Abstract: An apparatus and method for forming a three-dimensional (3D) pattern using electrojetting, the apparatus including: a syringe tip having one end from which a polymer jet is discharged; a substrate that is disposed in a direction in which the polymer jet is discharged, and that forms an electric field between the substrate and the syringe tip; and a movement unit that moves the syringe tip or the substrate, wherein the polymer jet discharged from the syringe tip is moved relative to an upper side of the substrate and is stacked on the substrate.

Abstract: A method of manufacturing a semiconductor devices includes providing a semiconductor substrate that includes a channel region. The method includes forming a gate electrode material film including a stepped portion on the channel region. A sacrificial material film that has an etch selectivity that is the same as an etch selectivity of the gate electrode material film is formed. The sacrificial material film is planarized until a top surface of the gate electrode material film is exposed. The stepped portion is reduced by removing an exposed portion of the gate electrode material film.

Abstract: A display device capable of accurately sensing object presence at lower power consumption is presented, as well as a method of driving the display device. The display device includes a sensing circuit that detects the presence of an object by sensing radiation, and a radiation source array that provides radiation to the sensing circuit. First signals are provided to the scan lines of the sensing circuit, sequentially activating the sensors during a frame period. Second signals are provided to a radiation source array to selectively activate different portions of the radiation source array. The first and second signals are synchronized in their timing such that the portion of the radiation source array that supplies radiation to the activated sensors are turned on.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: The present invention relates to a method for selectively detecting a multimer type multimer-forming polypeptide in a biological sample, the method comprising: (a) bringing the biological sample into contact with an agglutination reaction inducing agent to induce the formation of an aggregate in an analysis target, the agglutination reaction inducing agent being a particle in which a specific antibody is surface-bonded with the multimer-forming polypeptide; (b) obtaining an image with respect to the aggregate of step (a); and (c) analyzing a size or a shape of the aggregate by using the image. Step (a), step (b), or steps (a) and (b) are performed on a microchip having a microchannel. The image analysis is performed using a coefficient according to the size of the aggregate in a predetermined volume provided by the microchannel.

Abstract: A memory control apparatus that minimizes memory bank collisions by rescheduling memory requests. The memory control apparatus includes a scheduler configured to, in response to at least two memory requests existing in a current cycle, schedule a plurality of elements included in the at least two memory requests based on information about memory banks determined for the plurality of elements; and a request generator configured to, in response to the scheduling of the plurality of elements by the scheduler, generate a scheduled memory request for the current cycle using at least one element in the at least two memory requests in order to prevent a memory bank collision.

Abstract: A method for adjusting bandwidth, a bandwidth scaler and an apparatus are provided. The method for adjusting bandwidth involves determining a dynamic context of a processor, and based on the determined dynamic context, scaling bandwidth between the processor and a memory.

Abstract: The present invention provides a method for synthesizing a Bi2TeySe3-y thermoelectric nanocompound (0<y<3), comprising the following steps: preparing a Bi—Te—Se solution by adding Bi, Te, and Se precursors to a solvent (step 1); preparing a hydrate by mixing the Bi—Te—Se solution prepared in step 1) with a base aqueous solution (step 2); preparing a Bi2TeySe3-y reactant by liquid phase reduction at room temperature after adding a reducing agent to the hydrate prepared in step 2) (step 3); aging the Bi2TeySe3-y reactant prepared in step 3) (step 4); and preparing Bi2TeySe3-y nanoparticles by filtering and drying the Bi2TeySe3-y reactant aged in step 4) (step 5). The Bi2TeySe3-y thermoelectric nanocompound synthesized by the method of the present invention via liquid phase reduction is composed of regular nanoparticles since the method does not need any additional heat-treatment to eliminate chemical additives and prevents particles from being over-grown.

Abstract: The present invention provides a method for synthesizing a BixSb2-xTe3 thermoelectric nanocompound (0<x<2), comprising the following steps: preparing a Bi—Sb—Te solution by adding Bi, Sb, and Te precursors to a solvent (step 1); preparing a Bi—Sb—Te hydrate by mixing the Bi—Sb—Te solution prepared in step 1) with a base aqueous solution (step 2); preparing a BixSb2-xTe3 reactant by liquid phase reduction at room temperature after adding a reducing agent to the Bi—Sb—Te hydrate prepared in step 2) (step 3); aging the BixSb2-xTe3 reactant prepared in step 3) (step 4); and preparing BixSb2-xTe3 nanoparticles by filtering and drying the BixSb2-xTe3 reactant aged in step 4) (step 5). The BixSb2-xTe3 thermoelectric nanocompound synthesized by the method of the present invention via liquid phase reduction is composed of regular nanoparticles since the method does not need any additional heat-treatment to eliminate chemical additives and prevents particles from being over-grown.

Abstract: Methods are provided for forming gates in gate-last processes. The methods may include performing chemical mechanical polishing (CMP) on an interlayer dielectric (ILD) that is on a plurality of dummy gates, each of the plurality of dummy gates including a gate mask in an upper portion thereof, and the CMP exposing the gate mask. The methods may also include removing the gate mask by etching the gate mask. The methods may further include performing CMP on the ILD.

Abstract: A simulation apparatus and method for a multicore system are provided. The simulation apparatus may prevent the occurrence of a data collision during the communication between modules and may reduce the overhead generated during simulation. The simulation apparatus may select a plurality of modules to be synchronized in terms of function execution timing based on timing information and may configure a multicore system architecture model using the selected modules. The simulation apparatus may acquire function execution timing information of the modules, control the execution of functions by the modules based on the acquired function execution timing information, and output the results of the control of the execution of functions by the modules.

Abstract: A routing apparatus and a network apparatus that are capable of improving general system performance by compressing/decompressing data and transmitting the result of the compression/decompression, are provided. The routing apparatus may compress and/or decompress input data, and may transmit the compressed and/or decompressed input data.

Abstract: A method for fabricating a semiconductor device includes forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin, removing a portion of the upper pre-isolation layer by performing a first polishing process, and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing the remaining portion of the upper pre-isolation layer.

Abstract: An impulsively driven liquid crystal display includes a display panel displaying an image in response to a gate signal and a data signal, a panel driving circuit providing the gate signal and the data signal to the display panel using an image signal and a control signal, a backlight unit including a plurality of light sources that blink at once to provide a light to the display panel, and a backlight control circuit. The backlight control circuit automatically detects an existence of text information from a received image signal, and if the text is detected to be present, adjusts the blinking timing of the light sources to correspond with the area on the display panel where the text will be displayed, the adjustment being a function of a liquid crystal response delay time of liquid crystals used in the display panel.

Abstract: The inventive concept relates to a system supplying a constant current direct current power to serial loads connected in series with one another. The inventive concept is constituted by a constant current source power supply unit outputting a predetermined direct current, a load connection unit having the same rated current characteristic as the constant current source, a load connection unit having a rated current characteristic smaller than the constant current source, a load connection unit having a rated current characteristic greater than the constant current source, a load connection unit having a rated current characteristic greater or smaller than the constant current source and a circuit controlling or protecting them.

Abstract: A multi-channel semiconductor memory device and a method of refreshing the same. In the multi-channel semiconductor memory device and method, a common refresh controller is prepared to detect refresh operation states of a plurality of sub-memory circuits (e.g. ICs) and to adjust refresh operation times of multiple sub-memory ICs so that two or more sub-memory ICs do not simultaneously perform a refresh operation, thereby reducing the peak current.

Abstract: A display device includes a plurality of pixels, each pixel including an organic light emitting diode (OLED) and a driving transistor, a sustain power supply unit applying a first sustain voltage to a plurality of data lines connected to the plurality of pixels, and a data driver applying one of a data signal and a second sustain voltage to the plurality of data lines. For each pixel, the sustain power supply unit applies the first sustain voltage as a first level voltage to reset a gate voltage of the driving transistor and applies the first sustain voltage as a second level voltage to increase the gate voltage of the driving transistor. When an anode voltage of the OLED in each pixel is discharged to be reset, the anode voltage of the OLED is controlled according to a voltage difference between the first level voltage and the second level voltage.

Abstract: In a method for fabricating a semiconductor device, a substrate may be provided that includes: a base, an active fin that projects from an upper surface of the base and is integrally formed with the base, and a buffer oxide film pattern formed on the active fin in contact with the active fin. A first dummy gate film may be formed on the substrate to cover the buffer oxide film pattern and the first dummy gate film may be smoothed to expose the buffer oxide film pattern. A second dummy gate film may be formed on the exposed buffer oxide film pattern and the first dummy gate film.

Abstract: A transmitter of a transition minimized differential signaling (TMDS) system includes a current source, a pair of switches configured to be connected to the current source and switch a current of the current source, and a monitoring unit configured to monitor a potential of a connection node between the current source and the pair of switches. The pair of switches is connected to a receiver of the TMDS system through a first line and a second line, respectively. The monitoring unit monitors the potential of the connection node based on a power supply voltage applied to the receiver and current switching of the pair of switches.

Abstract: A method of displaying a medical image, the method including: displaying a first image reduced from the medical image; determining a first point that is a location in the first image; determining a second point that is a location corresponding to the first point in a second image, wherein the second image is reduced from the medical image having a size greater than that of the first image; overlaying an image corresponding to a second region of a previously determined size including the second point over the first image; and receiving an input to move the second point and newly determining the second point based on the input.