Abstract: Systems and methods are described for merging customer profiles, such as may be implemented by a computer-implemented contact center service. In some aspects, a subset of profiles may be determined that satisfy merging criteria, where individual profiles include a plurality of data fields. At least one value in a first data field that conflicts between at least two profiles may be identified. Next a merged value may be selected for the first data field based on data deduplication criteria, where the data deduplication criteria includes at least one indicator of accuracy of values of the plurality of data fields. As a result of a determination that at least the subset of profiles of the group of profiles meet the merging criteria, at least the subset of profiles may be combined into a combined profile using the merged value.

Abstract: A hydrogel for cell-laden bioprinting, bioink, and a preparation method and an application thereof, relates to the technical field of biomedical polymer hydrogels. The hydrogel for cell-laden bioprinting is polymer gel formed by adding a cell-specific material into a matrix of alginate and gelatin and crosslinking and curing, wherein the cell-specific material is polypeptide selected according to different laden cells. The structures printed using the hydrogel may have the advantages such as adjustable mechanical properties, adjustable porosity, high biocompatibility, high printing accuracy, and high customizability, which may widely support the printing of human tissues and organs such as spinal cord, cartilage, and heart, and has good prospects for applications in tissue repair, organ transplantation and so on.

Abstract: Disclosed herein are memory device, method for program operations. In an aspect, a memory device comprises a memory configured to store a program code and a processor. The processor is configured to perform a first programming to a first cell of the memory device by incremental step pulse programming (ISPP) with a first step voltage. The processor is further configured to perform a second programming to a second cell of the memory device by ISPP with a second step voltage. The first step voltage is larger than the second step voltage. The first cell corresponds to a first target voltage and the second cell corresponds to a second target voltage. The first cell corresponds to a first target voltage and the second cell corresponds to a second target voltage.

Abstract: A memory device includes a memory array including a cell, and a controller coupled to the memory array. The controller is configured to control sequentially applying programming voltage pulses to the cell. A pulse width of each of the programming voltage pulses decreases as a pulse count of the programming voltage pulses increases.

Abstract: This disclosure provides a device identity authentication method and apparatus, an electronic device, and a computer-readable medium. The device identity authentication method includes generating, by a terminal device, a first identity authentication message in response to an identity authentication instruction; sending the first identity authentication message to the second device for the second device to authenticate an identity of the terminal device based on the first identity authentication message to obtain a first identity authentication result; receiving, by the terminal device, a second identity authentication message; wherein the second identity authentication message is a message sent by the second device when the first identity authentication result is passed; authenticating an identity of the second device based on the second identity authentication message to obtain a second identity authentication result.

Abstract: Provided are an overhead line detection method and system based on a cable inspection robot. The cable inspection robot is suspended on the overhead line. An imaging unit and a laser emission unit are disposed at the front end of the cable inspection robot. The imaging unit is at a first angle to the overhead line. The laser emission unit is at a second angle to the overhead line.

Abstract: An alumina-based ceramic tool material with low thermal expansion and a preparation process thereof, accordingly, the ceramic tool material may have both the high hardness of alumina ceramics after the hot pressing sintering, and reduces the thermal expansion coefficient of the overall ceramic material by adding the Sc2W3O12 as the negative thermal expansion phase, which improves the thermal shock resistance of ceramic tools in high-speed cutting engineering and meets the requirements of large temperature range during the machining of nickel-based superalloys. Moreover, the composite material does not use metal binder and has strong thermal stability even in the high-speed machining under extreme heat-force-chemistry coupling, so it has a high machining compatibility for nickel-based superalloys.

Abstract: A high-efficiency and short-process method for preparing a high-strength and high-conductivity copper alloy is disclosed, comprising the following steps: performing horizontal continuous casting to obtain an as-cast primary billet of copper alloy, wherein the alloying elements in the obtained as-cast primary billet being in a supersaturated solid solution state; after peeling the obtained as-cast primary billet, directly performing continuous extrusion, cold working and aging annealing treatment to obtain a copper alloy, and keeping the alloying elements of the billet in a supersaturated solid solution state during the process of continuous extrusion. The method shortens the flow, reduces energy consumption and improves the product forming rate.

Abstract: A digital and informationized fully-automatic aluminum thermal-spraying production line includes: an automatic feeding system including first transfer mechanisms and first carrying conveying mechanisms; a laser cleaning system including a laser cleaning tank, laser cleaning nozzles and cleaning conveying mechanisms; a first transfer system including second carrying conveying mechanisms and second transfer mechanisms; an aluminum thermal-spraying system including traveling mechanisms, turning mechanisms and an aluminum spraying mechanism, the traveling mechanisms being configured to convey workpieces on the second carrying conveying mechanisms onto the turning mechanisms one-by-one, the turning mechanisms being configured to turn the workpieces by a preset angle, and the aluminum spraying mechanism being configured to perform aluminum arc-spraying on the workpieces.

Abstract: Provided are an overhead line detection method and system based on a cable inspection robot. The cable inspection robot is suspended on the overhead line. An imaging unit and a laser emission unit are disposed at the front end of the cable inspection robot. The imaging unit is at a first angle to the overhead line. The laser emission unit is at a second angle to the overhead line.

Abstract: This disclosure provides a memory device, a memory system, and an operation method. The memory device includes a memory array having a plurality of memory blocks and a control circuit coupled to the memory array and used to control the memory array. The control circuit is configured to determine a first average value of threshold voltages of bottom dummy cells in an unused memory block, determine a difference value between the first average value and a first reference value, and judge based on the difference value when bottom dummy cells in the memory block are to be programmed so that the first average value reaches a first threshold.

Abstract: A memory includes wordline (WL) layers and a controller coupled to the WL layers. The controller is configured to apply at least one verify voltage to a first WL layer of the WL layers during a verify phase, and apply a first pass voltage to a second WL layer of the WL layers during the verify phase. A first memory cell of the first WL layer is programmed before a second memory cell of the second WL layer. The first pass voltage is higher than a threshold voltage of a memory cell in a lowest programming state.

Abstract: A memory device includes a memory string and a control circuit coupled to the memory string. The memory string includes a top select gate, word lines, and a bottom select gate. The control circuit is configured to, in an erasing operation, apply an erasing voltage to the memory string, apply a verifying voltage to at least one word line of the word lines after applying the erasing voltage to the memory string, and apply a first turn-on voltage to the bottom select gate, before applying the verifying voltage to the at least one word line.

Abstract: An operation method for a 3D NAND flash including a plurality of wordline (WL) layers. The operation method includes: writing data into a WLn layer of the plurality of WL layers according to a writing sequence from a first end of the plurality of WL layers to a second end of the plurality of WL layers in a write operation, wherein the WLn layer is a selected WL layer; and applying a first pass voltage on a first WL layer of the plurality of WL layers and applying a second pass voltage on a second WL layer of the plurality of WL layers during a verify phase; wherein the operation method is operated without a pre-pulse phase during or before the verify phase.

Abstract: When programming and verifying a memory device which includes a plurality of memory cells and a plurality of word lines, a first coarse programming is first performed on a first memory cell among the plurality of memory cells which is controlled by a first word line among the plurality of word lines, and then a second coarse programming is performed on a second memory cell among the plurality of memory cells which is controlled by a second word line among the plurality of word lines. Next, a first coarse verify current is used for determining whether the first memory cell passes a coarse verification and a second coarse verify current is used for determining whether the second memory cell passes a second coarse verification, wherein the second coarse verify current is smaller than the first coarse verify current.

Abstract: When programming and verifying a memory device which includes a plurality of memory cells and a plurality of word lines, a first coarse programming is first performed on a first memory cell among the plurality of memory cells which is controlled by a first word line among the plurality of word lines, and then a second coarse programming is performed on a second memory cell among the plurality of memory cells which is controlled by a second word line among the plurality of word lines. Next, a first coarse verify current is used for determining whether the first memory cell passes a coarse verification and a second coarse verify current is used for determining whether the second memory cell passes a second coarse verification, wherein the second coarse verify current is smaller than the first coarse verify current.

Abstract: A memory device includes a memory string and a control circuit coupled to the memory string. The memory string includes a top select gate, word lines, a bottom select gate, and a P-well. The control circuit is configured to, in an erasing operation, apply an erasing voltage to the P-well, apply a verifying voltage to a selected word line of the word lines after applying the erasing voltage to the P-well, and apply a first turn-on voltage to the bottom select gate, starting after applying the erasing voltage to the P-well and before applying the verifying voltage to the selected word line.

Abstract: Upon determining that a first read operation on one memory cell of a plurality of memory cells has failed, a second read operation on the memory cell is started. In the second read operation, a second pass voltage is applied to first unselected word lines, and a first pass voltage is applied to second unselected word lines. The first unselected word lines include one or more word lines adjacent to a selected word line, and the second unselected word lines include remaining unselected word lines. The selected word line corresponds to the memory cell to be read. The first pass voltage includes a voltage applied to the first unselected word lines in the first read operation. The second pass voltage is higher than the first pass voltage.

Abstract: A memory device includes a memory cell array and peripheral circuits. The memory cell array may include one or more first memory cells configured to store first type data, and one or more second memory cells configured to store second type data. The peripheral circuits may be coupled to the memory cell array and configured to perform a first program operation on the one or more first memory cells, perform the first program operation on the one or more second memory cells, and perform a second program operation on the one or more first memory cells. A first storage time corresponding to the first type data is longer than a second storage time corresponding to the second type data.

Abstract: The present disclosure provides a configuration method and a reading method for a 3D memory, a 3D memory and system. The configuration method includes: writing test data into a plurality of selected memory cells corresponding to a selected word line in one of a plurality of memory blocks of the memory device; determining threshold voltages of the plurality of selected memory cells; and obtaining a relationship table indicating a corresponding relationship between a number of a subset of the selected memory cells that have threshold voltages lower than a preset voltage and a pass voltage required for performing a read operation on the one memory block.