Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: A method and apparatus for adjusting a display includes receiving a video stream. The video stream is analyzed for one or more environmental conditions. Based upon the analysis, a portion of the display is adjusted.

Abstract: In an embodiment, a computer-implemented method comprises deploying a dual-active database on a first active database site and a second active database site. The first active database site comprises a first group of disks including a first sub-group of disks and a second sub-group of disks respectively corresponding to a third sub-group of disks and a fourth sub-group of disks included in a second group of disks in the second active database site. The method further comprises storing a first set of database logs on the first sub-group of disks while a second set of database logs is being written on the second sub-group of disks. Contents of the second set of database logs are consistent with contents of the first set of database logs and function as a duplication of the first set of database logs.

Abstract: Semiconductor structures and fabrication methods are provided. The semiconductor structure includes a semiconductor substrate having a dielectric structure and having at least a first region; a plurality of first openings formed in the dielectric structure in the first region; a first barrier member formed in each of the plurality of the first openings; a plurality of second openings formed between adjacent first barrier members and with sidewall surfaces exposing sidewall surfaces of the first barrier members; and a second barrier member formed in each of the plurality second openings.

Abstract: An example apparatus to retain a computer power brick in a power brick holder includes a plate and a positioning mechanism removably attached at any of a plurality of positions on the plate. The positioning mechanism is attached at a preset position on the plate based on a size of the power brick.

Abstract: A device includes a transceiver, a receiver, and a processor. The transceiver is configured to receive feedback data from an unmanned aerial vehicle (UAV) and transmit control data to the UAV via a first communication link. The receiver is configured to receive the control data from a controlling terminal via a second communication link. The second communication link does not interfere with the first communication link. The processor is configured to determine whether the feedback data and the control data are being simultaneously transmitted via the first communication link.

Abstract: A method and system for predicting a response time for a workload prior to making a hardware upgrade to a computing system. Data related to operation of the system is collected. Then a workload model of a plurality of workloads and CPU utilization for the plurality of workloads and a transaction model for each transaction within a workload of the plurality of workloads are built. Next the process determines that a characteristic of at least one workload in the plurality of workloads will change due to the hardware upgrade. As a result of the change, a new workload model for the changed workload is built based on the changed characteristic, and the response time for the workload based on the new workload model is calculated.

Abstract: Disclosed are an oxide semiconductor material, a thin-film transistor and a manufacturing method thereof, and a display panel. The oxide semiconductor material includes: a complex oxide (In2O3)a(MO)b composed of an oxide of indium In2O3 and an oxide of a fifth subgroup element MO, where a+b=1, and 0.10?b?0.50.

Abstract: Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus.

Abstract: A monitoring terminal includes a transceiver, a receiver, and a processor. The transceiver provides a two-way communication with an unmanned aerial vehicle (UAV) via a first communication link and is configured to receive feedback data and a feedback data indication from the UAV and transmit control data to the UAV. The receiver is configured to receive the control data and a control data indication from a controlling terminal via a second communication link. The second communication link does not interfere with the first communication link. The processor is configured to determine whether the feedback data and the control data are being simultaneously transmitted via the first communication link based on the feedback data indication and the control data indication.

Abstract: A method is for processing a cooling hole on a workpiece with laser. The cooling hole includes a shaped hole section. The method includes emitting a first laser pulse to a rough processing part in the position of the shaped hole section to be processed on the workpiece according to the geometrical parameters of the shaped hole section so as to remove the material of the workpiece; and emitting a second laser pulse to the processing allowance part beyond the rough processing part of the shaped hole section to be processed according to the geometrical parameters of the shaped hole section so as to remove the material allowance of the workpiece on the processing allowance part. The energy of the first laser pulse is relatively larger than that of the second laser pulse.

Abstract: Various embodiments of a system and method for landing an unmanned aerial vehicle are described herein. The system includes at least one memory and at least one processor, wherein the at least one memory is operatively coupled to the at least one processor; the at least one processor being configured to control landing of the unmanned aerial vehicle by executing the modified PPN guidance law algorithm, wherein the modified PPN guidance law algorithm comprises: determining a current position for the unmanned aerial vehicle; determining a distance of the current position from a target position; generating at least one velocity command from the determined distance, the velocity command reducing to zero as the distance reduces to zero; and controlling the unmanned aerial vehicle to maintain the velocity thereof at the velocity command, whereby as the unmanned aerial vehicle approaches the target destination, the velocity of the aerial vehicle reduces to zero.

Abstract: Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a method for operating a 3D memory device is disclosed. The 3D memory device includes a plurality of memory decks each including a plurality of memory layers in a vertical direction, and a plurality of first dummy memory layers between the first and second memory decks in the vertical direction. Each memory layer in a first memory deck of the plurality of memory decks is first programmed. The first programming includes applying a program voltage to the memory layer and a channel pass voltage smaller than the program voltage to each of the rest of the memory layers in the first memory deck. Each memory layer in a second memory deck of the plurality of memory decks above the first memory deck is second programmed. The second programming includes applying the program voltage to the memory layer and the channel pass voltage to each of the rest of the memory layers in the second memory deck.

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R? into an indium-containing MO semiconductor to form an InxMyRnR?mOz semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a method for operating a 3D memory device is disclosed. The 3D memory device includes a plurality of memory decks each including a plurality of memory layers in a vertical direction, and a plurality of first dummy memory layers between the first and second memory decks in the vertical direction. Each memory layer in a first memory deck of the plurality of memory decks is first programmed. The first programming includes applying a program voltage to the memory layer and a channel pass voltage smaller than the program voltage to each of the rest of the memory layers in the first memory deck. Each memory layer in a second memory deck of the plurality of memory decks above the first memory deck is second programmed. The second programming includes applying the program voltage to the memory layer and the channel pass voltage to each of the rest of the memory layers in the second memory deck.

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Abstract: The present disclosure relates to an N-(substituted naphthyl-ethyl) substituted amide compound and uses thereof serving as a melatonin receptor agonist and 5-HT2C receptor antagonist, and specifically relates to the compound of formula (I) or a pharmaceutically acceptable salt thereof, a solvate or a mixture of them, and a pharmaceutical composition, where X, R1, and R2 are as defined in the present text.

Abstract: Systems, methods, and computer-readable media are described for implementing an active-active transaction protocol according to which multiple sites can each provide active services such as executing update transactions that insert, modify, or delete data records. An active-active transaction protocol utilizes affinity records corresponding to both transactions that have been received as well as the data records those transactions are updating to determine which site should handle execution of an incoming update transaction. An affinity record defines a relationship between a data record and a site that determines whether and where a transaction seeking to update that data record will be routed for processing. Conflict handling mechanisms are also provided by the active-active transaction protocol to ensure data consistency between the multiple sites.

Abstract: Semiconductor structures and fabrication methods are provided. The semiconductor structure includes a semiconductor substrate having a dielectric structure and having at least a first region; a plurality of first openings formed in the dielectric structure in the first region; a first barrier member formed in each of the plurality of the first openings; a plurality of second openings formed between adjacent first barrier members and with sidewall surfaces exposing sidewall surfaces of the first barrier members; and a second barrier member formed in each of the plurality second openings.

Abstract: Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a method for operating a 3D memory device is disclosed. The 3D memory device includes memory decks each including memory layers in a vertical direction. Each memory layer in a first memory deck is first programmed. The first programming includes applying a program voltage to the memory layer and a first channel pass voltage smaller than the program voltage to each rest of the memory layers. Each memory layer in a second memory deck above the first memory deck is second programmed. The second programming includes applying the program voltage to the memory layer and the first channel pass voltage to each rest of the memory layers. The second programming further includes applying a second channel pass voltage smaller than the first channel pass voltage to each memory layer in the first memory deck.