Patents by Inventor Hong Yang

Hong Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11784126
    Abstract: A semiconductor device includes: a first stack structure; a second stack structure; a slit insulating layer located between the first stack structure and the second stack structure, the slit insulating layer extending in a first direction; a conductive plug located between the first stack structure and the second stack structure, the conductive plug including a first protrusion part protruding to the inside of the slit insulating layer; and an insulating spacer surrounding a sidewall of the conductive plug.
    Type: Grant
    Filed: January 12, 2023
    Date of Patent: October 10, 2023
    Assignee: SK hynix Inc.
    Inventors: Ki Hong Lee, Ki Hong Yang, Yong Hyun Lim
  • Publication number: 20230309565
    Abstract: The present disclosure concerns methods of using novel bacterial strains of 0617-T307, 0917-T305, 0917-T306, 0917-T307, 0118-T319, 0318-T327, and 0418-T328, the cell broth and novel metabolites produced from the bacterial strains, to inhibit the growth of a variety of microbial species for bacterial pathogens that cause citrus Huanglongbing (citrus greening disease), Zebra chip (ZC) disease of potato, tomato, and other plants of the family Solanaceae and plants of the family Apiaceae and Umbelliferae.
    Type: Application
    Filed: March 13, 2023
    Publication date: October 5, 2023
    Inventors: Ching-Hong Yang, Jian Huang
  • Publication number: 20230312490
    Abstract: The present disclosure generally relates to compounds and pharmaceutical compositions that may be used in methods of treating cancer.
    Type: Application
    Filed: March 9, 2023
    Publication date: October 5, 2023
    Inventors: Hang Chu, Juan A. Guerrero, Anna E. Hurtley, Tae H. Hwang, Lan Jiang, Darryl Kato, Tetsuya Kobayashi, John E. Knox, Scott E. Lazerwith, Xiaofen Li, David W. Lin, Jonathan W. Medley, Michael L. Mitchell, Devan Naduthambi, Zachary Newby, Neil H. Squires, Vickie H. Tsui, Chandrasekar Venkataramani, William J. Watkins, Hong Yang
  • Publication number: 20230301318
    Abstract: The present invention is directed colloidal microcrystalline compositions, particularly for suspending particles in low viscosity fluids, produced by co-attrition of a mixture of microcrystalline cellulose and a first polysaccharide in the presence of acidic attrition aid and blending a second polysaccharide; their preparation; and, products made therewith.
    Type: Application
    Filed: December 8, 2022
    Publication date: September 28, 2023
    Inventors: HONG YANG, JOYCE MEI YAN TOH, JEREMY ONDOV, AARON VENABLES
  • Patent number: 11760567
    Abstract: A material loading device includes a loading frame and at least one first locking mechanism. The loading frame defines a receiving cavity and at least one opening communicating with the receiving cavity. Opposing inner walls of the loading frame define a plurality of first slots. The at least one first locking mechanism is disposed at the at least one opening. The at least one first locking mechanism includes a first locking portion extending downwards. The first locking portion includes a plurality of second slots and a plurality of blocks adjacent to the plurality of second slots. The first locking portion can drop by gravity, driving the plurality of blocks to move to and lock the plurality of first slots. The first locking portion can also be lifted, to drive the plurality of second slots to move to and unlock the plurality of first slots.
    Type: Grant
    Filed: June 2, 2022
    Date of Patent: September 19, 2023
    Assignee: TRIPLE WIN TECHNOLOGY(SHENZHEN) CO.LTD.
    Inventors: Wei-Wei Qi, Jin-Hong Li, Shi-Hong Yang
  • Publication number: 20230285472
    Abstract: The present invention relates to an antimicrobial composition and probiotics against bacterial and fungal pathogens of fish. In particular, the invention pertains to a novel strain of the bacterial species Pseudomonas chlororaphis subsp. aurantiaca 1214-CHY4 (ATCC accession number PTA-126941), the cells, cell broth, and novel metabolites produced from the bacterial strain that can inhibit the growth of a variety of fish pathogens.
    Type: Application
    Filed: March 13, 2023
    Publication date: September 14, 2023
    Inventors: Ching-Hong Yang, Jian Huang
  • Publication number: 20230290638
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate dielectric layer over a substrate. The method includes forming a work function metal layer over the gate dielectric layer. The method includes forming a glue layer over the work function metal layer. The glue layer is thinner than the gate dielectric layer. The method includes forming a gate electrode over the glue layer. The gate electrode includes fluorine. The method includes annealing the gate electrode. The fluorine diffuses from the gate electrode into the gate dielectric layer.
    Type: Application
    Filed: March 10, 2022
    Publication date: September 14, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Wei CHEN, Chih-Yu HSU, Cheng-Hong YANG, Jian-Hao CHEN, Kuo-Feng YU
  • Patent number: 11753580
    Abstract: An inverse emulsion composition comprising: one or more hydrophobic liquids having a boiling point at least about 100° C.; up to about 38% by weight of one or more acrylamide-(co)polymers; one or more emulsifier surfactants; and one or more inverting surfactants; wherein, when the composition is inverted in an aqueous solution, it provides an inverted solution having a filter ratio using a 1.2 micron filter (FR1.2) of about 1.5 or less.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: September 12, 2023
    Assignee: KEMIRA OYJ
    Inventors: Logan Jackson, Thomas J. Lynch, Ronald Robinson, Frances Fournier, Hong Yang, Sukhjit Aujla, Do Hoon Kim, Dennis Arun Alexis
  • Publication number: 20230278198
    Abstract: Various embodiments include a method for a robot to grab a 3D object. The method may include: determining a current position and attitude of a visual sensor of the robot relative to the 3D object; acquiring a grabbing template of the 3D object, the grabbing template comprising a specified grabbing position and attitude of the visual sensor relative to the 3D object; judging whether the grabbing template further comprises at least one reference grabbing position and attitude of the visual sensor relative to the 3D object, wherein the reference grabbing position and attitude is generated on the basis of the specified grabbing position and attitude; and based on a judgment result, using the grabbing template and the current position and attitude to generate a grabbing position and attitude of the robot.
    Type: Application
    Filed: July 29, 2020
    Publication date: September 7, 2023
    Applicant: Siemens Ltd., China
    Inventors: Hai Feng Wang, Hong Yang Zhang, Wei Yao
  • Publication number: 20230282516
    Abstract: A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a semiconductor substrate, an insulation structure, a first contact plug, and an interconnection structure. The semiconductor substrate has an upper surface. The insulation structure is over the upper surface of the semiconductor substrate. The first contact plug passes through the insulation structure and has a concave upper surface recessed from an upper surface of the insulation structure. The interconnection layer directly contacts the concave upper surface of the first contact plug.
    Type: Application
    Filed: March 7, 2022
    Publication date: September 7, 2023
    Inventor: ZIH-HONG YANG
  • Publication number: 20230282515
    Abstract: A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The method includes forming an insulation structure over a semiconductor substrate, the insulation structure defining a trench having a trench width. The method also includes forming a first conductive material layer in the trench and over an upper surface of the insulation structure, wherein a portion of the first conductive material layer over the upper surface of the insulation structure has a thickness of greater than half the trench width. The method further includes performing a planarization operation on the first conductive material layer to form a contact plug having a concave upper surface recessed from the upper surface of the insulation structure.
    Type: Application
    Filed: March 7, 2022
    Publication date: September 7, 2023
    Inventor: ZIH-HONG YANG
  • Publication number: 20230264573
    Abstract: Methods and system are provided for protection against a short-circuit while charging an electric vehicle. In one example, a system for controlling charging of a vehicle includes a charge coupler and an integrated protection control box (IPCB). The IPCB including a fuse device, at least one temperature sensor for monitoring a temperature of the fuse device, a cooling system for cooling the fuse device, and a charging interface connector coupled to the at least one temperature sensor.
    Type: Application
    Filed: January 23, 2023
    Publication date: August 24, 2023
    Inventors: David HEIN, Marc DAIGNEAULT, Hong YANG
  • Patent number: 11735484
    Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a first semiconductor stack and a second semiconductor stack over a substrate, wherein each of the first and second semiconductor stacks includes semiconductor layers stacked up and separated from each other; a dummy spacer between the first and second semiconductor stacks, wherein the dummy spacer contacts a first sidewall of each semiconductor layer of the first and second semiconductor stacks; and a gate structure wrapping a second sidewall, a top surface, and a bottom surface of each semiconductor layer of the first and second semiconductor stacks.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Yu Hsu, Jian-Hao Chen, Chia-Wei Chen, Shan-Mei Liao, Hui-Chi Chen, Cheng Hong Yang, Shih-Hao Lin, Kuo-Feng Yu, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20230257389
    Abstract: The present disclosure relates generally to certain tricyclic compounds, pharmaceutical compositions comprising said compounds, and methods of making said compounds and pharmaceutical compositions. The compounds of the disclosure are useful in treating or preventing human immunodeficiency virus (HIV) infection.
    Type: Application
    Filed: February 3, 2023
    Publication date: August 17, 2023
    Inventors: Hang Chu, Ana Z. Gonzalez Buenrostro, Hongyan Guo, Xiaochun Han, Anna E. Hurtley, Lan Jiang, Jiayao Li, David W. Lin, Michael L. Mitchell, Devan Naduthambi, Gregg M. Schwarzwalder, Suzanne M. Szewczyk, Matthew J. Von Bargen, Qiaoyin Wu, Hong Yang, Jennifer R. Zhang
  • Publication number: 20230260442
    Abstract: A display panel, a display device and a driving method. The display panel includes a display region and a peripheral region. The display region includes a subpixel unit array having a plurality of rows and a plurality of columns of subpixel units, and the peripheral region includes a gate drive circuit. The display region further includes a plurality of gate lines and a plurality of data lines. The gate drive circuit comprises a plurality of shift register units, and the plurality of gate lines are electrically connected with the plurality of shift register units. The gate drive circuit comprises two shift-register-unit scanning groups, in the shift-register-unit scanning groups, a (k+1)th shift register unit and a (k)th shift register unit form one shift register unit group.
    Type: Application
    Filed: April 20, 2023
    Publication date: August 17, 2023
    Inventors: Zhaohui MENG, Wei SUN, Wenchao HAN, Hong YANG, Lin CONG, Wenjun XIAO
  • Patent number: 11728374
    Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
    Type: Grant
    Filed: October 11, 2021
    Date of Patent: August 15, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hong-Yang Chen, Tian Sheng Lin, Yi-Cheng Chiu, Hung-Chou Lin, Yi-Min Chen, Kuo-Ming Wu, Chiu-Hua Chung
  • Patent number: 11728492
    Abstract: An atomically dispersed precursor (ADP) for preparing a non-platinum group metal electrocatalyst includes: sacrificial metal centers comprising a sacrificial metal selected from Cd and Zn; metal active sites comprising a transition metal; and first and second ligands linking the sacrificial metal centers and the metal active sites into a network. The ADP may be immobilized on a carbon support. The first and second ligands may comprise N-containing ligands of different carbon chain lengths. Alternatively, the first and second ligands may comprise N-containing ligands and O-containing ligands, respectively.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: August 15, 2023
    Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Hong Yang, Talha Al-Zoubi, Yu Zhou
  • Patent number: D998858
    Type: Grant
    Filed: November 16, 2022
    Date of Patent: September 12, 2023
    Inventor: Hong Yang
  • Patent number: D998866
    Type: Grant
    Filed: November 16, 2022
    Date of Patent: September 12, 2023
    Inventor: Hong Yang
  • Patent number: D1001216
    Type: Grant
    Filed: August 23, 2022
    Date of Patent: October 10, 2023
    Inventor: Hong Yang