Abstract: The present invention provides a liquid crystal display (“LCD”), a method of manufacturing the same, and a method of repairing the same capable of obtaining a wide viewing angle and improving a success ratio of repair. The LCD includes a gate line, a first data line intersecting the gate line, a thin film transistor (“TFT”) connected with the gate line and the first data line, a pixel electrode connected with the TFT, a first conductive pattern partially overlapping with a first end of the pixel electrode, a second conductive pattern partially overlapping with a second end of the pixel electrode, and a storage capacitor, wherein at least one of the first conductive pattern and the second conductive pattern partially overlaps with the first data line adjacent to the first end of the pixel electrode and a second data line adjacent to the second end of the pixel electrode, respectively.

Abstract: A gate driving circuit includes stages connected in series. In a stage, a pull-up part pulls up a present gate signal to a level of a first clock signal, and a pull-down part receives a next gate signal from a next stage to discharge the present gate signal to an off-voltage. A pull-up driving part turns on or turns off the pull-up part and the carry part. A holding part holds the present gate signal at the off-voltage and a present inverter turns on or turns off the holding part in response to the first clock signal. A ripple preventing capacitor is connected between a present node and an output terminal of a previous stage's inverter to prevent a ripple at the present Q-node in response to an output signal from the previous inverter.

Abstract: A gate driving circuit and a display apparatus having the gate driving circuit include a pull-up part and a carry part pull up a present gate signal and a present carry signal, respectively, to a first clock during a first period within one frame. A pull-down part receives a next gate signal to discharge the present gate signal to a source power voltage. A pull-up driving part is connected to control terminals of the carry part and pull-up part (Q-node) to turn the carry part and pull-up part on and off. A floating preventing part prevents an output terminal of the carry part from being floated in response to the first clock during a second period within the one frame.

Abstract: A liquid crystal display that is subject to pixel-high defects due to manufacturing anomalies is provided with programmable repair means for each pixel electrode. In one embodiment, a transistor-array substrate is provided with plural gate lines that are separated from each other by a first interval, plural data lines that are insulated from the gate lines while crossing the gate lines, and separated from each other by a second interval larger than the first interval, thereby defining plural pixel areas. Each pixel area has a corresponding pixel unit comprising a switching device, pixel electrode, and repair electrode. The repair electrode branches from a neighboring gate line and extends such that the repair electrode is in overlapping spaced-apart relation with the pixel electrode and selectively connectable to the pixel electrode.

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Abstract: A shift register includes a plurality of stages connected to one another to sequentially generate output signals. Each of the stages has a plurality of output terminals, and each of the output terminals is connected to at least two gate lines and outputs a first output voltage alternately to the at least two gate lines to turn on thin film transistors.

Abstract: Disclosed herein is a paroxetine cholate or cholic acid derivative salt and a composition comprising paroxetine and cholic acid or a derivative thereof. Further disclosed is a pharmaceutical composition comprising the paroxetine salt or the composition. The pharmaceutical composition can be formulated into an oral preparation for swallowing without water as an orally disintegrating tablet for paroxetine.

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection distribution of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract: Disclosed herein is an apparatus and method for performing radio frequency calibration in a mobile phone. The apparatus includes a process control Personal Computer (PC), a base station controller simulator, a switching jig, and a Level Translator (LT). The process control PC performs the overall control of the apparatus for performing RF calibration. The base station controller simulator transmits the RF signals. The switching jig is connected between first and second wireless paths of the diversity mobile communication terminal and the base station controller simulator and is configured to selectively connect the first wireless path and the second wireless path to the base station controller simulator under the control of the process control PC. The LT keeps voltage, which is applied to the diversity mobile communication terminal, constant under the control of the process control PC.

Abstract: Disclosed herein is a method of controlling power consumption of a mobile communication terminal, and a mobile communication terminal in which the method is implemented. The mobile communication terminal, having peripheral devices, such as a speaker, Liquid Crystal Display (LCD) and a camera, and a diversity unit for implementing a diversity function, includes a power measurement unit and a control unit. The power measurement unit measures power consumed in the diversity unit. The control unit controls the power consumption of the peripheral devices based on the amount of consumed power read from the power measurement unit. Accordingly, the power consumption of the peripheral devices is appropriately controlled, so that unnecessary power consumption can be reduced, therefore the lifespan of a battery can be prolonged.

Abstract: The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.

Abstract: Disclosed herein is a diversity method for activating or deactivating a diversity function depending on the amount of power remaining in a power supply device and a mobile communication terminal incorporating the same. In an embodiment of the present invention, when the amount of power remaining in a power supply device is smaller than a reference value for the activation of a transmission/reception diversity function, which has been previously stored in memory, the transmission/reception diversity function is deactivated, and when the amount of power remaining in a power supply device is equal to or larger than the reference value, the transmission/reception diversity function is activated. In another embodiment, when the amount of power remaining in a power supply device is smaller than a reference value for the activation of a transmission or reception diversity function, which has been previously stored in memory, the transmission or reception diversity function is deactivated.

Abstract: Disclosed herein are a method and apparatus for acquiring a code group in an asynchronous Wideband Code Division Multiple Access (WCDMA) system. A primary synchronization channel search unit achieves primary synchronization channel slot timing synchronization. Then, the 1-1 search unit and 1-2 search unit of a secondary synchronization channel receive secondary synchronization channels from first and second antennas, respectively, start correlation operations between some of the slots of the received channels and code group candidates, and transmit information about candidates having values exceeding a predetermined threshold value to a determination unit. The determination unit transmits the received information about candidates to a second search unit of the secondary synchronization channel.

Abstract: A display substrate comprises a base substrate divided into a display region and a peripheral region surrounding the display region, wherein an image is displayed in the display region, a pixel part formed in the display region of the base substrate, a first color filter layer formed on the base substrate including the pixel part, wherein the first color filter layer is formed in the display region, and a second color filter layer formed in the peripheral region of the base substrate.

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: The present invention relates to a thiazolidinedione derivative, represented in formula (1) below, pharmaceutically acceptable salts thereof, and/or pharmaceutically acceptable solvates thereof. Further, the present invention provides a pharmaceutical composition comprising the compound represented in formula (1) below, wherein: X represents a carbon or nitrogen atom, Y represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen, or an aryl group, Z represents an oxygen, nitrogen, or sulfur atom, and R1 and R2 each represent a hydrogen atom; or R1 and R2 together form a bond.

Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Abstract: The present invention relates to a thiazolidinedione derivative, represented in formula (1) below, pharmaceutically acceptable salts thereof, and/or pharmaceutically acceptable solvates thereof.

Abstract: An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.