Patents by Inventor Hong Ji

Hong Ji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170126773
    Abstract: A method and device for processing information are provided. The method includes: judging whether a screen-sharing request from a peer device is received via a wireless network transmission link; when it is judged that the screen-sharing request from the peer device is received, obtaining an Internet Protocol (IP) address and a port number of the peer device; generating, according to the IP address and the port number, a Uniform Resource Locator (URL) corresponding to media data that is used for playing screen content of the peer device; determining a standard player corresponding to the URL; and playing the media data corresponding to the URL using the standard player.
    Type: Application
    Filed: April 29, 2016
    Publication date: May 4, 2017
    Inventors: GUIZHOU WU, HONG JI, XIANZHE WEI
  • Patent number: 9627247
    Abstract: Provided is a method of fabricating a semiconductor device, including the following. A first material layer, a second material layer and a mask layer are formed on a substrate. A portion of the second material layer is removed by performing a first etching process with the mask layer as a mask, so as to expose the first material layer and form a first pattern layer and a second pattern layer. A portion of the first material layer is removed by performing a second etching process with the mask layer as a mask, so as to expose a portion of the substrate. A portion of the substrate is removed by performing a third etching process with the mask layer as a mask, so as to form first trenches and second trenches. Sidewalls of the second trenches and a surface of the substrate form at least two different angles.
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: April 18, 2017
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Fang-Hao Hsu, Hong-Ji Lee
  • Publication number: 20170088896
    Abstract: Provided herein are methods and kits related to use of vanin-1 (VNN1) expression for assessing responsiveness to steroid treatment in subjects with asthma and for treating subjects with asthma.
    Type: Application
    Filed: May 15, 2015
    Publication date: March 30, 2017
    Applicant: Children's Hospital Medical Center d/b/a Cincinnati Children's Hospital, Medical Center
    Inventors: Gurjit Khurana Hershey, Jocelyn Biagini Myers, Hong Ji, Lisa J. Martin
  • Publication number: 20170053517
    Abstract: The present disclosure relates to controlling a mobile device to provide a reminder even when the mobile device experiences a shutdown state. By controlling the mobile device to provide the reminder even when the mobile device experiences a shutdown state, the reminder may still be presented on the mobile device when an operating system of the mobile device has not been initiated.
    Type: Application
    Filed: August 4, 2016
    Publication date: February 23, 2017
    Applicant: Xiaomi Inc
    Inventors: Kangxi Tan, Li He, Hong Ji
  • Publication number: 20160358810
    Abstract: Provided is a method of fabricating a semiconductor device, including the following. A first material layer, a second material layer and a mask layer are formed on a substrate. A portion of the second material layer is removed by performing a first etching process with the mask layer as a mask, so as to expose the first material layer and form a first pattern layer and a second pattern layer. A portion of the first material layer is removed by performing a second etching process with the mask layer as a mask, so as to expose a portion of the substrate. A portion of the substrate is removed by performing a third etching process with the mask layer as a mask, so as to form first trenches and second trenches. Sidewalls of the second trenches and a surface of the substrate form at least two different angles.
    Type: Application
    Filed: June 3, 2015
    Publication date: December 8, 2016
    Inventors: Fang-Hao Hsu, Hong-Ji Lee
  • Patent number: 9489555
    Abstract: A method and system for reading code symbols using a code symbol reading system having a programmable decode time-window filter mode of operation. During this mode of operation, only decoded code symbols that have been scanned within a selected (e.g. central) portion of the laser scan line field are processed according to a special decode time-window filtering function. In particular, if the decoded bar code symbol is a programming-type bar code symbol, then the system controller applies the function represented by the programming-type bar code symbol; and if the decoded bar code symbol is a non-programming-type bar code symbol, then the system controller either transmits symbol character data associated therewith to the host system or stores the symbol character data within memory aboard the bar code symbol reading system.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: November 8, 2016
    Assignee: Metrologic Instruments, Inc.
    Inventors: David M. Wilz, Sr., Sergio Movsessian, Hong Ji, Thomas Haggerty
  • Publication number: 20160321325
    Abstract: Methods, apparatus and storage medium are disclosed for obtaining and rendering adaptive information in accordance with a current living setting of a user of a smart device. In one embodiment, the smart device monitors and detects triggering information for a scheduled event. When the event is triggered, the smart device queries a mapping between various triggering information and a plurality of living settings of the user of the smart device. Each living setting corresponds to a set of adaptive information tailored to that particular living setting. The smart device then determines the living setting based on the query, and then obtains and renders the corresponding set of adaptive information automatically.
    Type: Application
    Filed: April 14, 2016
    Publication date: November 3, 2016
    Applicant: Xiaomi Inc.
    Inventors: Xingchao Wang, Yanhuan Peng, Hong Ji
  • Publication number: 20160300761
    Abstract: A method of fabricating a semiconductor device is provided. A dielectric layer is formed on a barrier layer. A first opening is formed in the dielectric layer and exposes a portion of the barrier layer. A protection layer is formed on the barrier layer at the bottom of the first opening. The protection layer is thicker at the central portion while thinner at the edge portion thereof. A portion of the exposed barrier layer is removed by using the protection layer as a mask to form a second opening. The second opening has at least one sub-opening disposed in the barrier layer adjacent to the sidewall of the second opening. A semiconductor device formed with the method is also provided.
    Type: Application
    Filed: April 8, 2015
    Publication date: October 13, 2016
    Inventors: Xin-Guan Lin, Hong-Ji Lee
  • Patent number: 9465797
    Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for translating text using a bridge language.
    Type: Grant
    Filed: February 23, 2012
    Date of Patent: October 11, 2016
    Assignee: Google Inc.
    Inventor: Hong Ji
  • Patent number: 9449915
    Abstract: Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate and a dielectric layer. The dielectric layer is located on the substrate. The dielectric layer has a plurality of openings, and side walls of the openings have concave-and-convex profile.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: September 20, 2016
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Hong-Ji Lee, Hsu-Sheng Yu
  • Patent number: 9425086
    Abstract: A method of eliminating overhang in a contact hole formed in a contact film stack is described. A liner layer is overlaid on the contact film stack, the liner also coating the contact hole. A portion of the liner is removed to expose the overhang, and the exposed overhang is removed. The liner is also used to fill-in a bowing profile of the contact hole, thereby rendering sidewalls of the contact hole smooth and straight suitable for metal fill-in while suppressing piping defects.
    Type: Grant
    Filed: December 21, 2013
    Date of Patent: August 23, 2016
    Assignee: Macronix International Co., Ltd.
    Inventors: Fang-Hao Hsu, Hsu-Sheng Yu, Kuo-Feng Lo, Hong-Ji Lee
  • Publication number: 20160190334
    Abstract: Provided is a memory device including a substrate, a plurality of tunneling dielectric layers, a plurality of isolation structures, and a plurality of cap layers. The tunneling dielectric layers are located on the substrate. Each isolation structure has an upper portion and a lower portion. The lower portions of the isolation structures are located in the substrate and arranged alternately with the tunneling dielectric layers along a first direction. The upper portions of the isolation structures are located on the lower portions. The cap layers are located on the upper portions. A top surface of the cap layer is a planar surface.
    Type: Application
    Filed: December 24, 2014
    Publication date: June 30, 2016
    Inventors: Hong-Ji Lee, Han-Hui Hsu
  • Publication number: 20160190061
    Abstract: Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate and a dielectric layer. The dielectric layer is located on the substrate. The dielectric layer has a plurality of openings, and side walls of the openings have concave-and-convex profile.
    Type: Application
    Filed: December 24, 2014
    Publication date: June 30, 2016
    Inventors: Hong-Ji Lee, Hsu-Sheng Yu
  • Patent number: 9337036
    Abstract: Effects of copper oxide formation in semiconductor manufacture are mitigated by etching with sulfide plasmas. The plasmas form protective copper sulfide films on copper surfaces and prevent copper oxide formation. When copper oxide formation does occur, the sulfide plasmas are able to transform the copper oxide into acceptable or more conductive copper compounds. Non-oxide copper compounds are removed using clear wet strips.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: May 10, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Zusing Yang, Hong-Ji Lee
  • Patent number: 9305840
    Abstract: A cluster tool is disclosed that can increase throughput of a wafer fabrication process by facilitating removal of barrier overhang in contact holes of contact film stacks. Individual chambers of the cluster tool provide for deposition of barrier material onto a semiconductor structure, depositing over with an amorphous carbon film (ACF), etching back the ACF, and etching a corner region of the contact hole. Removal of the barrier overhang improves the quality of metal fill-in of the contact hole. An expectedly ensuing feature entails a technique in which filling-in of the contact hole with a metal such as tungsten can be achieved with attenuated or eliminated adverse consequence.
    Type: Grant
    Filed: December 21, 2013
    Date of Patent: April 5, 2016
    Assignee: MACRONIX INTERNATIONAL Co., LTD.
    Inventors: Hsu-Sheng Yu, Hong-Ji Lee, N. T. Lian, T. H. Yang
  • Patent number: 9299667
    Abstract: A method is described that facilitates inter-layer dielectric fill-in among transistors in a densely-configured array of an integrated circuit. An etch process that exploits a micro-loading effect to create a T-shaped profile between transistors is disclosed. The micro-loading has a negligible effect on transistors in a peripheral region of the integrated circuit.
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: March 29, 2016
    Assignee: MACRONICS INTERNATIONAL COMPANY, LTD.
    Inventors: Fang-Hao Hsu, Shih-Ping Hong, Hong-Ji Lee
  • Patent number: 9287285
    Abstract: A self-align method of preparing semiconductor gates for formation of a silicide, such as a cobalt silicide (CoSi) layer, is disclosed. Deposition of silicon nitride (SiN) and low-temperature oxide (LTO) liner types, the SiN liner having an overhang structure, prevent damage to the gates while forming a self-aligned source. The undamaged gates are suitable for CoSi deposition.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: March 15, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Fang-Hao Hsu, Zusing Yang, Hong-Ji Lee
  • Publication number: 20160064479
    Abstract: A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a first dielectric layer, a first conductive layer, and an isolation structure. The substrate has a trench. The first dielectric layer is disposed on the substrate between two neighboring trenches. The first conductive layer is disposed on the first dielectric layer. The isolation structure, including a step zone and a recessed zone, is disposed in the trench, wherein an upper surface of the step zone is higher than an upper surface of the first dielectric layer.
    Type: Application
    Filed: August 26, 2014
    Publication date: March 3, 2016
    Inventors: Fang-Hao Hsu, Hong-Ji Lee
  • Patent number: 9269660
    Abstract: A three-dimensional stacked IC device includes a stack of at least first, second, third and fourth contact levels at an interconnect region. Each contact level has a conductive layer and an insulation layer. First, second, third and fourth electrical conductors pass through portions of the stack of contact levels. The first, second, third and fourth electrical conductors are in electrical contact with the first, second, third and fourth conductive layers, respectively. A dielectric sidewall spacer circumferentially surrounds the second, third and fourth electrical conductors so that the second, third and fourth electrical conductors only electrically contact the respective second, third and fourth conductive layers.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: February 23, 2016
    Assignee: Macronix International Co., Ltd.
    Inventors: Shih-Hung Chen, Hang-Ting Lue, Hong-Ji Lee, Chin-Cheng Yang
  • Publication number: 20160024151
    Abstract: Peptides and peptide analogs that selectively inhibit angiotensin II and methods for making and using the same.
    Type: Application
    Filed: March 12, 2014
    Publication date: January 28, 2016
    Applicant: GEORGETOWN UNIVERSITY
    Inventors: Kathryn SANDBERG, Jun LIU, Hong JI