Patents by Inventor Hon Wong
Hon Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240061923Abstract: Embodiments of the present disclosure provide systems and methods for performing authentication of user. The method includes accessing a user profile including a plurality of data fields corresponding to a user from a database. The method further includes determining at least one data field from the plurality of data fields. The method further includes identifying a plurality of relevant data points associated with the at least one data field from one or more data repositories. The plurality of relevant data points identified is based on a relevance function. The method further includes selecting a plurality of unrelated data points from the one or more data repositories. The plurality of unrelated data points is unassociated with the at least one data field. Method further includes generating one or more user authentication requests. The one or more user authentication requests are generated based on the plurality of relevant and unrelated data points.Type: ApplicationFiled: August 19, 2022Publication date: February 22, 2024Inventors: Matthew SALISBURY, Travis ROSCHER, Hon WONG, Joe HSY
-
Patent number: 11904603Abstract: An example printer including: a platen roller; a bushing connected to the platen roller, the bushing having a wing extending radially from the bushing; and a lower frame including: a channel to receive the platen roller in an operational position in which the platen roller is configured to feed media for a print head of the printer; an end piece defining an end of the channel, the end piece having an opening to receive the bushing when the platen roller is in the operational position; and a tab on the end piece, the tab positioned to interface with the wing of the bushing to secure the bushing in the opening such that the platen roller is maintained in the operational position within the channel.Type: GrantFiled: January 27, 2022Date of Patent: February 20, 2024Assignee: Zebra Technologies CorporationInventors: Randal Mun Hon Wong, Shu-Hsun Chiang, Kuan-Ying Lu, Chia-Wen Chang, Hsinghan Tsai
-
Publication number: 20230234378Abstract: An example printer including: a platen roller; a bushing connected to the platen roller, the bushing having a wing extending radially from the bushing; and a lower frame including: a channel to receive the platen roller in an operational position in which the platen roller is configured to feed media for a print head of the printer; an end piece defining an end of the channel, the end piece having an opening to receive the bushing when the platen roller is in the operational position; and a tab on the end piece, the tab positioned to interface with the wing of the bushing to secure the bushing in the opening such that the platen roller is maintained in the operational position within the channel.Type: ApplicationFiled: January 27, 2022Publication date: July 27, 2023Inventors: Randal Mun Hon Wong, Shu-Husn Chiang, Kuan-Ying Lu, Chia-Wen Chang, Hsinghan Tsai
-
Patent number: 11152300Abstract: An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.Type: GrantFiled: September 16, 2011Date of Patent: October 19, 2021Assignee: International Business Machines CorporationInventors: Baozhen Li, Yan Zun Li, Keith Kwong Hon Wong, Chih-Chao Yang
-
Publication number: 20200386843Abstract: This document describes a system and method for determining a location of a mobile device within an enclosed space using audio localization techniques. In particular, the system and method utilizes audio localization techniques to identify the location of a mobile device within a multi-storey multi-room structure or an enclosure with multiple rooms.Type: ApplicationFiled: June 17, 2018Publication date: December 10, 2020Applicant: Certis Cisco Security Pte LtdInventors: Poh Beng TAN, Keen Hon WONG, Meng Kwang TAN
-
Patent number: 10699949Abstract: A cobalt contact includes a dual silicide barrier layer. The barrier layer, which may be formed in situ, includes silicides of titanium and cobalt, and provides an effective adhesion layer between the cobalt contact and a conductive device region such as the source/drain junction of a semiconductor device, eliminating void formation during a metal anneal.Type: GrantFiled: April 9, 2019Date of Patent: June 30, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Keith Kwong Hon Wong, Wonwoo Kim, Praneet Adusumilli
-
Patent number: 10490501Abstract: Aspects of the present disclosure include a method for forming a contact on a semiconductor device, the semiconductor device including a conductive region disposed over a substrate, the method comprising: depositing a dielectric material on the substrate; forming an opening in the dielectric material to expose the conductive region; forming a barrier layer on a lower surface and sidewalls of the opening in the dielectric material, the barrier layer terminating below an upper surface of the dielectric material and surrounding a lower portion of the opening; depositing cobalt in the lower portion of the opening, the cobalt terminating at an upper surface of the barrier layer; depositing tungsten to fill the opening to at least the upper surface of the dielectric material; and planarizing the upper surface of the dielectric material with the tungsten in the opening.Type: GrantFiled: February 9, 2018Date of Patent: November 26, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Jim Shih-Chun Liang, Keith Kwong Hon Wong
-
Publication number: 20190237365Abstract: A cobalt contact includes a dual silicide barrier layer. The barrier layer, which may be formed in situ, includes silicides of titanium and cobalt, and provides an effective adhesion layer between the cobalt contact and a conductive device region such as the source/drain junction of a semiconductor device, eliminating void formation during a metal anneal.Type: ApplicationFiled: April 9, 2019Publication date: August 1, 2019Inventors: Keith Kwong Hon Wong, Wonwoo Kim, Praneet Adusumilli
-
Patent number: 10347529Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to interconnect structures and methods of manufacture. The structure includes a metallization feature comprising a fill material and formed within a dielectric layer; at least one cap covering the fill material of the metallization feature, the at least one cap is comprised of a material different than the fill material of the metallization feature; and an interconnect structure in electrical contact with the metallization feature.Type: GrantFiled: October 4, 2017Date of Patent: July 9, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Jim Shih-Chun Liang, Keith Kwong Hon Wong
-
Patent number: 10319633Abstract: A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.Type: GrantFiled: May 25, 2016Date of Patent: June 11, 2019Assignee: International Business Machines CorporationInventors: Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar, Keith Kwong Hon Wong
-
Patent number: 10304735Abstract: A cobalt contact includes a dual silicide barrier layer. The barrier layer, which may be formed in situ, includes silicides of titanium and cobalt, and provides an effective adhesion layer between the cobalt contact and a conductive device region such as the source/drain junction of a semiconductor device, eliminating void formation during a metal anneal.Type: GrantFiled: June 22, 2017Date of Patent: May 28, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Keith Kwong Hon Wong, Wonwoo Kim, Praneet Adusumilli
-
Publication number: 20190103310Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to interconnect structures and methods of manufacture. The structure includes a metallization feature comprising a fill material and formed within a dielectric layer; at least one cap covering the fill material of the metallization feature, the at least one cap is comprised of a material different than the fill material of the metallization feature; and an interconnect structure in electrical contact with the metallization feature.Type: ApplicationFiled: October 4, 2017Publication date: April 4, 2019Inventors: Jim Shih-Chun LIANG, Keith Kwong Hon Wong
-
Publication number: 20190096679Abstract: Structures for a field-effect transistor and methods for forming a structure for a field-effect transistor. A gate cavity is formed in a dielectric layer that includes a bottom surface and a plurality sidewalls that extend to the bottom surface. A gate dielectric layer is formed at the sidewalls and the bottom surface of the gate cavity. A work function metal layer is deposited on the gate dielectric layer at the sidewalls and the bottom surface of the gate cavity. A fill metal layer is deposited inside the gate cavity after the work function metal layer is deposited. The fill metal layer is formed in direct contact with the work function metal layer.Type: ApplicationFiled: September 22, 2017Publication date: March 28, 2019Inventors: Balaji Kannan, Bala Haran, Vimal K. Kamineni, Sungkee Han, Neal Makela, Suraj K. Patil, Pei Liu, Chih-Chiang Chang, Katsunori Onishi, Keith Kwong Hon Wong, Ruilong Xie, Chanro Park, Min Gyu Sung
-
Patent number: 10192822Abstract: A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.Type: GrantFiled: February 16, 2015Date of Patent: January 29, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Domingo A. Ferrer, Kriteshwar K. Kohli, Siddarth A. Krishnan, Joseph F. Shepard, Jr., Keith Kwong Hon Wong
-
Patent number: 10170359Abstract: A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.Type: GrantFiled: October 30, 2017Date of Patent: January 1, 2019Assignee: International Business Machines CorporationInventors: Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar, Keith Kwong Hon Wong
-
Publication number: 20180374749Abstract: A cobalt contact includes a dual silicide barrier layer. The barrier layer, which may be formed in situ, includes silicides of titanium and cobalt, and provides an effective adhesion layer between the cobalt contact and a conductive device region such as the source/drain junction of a semiconductor device, eliminating void formation during a metal anneal.Type: ApplicationFiled: June 22, 2017Publication date: December 27, 2018Applicant: GLOBALFOUNDRIES INC.Inventors: Keith Kwong Hon WONG, Wonwoo KIM, Praneet ADUSUMILLI
-
Publication number: 20180374746Abstract: A method of forming a titanium nitride (TiN) diffusion barrier includes exposing a deposition surface to a first pulse of a titanium-containing precursor and to a first pulse of a nitrogen-rich plasma to form a first TiN layer with a first nitrogen concentration making a lower portion of the TiN diffusion barrier, the first nitrogen concentration of the first TiN layer is increased by the first pulse of the nitrogen-rich plasma reducing a reactivity of the lower portion of the TiN diffusion barrier to prevent fluorine diffusion. The first TiN layer is exposed to second pulses of the titanium-containing precursor and the nitrogen-rich plasma to form a second TiN layer with a second nitrogen concentration above the first TiN layer making an upper portion of the TiN diffusion barrier, the first pulse of the nitrogen-rich plasma has a substantially longer duration than the second pulse of the nitrogen-rich plasma.Type: ApplicationFiled: August 31, 2018Publication date: December 27, 2018Inventors: Brett H. Engel, Domingo A. Ferrer, Arun Vijayakumar, Keith Kwong Hon Wong
-
Patent number: 10096609Abstract: A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by changing the crystalline structure to a tetragonal tungsten silicon layer.Type: GrantFiled: February 16, 2015Date of Patent: October 9, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Nicolas L. Breil, Domingo A. Ferrer, Keith Kwong Hon Wong
-
Patent number: D890002Type: GrantFiled: December 19, 2018Date of Patent: July 14, 2020Assignee: TEXECOM LIMITEDInventors: Shelby Cound, Jan Hon Wong, Carl Stone
-
Patent number: D953901Type: GrantFiled: July 2, 2020Date of Patent: June 7, 2022Assignee: TEXECOM LIMITEDInventors: Shelby Cound, Jan Hon Wong, Carl Stone