Abstract: A semiconductor device includes a semiconductor substrate, at least one semiconductor fin and a gate stack. The semiconductor fin is disposed on the semiconductor substrate. The semiconductor fin includes a first portion, a second portion and a first neck portion between the first portion and the second portion. A width of the first portion decreases as the first portion becomes closer to the first neck portion, and a width of the second portion increases as the second portion becomes closer to a bottom surface of the semiconductor substrate. The gate stack partially covers the semiconductor fin.

Abstract: A video generation method, a video playing method, a video generation device, a video playing device, an electronic apparatus and a computer-readable storage medium are provided. The video generation method includes: acquiring a first video; executing Gaussian blur special effect processing on the first video to obtain a second video; superimposing an additional dynamic effect on the second video to generate a third video, wherein the additional dynamic effect is a dynamic image that presents a related information corresponding to the first video in a dynamic effect; and splicing the first video with the third video to generate a fourth video, wherein an image area of the fourth video comprises a first image area configured to display an image of the first video and a second image area configured to display an image of the third video.

Abstract: Described herein are antibodies (e.g., single chain variable fragment (scFv) antibodies) and constructs comprising antibody moieties that bind to the extracellular domain of CD22 or a portion thereof (e.g., SEQ ID NO: 205 or a portion thereof). Also provided herein are methods of using the same or compositions thereof for the therapeutic treatment of diseases characterized by CD22 expression, in particular, B-cell lymphomas and leukemias.

Abstract: Devices and methods of manufacture for a graduated, “step-like,” semiconductor structure having two or more resonator trenches. A semiconductor structure may comprise a first resonator and a second resonator. The first resonator comprising a first metallic resonance layer and a capping plate having a bottom surface that is a first distance from a distal end of the first metallic resonance layer 128. The second resonator comprising a second metallic resonance layer and the capping plate, in which the bottom surface is a second distance from a from a distal end of the second metallic resonance layer 128b, and in which first distance is different from the second distance.

Abstract: Disclosed is an ultrasonic electronic cigarette atomizer. An atomizer shell, an atomization piece and a liquid guide structure are arranged in the atomizer. The liquid guide structure communicates with a liquid storage cavity in the atomizer shell. A heating body is further arranged in the atomizer shell. Both of the atomization piece and the heating body are in contact with the liquid guide structure, and both of the heating body and an atomization surface of the atomization piece communicate with an airflow passage, and a positive electrode and a negative electrode of the heating body are respectively connected with one end and the other end of a power supply. The heating body can not only quickly heat the tobacco tar to approach to its atomization temperature, but also can transfer a part of heat to the atomization piece, so that the atomization piece atomizes the tobacco tar quickly, shortening the atomization time.

Abstract: An integrated circuit structure comprises a base and a plurality of metal levels over the base. A first metal level includes a first dielectric material. The first metal level further includes a first plurality of interconnect lines in the first dielectric material, wherein the first plurality of interconnect lines in the first metal level have variable widths from relatively narrow to relatively wide, and wherein the first plurality of interconnect lines have variable heights based on the variable widths, such that a relatively wide one of the first plurality of interconnect lines has a taller height from the substrate than a relatively narrow one of the first plurality of interconnect lines, and a shorter distance to a top of the first metal level.

Abstract: Non-planar I/O and logic semiconductor devices having different workfunctions on common substrates and methods of fabricating non-planar I/O and logic semiconductor devices having different workfunctions on common substrates are described. For example, a semiconductor structure includes a first semiconductor device disposed above a substrate. The first semiconductor device has a conductivity type and includes a gate electrode having a first workfunction. The semiconductor structure also includes a second semiconductor device disposed above the substrate. The second semiconductor device has the conductivity type and includes a gate electrode having a second, different, workfunction.

Abstract: A calling device of a MRI system may include a reader/writer and a call maker. The reader/writer can send a fixed-frequency electromagnetic wave. The call maker may include a main body, an antenna, an operating member, and an answering controller. The antenna can generate an induced current after receiving the fixed-frequency electromagnetic wave. The operating member can switch between first and second positions relative to the main body. The answering controller is configured such that: when the operating member is in the first position, a first radio-frequency signal is sent through the antenna with energy obtained from the induced current generated by the antenna, and when the operating member is in the second position, a second radio-frequency signal is sent through the antenna with energy obtained from the induced current generated by the antenna. The reader/writer can send different prompt signals according to the first and second radio-frequency signals.

Abstract: A negative electrode material on which a metal element is gradient-doped and an application thereof. The negative electrode material comprises a granular silica/M composite material on which a metal element M is gradient-doped. The general formula of the silica is SiOx, wherein 0<x<2. The metal element M comprises one or more among Na, Mg, Al, Li, Mn, Fe, Co, Ni, Cu, or Zn. In the negative electrode material, the content of the metal element M gradually decreases from the surface to the core, presenting a doping distribution having a continuous concentration gradient. The general chemical formula of the silica/M composite material is SiMyOz, wherein 0<y<10 and 0<z<10.

Abstract: Devices and methods of manufacture for a graduated, “step-like,” capacitance structure having two or more capacitors. A semiconductor structure comprising a capacitor structure, the capacitor structure comprising a first capacitor and a second capacitor. The first capacitor comprising a first bottom electrode and a top electrode having a bottom surface that is a first distance from a top surface of the first bottom electrode. The second capacitor comprising a second bottom electrode and the top electrode, in which the bottom surface is a second distance from a top surface of the second bottom electrode, and in which the first distance is different from the second distance.

Abstract: A silicon-based negative electrode material containing a silicate skeleton, a negative electrode plate and a lithium battery. The silicon-based negative electrode material comprises a modified silicon monoxide material having a dispersedly distributed silicate material inside same. The general formula of the modified silicon monoxide material is MxSiOy, with 1<x<6, 3<y<6, element M comprising one or more of Mg, Ni, Cu, Zn, Al, Na, Ca, K, Li, Fe and Co, and the grain size being 0.5-100 nm. In the modified silicon monoxide material, the content of the silicate material is 5-60% of the total mass of the modified silicon monoxide material. The dispersedly distributed silicate material forms a skeleton structure of the silicon-based negative electrode material, does not undergo a physicochemical reaction along with the lithium removal and lithium intercalation of the silicon-based negative electrode material in the cycle process, and maintains the original structure thereof after multiple cycles.

Abstract: This invention provides polynucleotide molecules and methods for regulating genes in plants, e. g., by providing RNA for systemic regulation of genes. Various aspects of the invention provide polynucleotide molecules and methods for regulating endogenous genes and transgenes in a plant cell and polynucleotide molecules.

Abstract: A wound multiple sensing method, including: calculating the similarity between the current data sequence and each of the case-data sequences in each of the reference cases; selecting the case-data sequence which has the greatest similarity with the current data sequence, from the case-data sequences in each of the reference cases, to be a similar case-data sequence in each of the reference cases, wherein each similar case-data sequence corresponds to a similar case treatment; performing a multiple regression analysis using the similar case-data sequences and the similar case treatments to calculate a fitness function, wherein the dependent variable of the fitness function is a wound change; performing a parameter optimization algorithm using the current data sequence and the fitness function to calculate an optimal treatment which maximizes the wound change, and to calculate an expected wound change value that corresponds to the optimal treatment.

Abstract: This application provides techniques of generating non-fungible token props to be displayed in live rooms. The techniques comprise determining a virtual prop associated with one of a plurality of live rooms in which an online streamer performs livestreaming; determining a set of material components of the virtual prop; generating a set of visual materials based on configuring a plurality of visual materials for each of the set of material components; and generating a set of non-fungible token props corresponding to the virtual prop based on a plurality of sets of visual materials corresponding to the set of material components, wherein an identifier is assigned to each of the set of non-fungible token props for identification.

Abstract: An ultrasound image processing apparatus includes an image processor arrangement that receives a plurality of ultrasound images. Each ultrasound image shows an invasive medical device relative to an anatomical feature during a cardiac cycle. At different phases of the cardiac cycle, the anatomical feature has a different shape. The ultrasound processing apparatus compiles groups of the ultrasound images with ultrasound images in each group belonging to the same phase of the cardiac cycle. The ultrasound image processing apparatus generates an augmented ultrasound image from one of the ultrasound images by removing a shadow region on the anatomical feature of interest caused by the invasive medical device based on a displacement of the invasive medical device.

Abstract: Provided herein are novel compounds, for example, compounds having a Formula (I), Formula (A), Formula (II), Formula (III), Formula (IV), or Formula (V), or a pharmaceutically acceptable salt thereof. Also provided herein are methods of preparing the compounds and methods of using the compounds, for example, in inhibiting KRASG12D in a cancer cell, and/or in treating various cancer such as pancreatic cancer, colorectal cancer, lung cancer (e.g., non-small cell lung cancer) or endometrial cancer.

Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer sequentially arranged on the back surface of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer, a third dielectric layer and a fourth dielectric layer on the first dielectric layer.

Abstract: A method includes: transferring a wafer from a factory interface through a load lock chamber to a buffer chamber; transferring the wafer from the buffer chamber to a process chamber; etching the wafer in the process chamber, to remove a material of the wafer; and after the wafer is etched, performing reflectance measurements to the wafer in the factory interface, the load lock chamber, the buffer chamber, or combination thereof, to identify if the material of the wafer is removed entirely according to a reflectance of the wafer.

Abstract: A semiconductor structure and a fabrication method are provided. The semiconductor structure includes: a base substrate, an optical waveguide layer over the base substrate; a first dielectric layer over the base substrate; a cavity between the first dielectric layer and the optical waveguide layer; and a second dielectric layer on the first dielectric layer and the optical waveguide layer. The cavity is located on sidewall surfaces of the optical waveguide layer and has a bottom coplanar with a bottom of the optical waveguide layer. The second dielectric layer is located on a top of the cavity and seals the cavity.