Abstract: A compact package and a method of hermetically packaging a high power semiconductor device includes a metal lid bonded to a ceramic base with the semiconductor device therebetween. The lid is bonded to one surface of the device, and electrical contacts on the opposing surface of he device are bonded to foils that seal openings in the base for contact pins.

Abstract: A package for semiconductor devices with plural subelements and method of packaging. Semiconductor power devices may include plural subelements to increase device manufacturing yield. Each subelement is separately contacted through the lid of the package by attaching a foil to a subelement contact and depending a tab from the foil that extends through the lid. Tabs for operative subelements can be connected external to the package, and tabs for inoperative subelements may be left unconnected or covered so that electrical connections cannot be made therewith.

Abstract: A compact package and a method of hermetically packaging a high power semiconductor device includes a metal lid bonded to a ceramic base with the semiconductor device therebetween. The lid is bonded to one surface of the device, and electrical contacts on the opposing surface of the device are bonded to foils that seal openings in the base for contact pins.

Abstract: Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.

Abstract: A hermetic semiconductor package having a ceramic lid with the device leads extending vertically through the lid is disclosed. The leads are mechanically retained within the apertures in the lid and direct bonded to the lid to provide a hermetic seal and a substantial lead density.

Abstract: Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.

Abstract: Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.

Abstract: A hermetic semiconductor package includes a ceramic lid with the device leads extending vertically through the lid. The leads are mechanically retained within the apertures in the lid and direct bonded to the lid to provide a hermetic seal and a substantial lead density.

Abstract: A hermetically sealed package for a semiconductor device includes a lid through which the leads of the device extend vertically away from the chip through an aperture in the lid which is hermetically sealed by the external terminal or electrode. The package is compact, lightweight and free of magnetic materials.

Abstract: A method is provided for making a hermetically sealed package for a power semiconductor wafer having substantially entirely silicon materials selected to have coefficients of thermal expansion closely matching that of the power semiconductor wafer. A semiconductor wafer such as a power diode includes a layer of silicon material having first and second device regions on respective sides. An electrically conductive cap and base of silicon are disposed in electrical contact with the first and second regions of the semiconductor device, respectively. An electrically insulative sidewall of silicon glass material surrounds the semiconductor wafer, is spaced from an edge thereof, and is bonded to the cap and base for hermetically sealing the package.

Abstract: A hermetic, high current package for a semiconductor device includes wide flat leads which are bonded to the contact pads of the device and formed to extend through apertures in an insulating lid. The lid is sealed to a base and the apertures around the leads are sealed with solder to provide the hermetic package. This package limits lateral current flow in the contact pads of the semiconductor device to relatively low levels which ensure the integrity of the contact pads.

Abstract: A hermetically sealed package for a semiconductor device includes a lid through which the leads of the device extend vertically away from the chip through an aperture in the lid which is hermetically sealed by the external terminal or electrode. The package is compact, lightweight and free of magnetic materials.

Abstract: A composite structure comprising a symmetric bimetallic laminate bonded to a separate substrate is provided by eutectic bonding the bimetallic laminate to the substrate. A variety of beneficial structures can be provided.

Abstract: A method is provided for making a hermetically sealed package for a power semiconductor wafer with silicon materials selected to have coefficients of thermal expansion closely matching that of the power semiconductor water. A semiconductor wafer such as a power diode has a layer of silicon material having first and second device regions on respective sides thereof. An electrically conductive cap and base of silicon are disposed in electrical contact with the first and second regions of the semiconductor device, respectively. An electrically insulative sidewall of silicon glass material surrounds the semiconductor wafer, is spaced from the edge, and is bonded to the cap and base for hermetically sealing the package. The glass sidewall is directly bonded to the base by bringing the base and sidewall into intimate contact under a slight pressure and heating to a temperature at which the glass wets the silicon base, holding this temperature for a time and then cooling the composite to complete the bond.

Abstract: A hermetic, high current package for a semiconductor device includes wide flat leads which are bonded to the contact pads of the device and formed to extend through apertures in an insulating lid. The lid is sealed to a base and the apertures around the leads are sealed with solder to provide the hermetic package. This package limits lateral current flow in the contact pads of the semiconductor device to relatively low levels which ensure the integrity of the contact pads.

Abstract: Wafers which are direct bonded to each other in accordance with prior art processes suffer from voids at their bonded interface. Annealing such composite structures at high temperature and high pressure (for silicon wafers preferably about 1,100.degree. C. and 15,000 psi) eliminates all voids which are not a result of the presence of a particle on one of the wafers at the time of mating.

Abstract: An apparatus for monitoring the curing of a fiber reinforced composite plastic which is cured at temperatures of the order of 350.degree. C. and an ultrasonic transducer assembly useful in the apparatus. The transducer assembly comprises a lithium niobate piezoelectric element having anisotropic coefficients of thermal expansion which is mounted on a metal base of the transducer assembly by means of a layer of structured copper. The structured copper is thermo-compression diffusion bonded to the lithium niobate element and to the metal base, and is compliant in a transverse direction to compensate for differential thermal expansions while affording good electrical and thermal conductivity and good acoustic coupling between the lithium niobate element and metal base.

Abstract: A package for interconnecting a plurality of integrated circuit chips into a functional unit comprising a multilayer substrate having ground and power conducting layers and a frame for holding the chips with their terminal pads on the side of the frame opposite the substrate. Power and ground terminal pads on the chips are coupled to the appropriate potentials via registering conductive feedthroughs passing through the frame and into the substrate into contact with appropriate power or conductive layers in the substrate. Signal pads on the chips are interconnected by means of a conductive layer which is located over the chips on the side of the frame opposite the substrate.

Abstract: A method of providing a unitary body comprised of two initially separate layers having similar coefficients of thermal expansion involves forming a mat of glass fibers in a configuration suitable for bonding the two layers together, placing the glass mat between them and heating the resulting stack to a temperature at which the individual fibers of the glass mat deform to form a continuous layer of glass which adheres to both layers, after which the stack is cooled to result in the unitary body.

Abstract: An apparatus for monitoring the curing of a fiber reinforced composite plastic which is cured at temperatures of the order of 350.degree. C. and an ultrasonic transducer assembly useful in the apparatus. The transducer assembly comprises a lithium niobate piezoelectric element having anisotropic coefficients of thermal expansion which is mounted on a metal base of the transducer assembly by means of a layer of structured copper. The structured copper is thermo-compression diffusion bonded to the lithium niobate element and to the metal base, and is compliant in a transverse direction to compensate for differential thermal expansions while affording good electrical and thermal conductivity and good acoustic coupling between the lithium niobate element and metal base.