Patents by Inventor Hong Rak Son

Hong Rak Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200160923
    Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
    Type: Application
    Filed: January 21, 2020
    Publication date: May 21, 2020
    Inventors: HYE-JEONG SO, DONG-HWAN LEE, SEONG-HYEOG CHOI, EUN-CHU OH, JUN-JIN KONG, HONG-RAK SON, PIL-SANG YOON
  • Patent number: 10623019
    Abstract: A method of decoding a low density parity check (LDPC) code, includes dividing a parity check matrix of the LDPC code, into a plurality of sub blocks. The method further includes, for each of a plurality of decoding iterations, performing a node operation of each of target sub blocks among the plurality of sub blocks, the target sub blocks corresponding to a present decoding iteration among the plurality of decoding iterations, in a decoding schedule, estimating a reliability of each of the target sub blocks, based on a result of the node operation of each of the target sub blocks, and adjusting the decoding schedule, based on the reliability of each of the target sub blocks.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: April 14, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myung-Kyu Lee, Jae-Hong Kim, Ki-Jun Lee, Jun-Jin Kong, Hong-Rak Son, Se-Jin Lim, Young-Jun Hwang
  • Patent number: 10607708
    Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.
    Type: Grant
    Filed: August 13, 2019
    Date of Patent: March 31, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Chu Oh, Pilsang Yoon, Jun Jin Kong, Jisu Kim, Hong Rak Son, Jinbae Bang, Daeseok Byeon, Taehyun Song, Dongjin Shin, Dongsup Jin
  • Patent number: 10566066
    Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: February 18, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hye-Jeong So, Dong-Hwan Lee, Seong-Hyeog Choi, Eun-Chu Oh, Jun-Jin Kong, Hong-Rak Son, Pil-Sang Yoon
  • Publication number: 20200050513
    Abstract: An operating method of a memory controller that individually controls a plurality of memory units includes reading respective segments from the plurality of memory units based on a plurality of control signals; generating an output codeword based on the segments; performing error correction decoding on the output codeword; when a result of the error correction decoding indicates success, updating at least one of a plurality of accumulated error pattern information respectively corresponding to the plurality of memory units based on the result of the error correction decoding; and when the result of the error correction decoding indicates failure, regulating at least one of the plurality of control signals based on at least one of the plurality of accumulated error pattern information.
    Type: Application
    Filed: March 19, 2019
    Publication date: February 13, 2020
    Inventors: MINUK KIM, BOHWAN JUN, HONG RAK SON, DONG-MIN SHIN, KIJUN LEE
  • Publication number: 20200042385
    Abstract: An error correcting circuit receives a codeword including user data and a parity code, and performs an error correction operation on the user data. The circuit includes a first buffer, a decoder, a second buffer and a processor. The first buffer stores the codeword and sequentially outputs pieces of subgroup data obtained by dividing the codeword. The decoder generates pieces of integrity data for each of the pieces of subgroup data received from the first buffer, and performs the error correction operation on the user data using the parity code. The second buffer sequentially stores the pieces of integrity data for each of the pieces of subgroup data. The processor determines whether an error is present in the codeword based on the pieces of integrity data stored in the second buffer when at least one of the pieces of integrity data is updated in the second buffer.
    Type: Application
    Filed: June 18, 2019
    Publication date: February 6, 2020
    Inventors: YOUNG-JUN HWANG, MYUNG-KYU LEE, HONG-RAK SON, GEUN-YEONG YU, Ki-JUN LEE
  • Publication number: 20190362794
    Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.
    Type: Application
    Filed: August 13, 2019
    Publication date: November 28, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Eun Chu OH, Pilsang Yoon, Jun Jin Kong, Jisu Kim, Hong Rak Son, Jinbae Bang, Daeseok Byeon, Taehyun Song, Dongjin Shin, Dongsup Jin
  • Patent number: 10467133
    Abstract: A storage device is provided as follows. A nonvolatile memory device includes blocks, each block having sub-blocks erased independently. A memory controller performs a garbage collection operation on the nonvolatile memory device by selecting a garbage collection victim sub-block among the sub-blocks and erasing the selected garbage collection victim sub-block to generate a free sub-block. The memory controller selects the garbage collection victim sub-block using valid page information of each sub-block and valid page information of memory cells adjacent to each sub-block.
    Type: Grant
    Filed: March 8, 2016
    Date of Patent: November 5, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Amitai Perlstein, Eun Chu Oh, Amir Bennatan, Junjin Kong, Hong Rak Son
  • Patent number: 10459788
    Abstract: A method of decoding may include performing fewer than ? 2 k - 1 k ? number of sensing operations of multilevel cells within a nonvolatile memory device, decoding pages corresponding to each of the sensing operations while correcting a channel error using an RIO code, and extracting user data from the decoded pages.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: October 29, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Donghwan Lee, Sae-Young Chung, Lanying Zhao, Sungik Choi, Junjin Kong, Changkyu Seol, Hyejeong So, Hong Rak Son
  • Patent number: 10438684
    Abstract: A method of operating a memory system, having a non-volatile memory device, includes processing a response to a first request toward the memory device by using an original key, in response to the first request, generating and storing first parity data corresponding to the original key, and deleting the original key.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: October 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seong-Hyeog Choi, Jun-Jin Kong, Hong-Rak Son, Pil-Sang Yoon, Chang-Kyu Seol, Ki-Jun Lee
  • Publication number: 20190287643
    Abstract: A method of setting a read voltage by a memory controller and a storage device are provided. The method includes controlling a memory device to read data from memory cells by applying a test read voltage to a selected word line; receiving, from the memory device, cell count information corresponding to a read operation of the memory device, and renewing the test read voltage by using the cell count information and a cost function to find an optimum read voltage, the cost function being determined for each read voltage level; and determining a read voltage by performing the controlling of the memory device and the renewing of the test read voltage at least once.
    Type: Application
    Filed: March 12, 2019
    Publication date: September 19, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-hoon KIM, Jun-jin KONG, Hong-rak SON, Pil-sang YOON
  • Publication number: 20190279731
    Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
    Type: Application
    Filed: May 23, 2019
    Publication date: September 12, 2019
    Inventors: HYE-JEONG SO, DONG-HWAN LEE, SEONG-HYEOG CHOI, EUN-CHU OH, JUN-JIN KONG, HONG-RAK SON, PIL-SANG YOON
  • Patent number: 10381090
    Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: August 13, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Chu Oh, Pilsang Yoon, Jun Jin Kong, Jisu Kim, Hong Rak Son, Jinbae Bang, Daeseok Byeon, Taehyun Song, Dongjin Shin, Dongsup Jin
  • Patent number: 10374630
    Abstract: A low-density parity check (LDPC) decoder may include a variable node processing unit and a check node processing unit. The check node processing unit includes memory elements storing a check node value. The memory elements are interconnected through two or more paths, and each of the paths may include a total or partial cyclic permutation of the memory elements to transmit the check node value.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: August 6, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jiyoup Kim, Dong-Min Shin, Beomkyu Shin, Junjin Kong, Hong Rak Son
  • Patent number: 10332606
    Abstract: A method of operating a memory controller includes classifying a plurality of memory cells in an erase state into a plurality of groups, based on erase state information about the plurality of memory cells in the erase state; setting at least one target program state for at least some memory cells from among memory cells included in at least one of the plurality of groups; and programming the at least some memory cells for which the at least one target program state has been set, to a program state other than the at least one target program state from among the plurality of program states.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: June 25, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hye-Jeong So, Dong-Hwan Lee, Seong-Hyeog Choi, Eun-Chu Oh, Jun-Jin Kong, Hong-Rak Son, Pil-Sang Yoon
  • Publication number: 20190190539
    Abstract: An error correction device includes a low density parity check (LDPC) decoder and an adaptive decoding controller. The LDPC decoder iteratively performs LDPC decoding on data by using a decoding parameter. The adaptive decoding controller calculates an error rate depending on a result of the LDPC decoding and adjusts the decoding parameter depending on the error rate.
    Type: Application
    Filed: August 10, 2018
    Publication date: June 20, 2019
    Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: KYEONGCHEOL YANG, SUNGHYE CHO, YOUNGJUN HWANG, JUNJIN KONG, HONG RAK SON, DONG-MIN SHIN, KIJUN LEE
  • Publication number: 20190188078
    Abstract: A method of operating a memory controller that performs decoding by using a parity check matrix corresponding to a convolution-type low density parity check (LDPC) code includes receiving a codeword from at least one memory device, the codeword including a first sub-codeword and a second sub-codeword; decoding a first sub-codeword into first data by using first sliding windows in a first direction, set based on a first sub-matrix included in the parity check matrix and associated with the first sub-codeword; and decoding a second sub-codeword into second data by using second sliding windows in a second direction, set based on a second sub-matrix included in the parity check matrix and associated with the second sub-codeword.
    Type: Application
    Filed: August 8, 2018
    Publication date: June 20, 2019
    Inventors: GEUNYEONG YU, BOHWAN JUN, KIJUN LEE, JUNJIN KONG, HONG-RAK SON
  • Patent number: 10324785
    Abstract: A decoder includes a channel mapper configured to generate a plurality of channel reception values based on hard decision information and soft decision information, a strong error detector configured to determine whether a strong error has occurred using a plurality of check node messages and the channel reception values and to correct the channel reception values according to a determination result to produce corrected channel reception values, a variable node unit configured to generate a plurality of variable node messages using the check node messages and the corrected channel reception values, and a check node unit configured to generate the check node messages using the variable node messages. The variable node unit includes a plurality of variable nodes and the check node unit includes a plurality of check nodes.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: June 18, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Rae Kim, Gyu Yeol Kong, Ki Jun Lee, Jun Jin Kong, Hong Rak Son, Beom Kyu Shin, Heon Hwa Cheong
  • Publication number: 20190158116
    Abstract: A method of decoding a low density parity check (LDPC) code, includes dividing a parity check matrix of the LDPC code, into a plurality of sub blocks. The method further includes, for each of a plurality of decoding iterations, performing a node operation of each of target sub blocks among the plurality of sub blocks, the target sub blocks corresponding to a present decoding iteration among the plurality of decoding iterations, in a decoding schedule, estimating a reliability of each of the target sub blocks, based on a result of the node operation of each of the target sub blocks, and adjusting the decoding schedule, based on the reliability of each of the target sub blocks.
    Type: Application
    Filed: June 29, 2018
    Publication date: May 23, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myung-Kyu LEE, Jae-Hong KIM, Ki-Jun LEE, Jun-Jin KONG, Hong-Rak SON, Se-Jin LIM, Young-Jun HWANG
  • Publication number: 20190140665
    Abstract: A polar code encoding and decoding method includes generating a first and second sub-codewords. The sub-codewords correspond to pre-codewords, and the pre-codewords have a shared data aspect. The sub-codewords provide useful error-recovery for data stored in a memory. When data is read from the memory, decoding takes place. The data read operation may include hard decision decoding, soft decision decoding, or hard decision decoding followed by soft decision decoding. In the method, the shared data aspect is used to decode a first sub-codeword for which decoding was not initially successful. An apparatus is also provided.
    Type: Application
    Filed: June 20, 2018
    Publication date: May 9, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-Min SHIN, Min Uk KIM, Ki Jun LEE, Jun Jin KONG, Hong Rak SON