Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.

Abstract: The present invention relates to carbapenem derivatives of Formula I, wherein X is carbonyl or sulfonyl, and a preparation method thereof. The carbapenem derivatives of the invention have excellent antibacterial properties and are thus useful as antibiotics.

Abstract: In vibration attenuating apparatus and method for use on damper springs of a clutch disc, the clutch disc includes clutch plates, a clutch hub splinedly connected to a clutch shaft, frictional facings mounted on front and rear surfaces of the clutch plates, and damper springs mounted on the clutch plates. The apparatus further includes variable damping means inserted into each damper spring. The variable damping means controls a damping coefficient of the damper springs in accordance with an intensity of an electric current provided by an electronic control unit in order to prevent the transmission of abnormal vibration of an engine to a transmission unit.

Abstract: A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: The present invention relates to a single crystalline silicon ingot by Czochralski method and, more particularly, to a single crystalline silicon ingot, a wafer and a method of producing a single crystalline silicon ingot in which an oxidation-induced stacking fault ring is distributed widely and which has an agglomerated vacancy point defect area of low density wherein DSOD exists only, without FPD. Accordingly, an oxidation-induced stacking fault area having a micro-vacancy defect area of low density is distributed widely from the ingot edge to the ingot center in a single crystalline silicon ingot and a wafer fabricated by the present invention. As the micro-vacancy defect area has no FPD but may have DSOD, a coarsely agglomerated vacancy point defect area in which FPD and DSOD cohabit is shrunken or even eliminated. Therefore, the present invention improves the product quality as well as device yield.

Abstract: Compounds useful as angiogenesis inhibiting agents and processes for their preparation are disclosed. In one embodiment, the compounds of the invention are represented by Formula 1: ##STR1## Also disclosed is a pharmaceutical composition for inhibiting angiogenesis in a mammal, said composition comprising a compound of Formula 1, or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: An apparatus for generating a microwave frequency energy includes a cathode for emitting electrons, a first grid for controlling and focusing the flow of electrons from the cathode, a choke structure for serving as a capacitor, wherein the cathode, the first grid and the choke structure define an input cavity functioning as a resonant circuit.

Abstract: The present invention relates to a mercaptopyrrolidinyl derivative of the following formula ##STR1## suitable for the preparation of carbapenem compounds.

Abstract: The present invention relates to 2-(2-substituted pyrrolidin-4-yl)-thio-carbapenem derivatives and pharmaceutically acceptable salts thereof, to a process for preparing the derivatives, an intermediate compound for preparing the derivatives, an antibacterial composition containing the derivatives, and use of the derivatives as an antibacterial agent.