Patents by Inventor Honam Kwon

Honam Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220352219
    Abstract: According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.
    Type: Application
    Filed: February 24, 2022
    Publication date: November 3, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Mariko SHIMIZU, Ikuo FUJIWARA, Keita SASAKI, Kazuaki OKAMOTO, Honam KWON, Kazuhiro SUZUKI
  • Patent number: 11454581
    Abstract: The molecule detecting apparatus of an embodiment includes a light source 31, a fluorescent layer 42 emitting different fluorescence depending on the kind of a target molecule 60 captured when being irradiated with light from the light source 31, a photodetector 32 configured to detect fluorescence, and the photodetector 32 is an array of avalanche photodiodes operating in Geiger mode.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: September 27, 2022
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Honam Kwon, Ikuo Fujiwara, Kazuhiro Suzuki, Keita Sasaki, Yuki Nobusa, Yasushi Shinjo
  • Patent number: 11398544
    Abstract: According to one embodiment, a light detector includes an element and a quenching resistance. The element includes a photodiode. The quenching resistance is electrically connected to the element. The quenching resistance includes a semiconductor member and a plurality of first metal members. The plurality of first metal members is electrically connected to the semiconductor member and separated from each other.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: July 26, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Honam Kwon, Ikuo Fujiwara, Keita Sasaki, Kazuhiro Suzuki
  • Publication number: 20220223631
    Abstract: According to one embodiment, a light detector includes a plurality of elements. Each of the elements includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is located on the first semiconductor region and has a higher first-conductivity-type impurity concentration than the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The elements are arranged at a first period in a second direction crossing a first direction. The first direction is from the first semiconductor region toward the second semiconductor region. A quenching part is electrically connected with the third semiconductor region. Multiple lenses are located respectively on the elements. One of the lenses is positioned on one of the elements. A refracting layer is located between the elements and the lenses. The refracting layer has a first thickness.
    Type: Application
    Filed: August 20, 2021
    Publication date: July 14, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuaki OKAMOTO, Honam KWON, Mariko SHIMIZU, Kazuhiro SUZUKI, Keita SASAKI, Ikuo FUJIWARA
  • Publication number: 20220223749
    Abstract: According to one embodiment, a light detector includes a junction region, a first insulating portion, and a quenching part. The junction region includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The second semiconductor region is provided on the first semiconductor region and forms a p-n junction surface with the first semiconductor region. The first insulating portion has an inclined surface inclined with respect to a first direction perpendicular to the p-n junction surface and includes void. The inclined surface is provided at a same height as at least a portion of the junction region and crosses the second direction from the junction region toward the first insulating portion.
    Type: Application
    Filed: August 31, 2021
    Publication date: July 14, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Honam KWON, Mariko SHIMIZU, Kazuaki OKAMOTO, Kazuhiro SUZUKI
  • Patent number: 11346953
    Abstract: In one embodiment, a photo detector includes a plurality of photo detection elements, a plurality of trenches each provided among a plurality of the photo detection elements, and a wiring provided between the two photo detection elements out of the plurality of photo detection elements to electrically connect to the two photo detection elements. The trenches surround the 2·m (m is a positive integer) photo detection elements including the two photo detection elements. And the two photo detection elements are lined in a direction orthogonal to an extending direction of the metal layer for electrical connection.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: May 31, 2022
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Honam Kwon, Kazuhiro Suzuki, Ikuo Fujiwara, Keita Sasaki, Yuki Nobusa
  • Patent number: 11329184
    Abstract: A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: May 10, 2022
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaki Atsuta, Kazuhiro Suzuki, Ikuo Fujiwara, Honam Kwon, Keita Sasaki, Yuki Nobusa
  • Patent number: 11313956
    Abstract: A photodetector includes a plurality of first light detection elements having a first driving voltage range, the first light detection elements including first semiconductor layers having a first conductivity type and second semiconductor layers having a second conductivity type different from the first conductivity type; and a second light detection element having a second driving voltage range different from the first driving voltage range, the second light detection element including a third semiconductor layer having the first conductivity type and a fourth semiconductor layer having the second conductivity type.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: April 26, 2022
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventors: Honam Kwon, Ikuo Fujiwara, Kazuhiro Suzuki, Keita Sasaki, Yuki Nobusa
  • Publication number: 20220059710
    Abstract: According to one embodiment, a light detector includes a first semiconductor layer of a first conductivity type, a first region, a quenching part, a second region, and a first layer. The first region is located on a portion of the first semiconductor layer, includes a first-conductivity-type first semiconductor region that has a higher first-conductivity-type impurity concentration than the first semiconductor layer, and includes a second semiconductor region of a second conductivity type provided on the first semiconductor region. The quenching part is electrically connected to the second semiconductor region. The second region is located on another portion of the first semiconductor layer, includes a second-conductivity-type third semiconductor region, and includes a first-conductivity-type fourth semiconductor region provided on a portion of the third semiconductor region. The first layer is located on the second region and includes a resin that absorbs or reflects light.
    Type: Application
    Filed: February 24, 2021
    Publication date: February 24, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Honam KWON, Kazuhiro Suzuki, Keita Sasaki, Mariko Shimizu
  • Patent number: 11255954
    Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the first region and the second region, a fourth region of the second conductivity type provided so as to surround a periphery of the second region, in a direction crossing with a direction from the first region toward the second region, and a fifth region of the first conductivity type provided between the first region and the fourth region.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: February 22, 2022
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ikuo Fujiwara, Yuki Nobusa, Honam Kwon, Keita Sasaki, Kazuhiro Suzuki
  • Patent number: 11199696
    Abstract: According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: December 14, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Honam Kwon, Koichi Ishii, Ikuo Fujiwara, Kazuhiro Suzuki
  • Publication number: 20210293967
    Abstract: According to one embodiment, a light detector includes an element, and a structure body. The element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The structure body is provided around the element. The structure body includes first and second insulating portions and a metal-including portion. The metal-including portion is provided above the first insulating portion. A position in the first direction of a portion of the metal-including portion is same as a position in the first direction of the third semiconductor region. The second insulating portion is positioned between the metal-including portion and the element in the first plane. A thickness of the first insulating portion is greater than a thickness of the second insulating portion in the first plane.
    Type: Application
    Filed: September 9, 2020
    Publication date: September 23, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ikuo FUJIWARA, Honam KWON, Keita SASAKI, Kazuhiro SUZUKI, Masaki ATSUTA, Mariko SHIMIZU, Kazuaki OKAMOTO
  • Publication number: 20210293937
    Abstract: According to one embodiment, a light detector includes a first semiconductor region of a first conductivity type, a first element, a second element, an insulating body, a first interconnect, and a second interconnect. The second semiconductor region of the first element is provided on the first semiconductor region. The third semiconductor region of the first element is provided on the second semiconductor region. The fourth semiconductor region of the second element is provided on the first semiconductor region, and has an impurity concentration of a first conductivity type less than in the second semiconductor region. The fifth semiconductor region of the second element is provided on the fourth semiconductor region. The insulating body is provided between the first element and the second element. The first interconnect is electrically connected to the third semiconductor region. The second interconnect is electrically connected to the fifth semiconductor region.
    Type: Application
    Filed: September 9, 2020
    Publication date: September 23, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ikuo FUJIWARA, Honam KWON, Keita SASAKI, Kazuhiro SUZUKI, Masaki ATSUTA, Mariko SHIMIZU, Kazuaki OKAMOTO
  • Publication number: 20210296381
    Abstract: A photodetector includes a first semiconductor layer including a light detection region and a peripheral region on a first surface on which light is incident. The light detection region is a region in which light detecting units are arrayed. The peripheral region is a semiconductor region disposed on the periphery of the light detection region and not including a light detecting unit. A density of a lattice defect or a concentration of impurity in a first layer region that is at least a part in a thickness direction of the peripheral region is higher than a density of a lattice defect or a concentration of impurity in a second layer region adjacent to the first layer region in a direction intersecting the thickness direction in the light detection region.
    Type: Application
    Filed: August 28, 2020
    Publication date: September 23, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaki ATSUTA, Kazuhiro SUZUKI, Ikuo FUJIWARA, Honam KWON, Yuki NOBUSA
  • Publication number: 20210132230
    Abstract: According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.
    Type: Application
    Filed: September 9, 2020
    Publication date: May 6, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ikuo FUJIWARA, Honam KWON, Yuki NOBUSA, Keita SASAKI, Kazuhiro SUZUKI, Masaki ATSUTA
  • Publication number: 20210082986
    Abstract: According to one embodiment, a light detector includes an element and a quenching resistance. The element includes a photodiode. The quenching resistance is electrically connected to the element. The quenching resistance includes a semiconductor member and a plurality of first metal members. The plurality of first metal members is electrically connected to the semiconductor member and separated from each other.
    Type: Application
    Filed: March 11, 2020
    Publication date: March 18, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Honam KWON, lkuo FUJIWARA, Keita SASAKI, Kazuhiro SUZUKI
  • Publication number: 20210063545
    Abstract: According to one embodiment, a light detector includes a conductive layer, a first element, a second element, a first member, a first insulating part, and a second insulating part. The conductive layer includes a first conductive portion and a second conductive portion. The first element includes a first semiconductor layer and a second semiconductor layer. The second element includes a fourth semiconductor layer and a fifth semiconductor layer. The first member is provided between the first element and the second element and electrically connected to the conductive layer. The first member is conductive. The first insulating part is provided between the first element and the first member. The second insulating part is provided between the second element and the first member.
    Type: Application
    Filed: March 9, 2020
    Publication date: March 4, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Honam KWON, Koichi ISHII, lkuo FUJIWARA, Kazuhiro SUZUKI
  • Patent number: 10879415
    Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: December 29, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Honam Kwon, Toshiya Yonehara, Hitoshi Yagi, Ikuo Fujiwara, Kazuhiro Suzuki
  • Publication number: 20200301129
    Abstract: According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.
    Type: Application
    Filed: August 27, 2019
    Publication date: September 24, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Honam KWON, Koichi Ishii, Ikuo Fujiwara, Kazuhiro Suzuki
  • Publication number: 20200295217
    Abstract: A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.
    Type: Application
    Filed: August 28, 2019
    Publication date: September 17, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masaki ATSUTA, Kazuhiro SUZUKI, Ikuo FUJIWARA, Honam KWON, Keita SASAKI, Yuki NOBUSA