Abstract: Phase change memory devices and fabrication methods thereof. A phase change memory device comprises a stacked heating element with a conductive portion and a relatively high resistive portion, wherein the relatively high resistive portion includes a nitrogen-containing metal silicide part. The heating stacked element such as a highly resistive nitrogen-containing metal silicide (MSixNy) is formed by a self-aligned silicidizing and nitrifying process. Self-aligned silicidization can be achieved by nitrogen ion implantation or nitrogen-containing plasma treatment. The resistance of the heating element can be regulated by adjusting the content of nitrogen or degree of nitrification.

Abstract: A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate. A metal plug is disposed on the substrate and a phase change material film is disposed on the metal plug, wherein the metal plug is electrically connected to the phase change material film. A heating electrode is disposed on the phase change material film, wherein the heating electrode is electrically connected to the phase change material film. A conductive layer is disposed on the heating electrode.

Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

Abstract: A phase-change memory and fabrication method thereof are disclosed. The phase-change memory comprises a first dielectric layer with a first opening formed on a substrate. A first electrode is filled into the first opening. A second dielectric pillar is formed on the first electrode. A first conducting layer is formed on the sidewalls of the second dielectric pillar, electrically connecting the first electrode. A third dielectric layer is formed on the substrate, exposing the top surface of the first conducting layer. A phase-change layer is formed on the third dielectric layer and directly contacts the top surface of the first conducting layer. A fourth dielectric layer, having a second opening exposing the top surface of the phase-change layer, is formed on the substrate. A second conducting layer is filled into the second opening, electrically connecting to a second electrode.

Abstract: The invention provides a phase change memory device comprising a stacked structure disposed on a substrate. The stacked structure comprises a first electrode, a second electrode overlying the first electrode and an insulating layer interposed between the first and the second electrodes. A memory spacer is formed on part of the sidewall of the stacked structure to contact the first electrode, the insulating layer and the second electrode.

Abstract: A phase-change memory layer and method for manufacturing the same and a phase-change memory cell are provided. The phase-change memory layer is crystallized by adding one or more heterogeneous crystals that do not react with phase-change materials as the crystal nucleus, so as to reduce the time for transforming to the crystalline state from the amorphous state.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A phase change memory (PCM) cell and fabricating method thereof are provided. A phase change layer is etched into a tapered structure, and then a dielectric layer on the phase change layer is planarized, until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, when the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced; thereby the operation current is lowered.

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract: A non-via method of connecting a magnetoelectric element with a conductive line. A magnetoelectric element is formed on a substrate, and spacers are formed on side walls of the magnetoelectric element. A dielectric layer is deposited over the substrate and magnetoelectric element and planarized to a level above the magnetoelectric element. The dielectric layer is etched to expose the upper surface of the magnetoelectric element, and a conductive line is formed on the magnetoelectric element.