Patents by Inventor Hong Jung Kim
Hong Jung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210097219Abstract: An apparatus and a method optimize a restraint specification based on a particle swarm optimization algorithm using impact analysis between the restraint specification and passenger injuries. A passenger injury prediction value is generated according to the injury degree of a passenger by sequentially inputting values according to specifications of each design variable included in the injury result data into a particle swarm optimization algorithm. The optimization algorithm is implemented with a plurality of computational layers formed for each detailed configuration in order to search for an optimal specification of a restraint. Information on the optimal specification of the restraint is provided by calculating a comprehensive result indicator using the passenger injury prediction value. Thus, the information on the optimal specification of the restraint can be calculated without repetitive evaluation tests.Type: ApplicationFiled: July 16, 2020Publication date: April 1, 2021Applicants: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATIONInventors: Jong Hun Choi, Hong Jung Kim, Seung Kyu Kang
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Patent number: 10944304Abstract: Disclosed herein are a motor and a method of manufacturing the motor. The motor includes a rotor, a stator including a plurality of coil bobbin unit groups, and a coil prepared on coil bobbin units by winding a wire sequentially on coil bobbin units of each coil bobbin unit group, cutting the wound wire at a cutting point, connecting one end of the cut wire to a neutral point port, and connecting the other end of the cut wire to a driving point port.Type: GrantFiled: March 25, 2015Date of Patent: March 9, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hong Jung Kim, Byoung Soo Ko, Tae Ho Yoon, Yong Hyun Jeon
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Patent number: 10777241Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to generate internal commands, internal addresses and internal data for performing an initialization operation. The second semiconductor device may be configured to store the internal data in a plurality of memory cells selected by the internal commands and the internal addresses.Type: GrantFiled: November 30, 2018Date of Patent: September 15, 2020Assignee: SK hynix Inc.Inventors: Dae Suk Kim, Jae Il Kim, Hong Jung Kim
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Patent number: 10490236Abstract: A semiconductor memory device includes a sense amplifier control circuit configured to generate a first sense amplifier driving voltage application signal, a second sense amplifier driving voltage application signal and a third sense amplifier driving voltage application signal in response to an active signal, a precharge signal and a write pulse; and a sense amplifier driving voltage providing circuit configured to provide driving voltages to a sense amplifier through first and second driving voltage application lines during enable periods of the first to third sense amplifier driving voltage application signals.Type: GrantFiled: June 22, 2018Date of Patent: November 26, 2019Assignee: SK hynix Inc.Inventors: Hyung Sik Won, Hong Jung Kim
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Patent number: 10374479Abstract: A motor is provided. The motor includes: a rotor; a stator inside which the rotor is rotatably disposed and including a plurality of teeth protruding toward the rotor; a plurality of insulating films disposed in respective slots formed between the plurality of teeth to insulate a coil wound around the plurality of teeth from the respective teeth; and insulating members covering upper and lower portions of the stator, respectively, wherein the plurality of insulating films are fixed by the plurality of teeth and the insulating members.Type: GrantFiled: February 3, 2017Date of Patent: August 6, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-bum Lee, Hong-jung Kim, Gyeong-don Kim, Young-ju Ryu, Ji-hoon Lee, Jae-jin Cho, Jong-hyun Choi, In-cheol Hwang
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Publication number: 20190164580Abstract: A semiconductor memory device includes a sense amplifier control circuit configured to generate a first sense amplifier driving voltage application signal, a second sense amplifier driving voltage application signal and a third sense amplifier driving voltage application signal in response to an active signal, a precharge signal and a write pulse; and a sense amplifier driving voltage providing circuit configured to provide driving voltages to a sense amplifier through first and second driving voltage application lines during enable periods of the first to third sense amplifier driving voltage application signals.Type: ApplicationFiled: June 22, 2018Publication date: May 30, 2019Inventors: Hyung Sik WON, Hong Jung KIM
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Publication number: 20190096455Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to generate internal commands, internal addresses and internal data for performing an initialization operation. The second semiconductor device may be configured to store the internal data in a plurality of memory cells selected by the internal commands and the internal addresses.Type: ApplicationFiled: November 30, 2018Publication date: March 28, 2019Applicant: SK hynix Inc.Inventors: Dae Suk KIM, Jae Il KIM, Hong Jung KIM
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Patent number: 10147471Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to generate internal commands, internal addresses and internal data for performing an initialization operation. The second semiconductor device may be configured to store the internal data in a plurality of memory cells selected by the internal commands and the internal addresses.Type: GrantFiled: June 16, 2017Date of Patent: December 4, 2018Assignee: SK hynix Inc.Inventors: Dae Suk Kim, Jae Il Kim, Hong Jung Kim
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Patent number: 10037788Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output commands and addresses. The first semiconductor device may be configured to output a strobe signal toggled and data after an initialization operation. The second semiconductor device may be configured to start the initialization operation if the commands have a first combination and stores internal data having a predetermined level during a set period of the initialization operation if the commands have a second combination.Type: GrantFiled: June 16, 2017Date of Patent: July 31, 2018Assignee: SK hynix Inc.Inventors: Jae Il Kim, Hong Jung Kim, Dae Suk Kim
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Publication number: 20180040354Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a reset signal, command/address signals and data. The second semiconductor device may be configured to generate internal commands, internal addresses and internal data for performing an initialization operation. The second semiconductor device may be configured to store the internal data in a plurality of memory cells selected by the internal commands and the internal addresses.Type: ApplicationFiled: June 16, 2017Publication date: February 8, 2018Applicant: SK hynix Inc.Inventors: Dae Suk KIM, Jae Il KIM, Hong Jung KIM
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Publication number: 20180040355Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output commands and addresses. The first semiconductor device may be configured to output a strobe signal toggled and data after an initialization operation. The second semiconductor device may be configured to start the initialization operation if the commands have a first combination and stores internal data having a predetermined level during a set period of the initialization operation if the commands have a second combination.Type: ApplicationFiled: June 16, 2017Publication date: February 8, 2018Applicant: SK hynix Inc.Inventors: Jae Il KIM, Hong Jung KIM, Dae Suk KIM
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Patent number: 9747970Abstract: A refresh circuit is configured to perform a first refresh operation for a plurality of memory banks. The first refresh operation may be performed within a first time period determined according to a first parameter. The refresh circuit may be configured to perform a second refresh operation for a partial number of memory banks among the plurality of memory banks. The second refresh operation may be performed for the partial number of memory banks that have completed the first refresh operation. The second refresh operation may be performed within the first time period.Type: GrantFiled: November 12, 2014Date of Patent: August 29, 2017Assignee: SK hynix Inc.Inventor: Hong Jung Kim
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Patent number: 9741931Abstract: A semiconductor integrated circuit device may include a first signal line, a second signal line, a variable resistance material layer, and a third signal line. The second signal line may be positioned coplanar with the first signal line. The second signal line may be parallel to the first signal line. The variable resistance material layer may include a horizontal region arranged on the first and second signal lines, and may include a vertical region extending upwardly from an end of the horizontal region. The third signal line may be positioned on a plane different from a plane on which the first and second signal lines may be positioned. The third signal line may be arranged on an end of the vertical region of the variable resistance material layer.Type: GrantFiled: January 12, 2017Date of Patent: August 22, 2017Assignee: SK hynix Inc.Inventors: Hong Jung Kim, Young Hee Yoon, Jeong Ho Yi
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Publication number: 20170222513Abstract: A motor is provided. The motor includes: a rotor; a stator inside which the rotor is rotatably disposed and including a plurality of teeth protruding toward the rotor; a plurality of insulating films disposed in respective slots formed between the plurality of teeth to insulate a coil wound around the plurality of teeth from the respective teeth; and insulating members covering upper and lower portions of the stator, respectively, wherein the plurality of insulating films are fixed by the plurality of teeth and the insulating members.Type: ApplicationFiled: February 3, 2017Publication date: August 3, 2017Inventors: Dong-bum Lee, Hong-jung Kim, Gyeong-don Kim, Young-ju Ryu, Ji-hoon Lee, Jae-jin Cho, Jong-hyun Choi, In-cheol Hwang
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Publication number: 20170126085Abstract: Disclosed herein are a motor and a method of manufacturing the motor. The motor includes a rotor, a stator including a plurality of coil bobbin unit groups, and a coil prepared on coil bobbin units by winding a wire sequentially on coil bobbin units of each coil bobbin unit group, cutting the wound wire at a cutting point, connecting one end of the cut wire to a neutral point port, and connecting the other end of the cut wire to a driving point port.Type: ApplicationFiled: March 25, 2015Publication date: May 4, 2017Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hong Jung KIM, Byoung Soo KO, Tae Ho YOON, Yong Hyun JEON
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Publication number: 20160111172Abstract: A semiconductor device includes: a plurality of repair fuse circuits configured to each program a repair target address; and an enable signal generation circuit configured to generate at least one enable signal in response to a source signal and provide the enable signal to each of the repair fuse circuits in common. Since the semiconductor device may iteratively generate a rupture enable signal through a feedback scheme, the area occupied by a circuit, such as a shift register or a D flip-flop may be saved.Type: ApplicationFiled: December 29, 2015Publication date: April 21, 2016Inventor: Hong-Jung KIM
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Patent number: 9257158Abstract: A semiconductor device includes: a plurality of repair fuse circuits configured to each program a repair target address; and an enable signal generation circuit configured to generate at least one enable signal in response to a source signal and provide the enable signal to each of the repair fuse circuits in common. Since the semiconductor device may iteratively generate a rupture enable signal through a feedback scheme, the area occupied by a circuit, such as a shift register or a D flip-flop may be saved.Type: GrantFiled: July 10, 2014Date of Patent: February 9, 2016Assignee: SK Hynix Inc.Inventor: Hong-Jung Kim
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Publication number: 20160027491Abstract: A refresh circuit is configured to perform a first refresh operation for a plurality of memory banks. The first refresh operation may be performed within a first time period determined according to a first parameter. The refresh circuit may be configured to perform a second refresh operation for a partial number of memory banks among the plurality of memory banks. The second refresh operation may be performed for the partial number of memory banks that have completed the first refresh operation. The second refresh operation may be performed within the first time period.Type: ApplicationFiled: November 12, 2014Publication date: January 28, 2016Inventor: Hong Jung KIM
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Publication number: 20140321219Abstract: A semiconductor device includes: a plurality of repair fuse circuits configured to each program a repair target address; and an enable signal generation circuit configured to generate at least one enable signal in response to a source signal and provide the enable signal to each of the repair fuse circuits in common. Since the semiconductor device may iteratively generate a rupture enable signal through a feedback scheme, the area occupied by a circuit, such as a shift register or a D flip-flop may be saved.Type: ApplicationFiled: July 10, 2014Publication date: October 30, 2014Inventor: Hong-Jung KIM
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Patent number: 8780603Abstract: A semiconductor device includes: a plurality of repair fuse circuits configured to each program a repair target address; and an enable signal generation circuit configured to generate at least one enable signal in response to a source signal and provide the enable signal to each of the repair fuse circuits in common. Since the semiconductor device may iteratively generate a rupture enable signal through a feedback scheme, the area occupied by a circuit, such as a shift register or a D flip-flop may be saved.Type: GrantFiled: May 1, 2012Date of Patent: July 15, 2014Assignee: SK Hynix Inc.Inventor: Hong-Jung Kim