Abstract: A nano-optic device comprises a plurality of subwavelength apertures in a metal film or between metal islands. The device is adapted to shape a radiation beam transmitted there through. For example, beam shaping includes at least one of beam focusing, beam bending and beam collimating.

Abstract: A method for fabricating a non-volatile memory device. The method includes providing a substrate, e.g., silicon. The method also includes forming an oxide layer overlying the substrate; and forming a buffer layer overlying the oxide layer. A ferroelectric material is formed overlying the substrate and is formed preferably overlying the buffer layer. The method also includes forming a gate layer overlying the ferroelectric material, where the gate layer is overlying a channel region. The method further includes forming first source/drain region adjacent to a first side of the channel region and a second source/drain region adjacent to a second side of the channel region. In other embodiments, the method can also include other steps.

Abstract: An outer garment for children which is reversible and features animal characters on the hood and other parts of the jacket on both sides is disclosed. The present invention provides an economical alternative to children's outer wear by constructing a jacket that is reversible and features two different animal character ornamentations thus serving as two jackets. Ornamentation, while flat gives the appearance of three dimensions when worn. The inventive reversible jacket is fun and interesting for children to wear by increasing the level of curiosity and popularity of the garment, thus reducing the time it takes to dress a child by making the jacket more appealing. Also, the present invention discloses an outerwear construction that arouses interest in young children and thus makes the garment not easily misplaced.

Abstract: A method for fabricating a non-volatile memory device. The method includes providing a substrate, e.g., silicon. The method also includes forming an oxide layer overlying the substrate; and forming a buffer layer overlying the oxide layer. A ferroelectric material is formed overlying the substrate and is formed preferably overlying the buffer layer. The method also includes forming a gate layer overlying the ferroelectric material, where the gate layer is overlying a channel region. The method further includes forming first source/drain region adjacent to a first side of the channel region and a second source/drain region adjacent to a second side of the channel region. In other embodiments, the method can also include other steps.