Patents by Inventor Hong-Hui Hsu
Hong-Hui Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11342496Abstract: A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.Type: GrantFiled: April 29, 2020Date of Patent: May 24, 2022Assignee: HeFeChip Corporation LimitedInventors: Hong-Hui Hsu, Wei-Chuan Chen, Qinli Ma, Shu-Jen Han
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Publication number: 20210343930Abstract: A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiOx1Ny1 and an inner silicon oxynitride layer with a composition of SiOx2Ny2, wherein x1/y1>x2/y2.Type: ApplicationFiled: April 29, 2020Publication date: November 4, 2021Inventors: Hong-Hui Hsu, Wei-Chuan Chen, Qinli Ma, Shu-Jen Han
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Publication number: 20200066177Abstract: A multi-view display device includes a display screen component and an optical structure component. The display screen component includes a plurality of pixels, and each of the plurality of pixels includes a left sub-pixel and a right sub-pixel. The optical structure component is disposed at the display screen component. When light beams from the left sub-pixel and light beams from the right sub-pixel of the each of the plurality of pixels pass through the optical structure component, the optical structure component separates the light beams from the left sub-pixel and the light beams from the right sub-pixel so as to generate correspondingly a left image and a right image to reach the first pilot position and the second pilot position, respectively. In addition, a manipulation simulation device is also provided.Type: ApplicationFiled: August 23, 2019Publication date: February 27, 2020Inventors: JUNG-YU LI, SHIH-PU CHEN, YI-PING LIN, HONG-HUI HSU, MEI-TAN WANG
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Patent number: 9385086Abstract: A robust metallization profile is formed by forming two or more layers of hard mask with different density. Multi-layer metal hard mask is helpful especially in small feature size process, for example, 50 nm and below. Lower layers have higher density. In such ways, enough process window is offered by lower layers and at the same time, round hard mask profile is offered by upper layers.Type: GrantFiled: December 10, 2013Date of Patent: July 5, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shing-Chyang Pan, Ching-Hua Hsieh, Hong-Hui Hsu
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Patent number: 9330915Abstract: A robust metallization profile is formed by pre-treat an anti-reflective coating layer by plasma before forming a hard mask layer. Pre-treatment is helpful especially in small feature size process, for example, 50 nm and below. By changing constitution of a surface layer of the anti-reflective coating, interface of the anti-reflective coating layer and the hard mask layer is smoothed which results in less overhang and better gap-filling performance.Type: GrantFiled: December 10, 2013Date of Patent: May 3, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shing-Chyang Pan, Ching-Hua Hsieh, Hong-Hui Hsu, Yao-Jen Chang
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Publication number: 20150162280Abstract: A robust metallization profile is formed by pre-treat an anti-reflective coating layer by plasma before forming a hard mask layer. Pre-treatment is helpful especially in small feature size process, for example, 50 nm and below. By changing constitution of a surface layer of the anti-reflective coating, interface of the anti-reflective coating layer and the hard mask layer is smoothed which results in less overhang and better gap-filling performance.Type: ApplicationFiled: December 10, 2013Publication date: June 11, 2015Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shing-Chyang Pan, Ching-Hua Hsieh, Hong-Hui Hsu, Yao-Jen Chang
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Publication number: 20150162282Abstract: A robust metallization profile is formed by forming two or more layers of hard mask with different density. Multi-layer metal hard mask is helpful especially in small feature size process, for example, 50 nm and below. Lower layers have higher density. In such ways, enough process window is offered by lower layers and at the same time, round hard mask profile is offered by upper layers.Type: ApplicationFiled: December 10, 2013Publication date: June 11, 2015Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shing-Chyang Pan, Ching-Hua Hsieh, Hong-Hui Hsu
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Patent number: 8216877Abstract: A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.Type: GrantFiled: April 5, 2011Date of Patent: July 10, 2012Assignee: Promos Technologies Inc.Inventors: Yen Chuo, Hong-Hui Hsu
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Patent number: 7989795Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.Type: GrantFiled: September 18, 2007Date of Patent: August 2, 2011Assignees: ProMOS Technologies Inc., Nanya Technology Corporation, Winbond Electronics Corp.Inventors: Wei-Su Chen, Yi-Chan Chen, Hong-Hui Hsu, Chien-Min Lee, Der-Sheng Chao, Chih Wei Chen, Ming-Jinn Tsai
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Publication number: 20110177667Abstract: A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.Type: ApplicationFiled: April 5, 2011Publication date: July 21, 2011Inventors: Yen CHUO, Hong-Hui Hsu
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Patent number: 7964862Abstract: Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a first electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer and the first electrode. A phase change material layer disposed in the second dielectric layer to electrically contact the first electrode. A third dielectric layer is disposed over the second dielectric layer. A second electrode is disposed in the third dielectric layer to electrically connect the phase change material layer and at least one gap disposed in the first dielectric layer or the second dielectric layer to thereby isolate portions of the phase change material layer and portions of the first or second dielectric layer adjacent thereto.Type: GrantFiled: March 26, 2008Date of Patent: June 21, 2011Assignee: Industrial Technology Research InstituteInventors: Frederick T Chen, Yen Chuo, Hong-Hui Hsu, Jyi-Tyan Yeh, Ming-Jinn Tsai
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Patent number: 7923714Abstract: Phase change memory cell structures and methods for fabricating the same are provided. An exemplary embodiment of a phase change memory cell structure includes a first electrode formed over a first dielectric layer. A second dielectric layer is formed over the first electrode. A conductive member is formed through the second dielectric layer and electrically contacting the first electrode, wherein the conductive member comprises a lower element and an upper element sequentially stacking over the first electrode, and the lower and upper elements comprises different materials. A phase change material layer is formed over the second dielectric layer, electrically contacting the conductive member. A second electrode is formed over the phase change material layer.Type: GrantFiled: April 21, 2008Date of Patent: April 12, 2011Assignee: Industrial Technology Research InstituteInventor: Hong-Hui Hsu
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Patent number: 7868314Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.Type: GrantFiled: August 26, 2009Date of Patent: January 11, 2011Assignee: Industrial Technology Research InstituteInventors: Wei-Su Chen, Yi-Chan Chen, Wen-Han Wang, Hong-Hui Hsu, Chien-Min Lee, Yen Chuo, Te-Sheng Chao, Min-Hung Lee
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Patent number: 7835177Abstract: A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.Type: GrantFiled: July 27, 2006Date of Patent: November 16, 2010Assignee: Industrial Technology Research InstituteInventors: Hong-Hui Hsu, Chien-Min Lee, Wen-Han Wang, Min-Hung Lee, Te-Sheng Chao, Yen Chuo, Yi-Chan Chen, Wei-Su Chen
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Publication number: 20100140583Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.Type: ApplicationFiled: August 26, 2009Publication date: June 10, 2010Applicant: Industrial Technology Research InstituteInventors: Wei-Su Chen, Yi-Chan Chen, Wen-Han Wang, Hong-Hui Hsu, Chien-Min Lee, Yen Chuo, Te-Sheng Chao, Min-Hung Lee
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Patent number: 7626191Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.Type: GrantFiled: May 17, 2006Date of Patent: December 1, 2009Assignee: Industrial Technology Research InstituteInventors: Te-Sheng Chao, Wen-Han Wang, Min-Hung Lee, Hong-Hui Hsu, Chien-Min Lee, Yen Chuo, Yi-Chan Chen, Wei-Su Chen
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Patent number: 7598113Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.Type: GrantFiled: June 30, 2006Date of Patent: October 6, 2009Assignee: Industrial Technology Research InstituteInventors: Wei-Su Chen, Yi-Chan Chen, Wen-Han Wang, Hong-Hui Hsu, Chien-Min Lee, Yen Chuo, Te-Sheng Chao, Min-Hung Lee
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Publication number: 20090014705Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT). A phase change material layer covers the heating electrode. A second conductive layer is formed on the phase change material layer, and electrically connected to the phase change material layer.Type: ApplicationFiled: May 27, 2008Publication date: January 15, 2009Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventors: Hong-Hui Hsu, Frederick T. Chen, Ming-Jer Kao
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Publication number: 20080296552Abstract: Phase change memory cell structures and methods for fabricating the same are provided. An exemplary embodiment of a phase change memory cell structure includes a first electrode formed over a first dielectric layer. A second dielectric layer is formed over the first electrode. A conductive member is formed through the second dielectric layer and electrically contacting the first electrode, wherein the conductive member comprises a lower element and an upper element sequentially stacking over the first electrode, and the lower and upper elements comprises different materials. A phase change material layer is formed over the second dielectric layer, electrically contacting the conductive member. A second electrode is formed over the phase change material layer.Type: ApplicationFiled: April 21, 2008Publication date: December 4, 2008Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventor: Hong-Hui Hsu
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Publication number: 20080265238Abstract: Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a first electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer and the first electrode. A phase change material layer disposed in the second dielectric layer to electrically contact the first electrode. A third dielectric layer is disposed over the second dielectric layer. A second electrode is disposed in the third dielectric layer to electrically connect the phase change material layer and at least one gap disposed in the first dielectric layer or the second dielectric layer to thereby isolate portions of the phase change material layer and portions of the first or second dielectric layer adjacent thereto.Type: ApplicationFiled: March 26, 2008Publication date: October 30, 2008Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventors: Frederick T. Chen, Yen Chuo, Hong-Hui Hsu, Jyi-Tyan Yeh, Ming-Jinn Tsai