millimeter wave oscillator uses an overwritten fiber Bragg grating and a light detector such that two wavelengths in a certain phase relationship are produced to generate a signal of a millimeter wave band with a high frequency, whereby a light source is readily obtained without signal processing for phase lock.

Abstract: Provided is a millimeter wave oscillator for generating a high frequency signal required in wireless communication. The millimeter wave oscillator uses an overwritten fiber Bragg grating and a light detector such that two wavelengths in a certain phase relationship are produced to generate a signal of a millimeter wave band with a high frequency, whereby a light source is readily obtained without signal processing for phase lock.

Abstract: Disclosed herein is a backlight inverter for a U-shaped lamp which is capable of detecting an abnormal state of an inverter circuit. The backlight inverter comprises a driver for supplying first and second transformer drive voltages in response to an operation control signal and cutting off the supply of the transformer drive voltages in response to a shutdown control signal, first and second transformers for boosting the transformer drive voltage in a turn ratio between primary and secondary windings thereof and supplying the resulting drive voltage to the U-shaped lamp, first and second voltage detectors for detecting voltages across the secondary windings, respectively, first and second current detectors for detecting currents flowing through the secondary windings of the first and second transformers, respectively, an inverter abnormal state detector for detecting an abnormal state of the inverter, and a driver controller for controlling a normal operation or shutdown of the driver.

Abstract: An optical (disc) driving system including the DLL based multiphase clock generator circuit capable of generating 32 different phases from input clock having a frequency of 800 MHz or greater. The multiphase clock generator includes on a delay locked loop (DLL) having a frequency divider for outputting an N-divided clock to a first set of M voltage-controlled delay cells within a feedback loop, and further including an identical set of M voltage-controlled delay cells outside of the feedback loop for delaying the undivided clock and for outputting M multiphase clocks. An optical driver circuit of an optical driving system and a method for implementing a write-strategy for preventing “overlapping” of marks written on adjacent grooves on an optical disc. The circuit and method produce multiple write-strategy waveforms (channels) switching at a high resolution (e.g., T/32) in the Gigahertz frequency range.

Abstract: A molten metal holding apparatus for the continuous hot dip coating of a metal strip includes a vessel that is substantially rectangular in cross section having long sides and short sides and has formed a slot-shaped opening in a bottom surface, the vessel containing molten metal; subsidiary vessels formed following an outer circumference of an upper end of the vessal and for temporarily storing molten metal that overflows from the upper end of the vessel; chambers formed outwardly following long sides of a lower end of the vessel and that communicate with the vessel via slit-shaped branch openings formed at a predetermined slant toward the vessel; a plurality of subsidiary tubes communicating with the subsidiary vessels; and alternating current electromagnets including a core mounted adjacent to outside side surfaces of the vessel and between the subsidiary vessels and the chambers and a coil wound around the core and to which an alternating current is supplied.

Abstract: The present invention relates to a millimeter wave frequency band optical oscillator used for an oscillating frequency signal source of millimeter waves transmitted from a repeater to a wireless subscriber in a millimeter wave wireless subscriber communication system for a next-generation (i.e., 5th generation or less) very high speed wireless internet service, wherein a loop mirror and a pair of optical fiber grating mirrors are used. A wavelength fixed type and a wavelength tunable type optical fiber grating mirrors are connected in a serial manner to constitute a dual laser mode resonator capable of simultaneously oscillating two laser modes, which are appropriate to each wavelength. Therefore, it is possible to obtain a laser light source capable of an extremely high frequency (60 GHz or more) modulation by using beat phenomena between two laser modes.

Abstract: Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

Abstract: There is provided a millimeter wave band frequency optical oscillator predicted to be used as a millimeter wave oscillating frequency signal source in a base station of a millimeter wave wireless transmission system. The optical oscillator has a double resonator structure in which a pair of wavelength tunable fiber grating mirrors are inserted into a unilateral fiber-ring laser resonator in order to internally and additionally form a linear laser resonator. The double resonator structure composed of the two stable laser resonators can oscillate laser of two modes. Due to a beat phenomenon occurring between the two modes, received laser is modulated to an ultra-speed frequency of 60 GHz or greater. A variation in the gain within a resonator is induced by a polarization controller using the dependency of laser modes upon polarization. A modulation frequency is consecutively changed from 60 GHz to 80 GHz by controlling the wavelength of light reflected by the fiber grating mirrors.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a plate that holds a substrate, a pad assembly unit comprising a pad support device, a positioning device, and a rotation device operatively connected to the pad assembly unit. The pad support device comprises a plurality of support plates to which pad pieces of a polishing pad can be attached. The positioning device can move at least one of the plurality of support plates in a direction along a surface of the semiconductor substrate to be polished. Further, the CMP apparatus can control the polishing amount along any portion of a surface of a wafer to be polished.

Abstract: A method for isolating SAC pads of a semiconductor device, including determining a chemical mechanical polishing process time necessary to isolate the SAC pads a desired amount by referring to a relationship equation between the extent of isolation of the self-aligned contact pads and the chemical-mechanical polishing process time. The chemical mechanical polishing process is performed for the determined process time on the semiconductor device to isolate the self-aligned contact pads the desired amount. The relationship equation is determined using a test semiconductor device.

Abstract: A micro-electro-mechanical generator has a liquid chamber, a heating block, an elongated elastic piezoelectric plate and a pair of electrodes. The liquid chamber is defined by bottom blocks which include the heating block and side walls, and can maintain a liquid. The heating block generates bubbles within the liquid chamber. The elongated elastic piezoelectric plate has a piezoelectric material layer, and is positioned in the liquid chamber adjacent to an upper portion of the heating block. The elongated elastic piezoelectric plate is deformable by contact with the bubbles, wherein a first end of the elongated elastic piezoelectric plate is a free end and a second end of the elongated elastic piezoelectric plate is a fixed end. The pair of electrodes are electrically connected to the piezoelectric material layer.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a plate that holds a substrate, a pad assembly unit comprising a pad support device, a positioning device, and a rotation device operatively connected to the pad assembly unit. The pad support device comprises a plurality of support plates to which pad pieces of a polishing pad can be attached. The positioning device can move at least one of the plurality of support plates in a direction along a surface of the semiconductor substrate to be polished. Further, the CMP apparatus can control the polishing amount along any portion of a surface of a wafer to be polished.

Abstract: A method for isolating SAC pads of a semiconductor device, including determining a chemical mechanical polishing process time necessary to isolate the SAC pads a desired amount by referring to a relationship equation between the extent of isolation of the self-aligned contact pads and the chemical-mechanical polishing process time. The chemical mechanical polishing process is performed for the determined process time on the semiconductor device to isolate the self-aligned contact pads the desired amount. The relationship equation is determined using a test semiconductor device.