Patents by Inventor Hong Yang

Hong Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11753580
    Abstract: An inverse emulsion composition comprising: one or more hydrophobic liquids having a boiling point at least about 100° C.; up to about 38% by weight of one or more acrylamide-(co)polymers; one or more emulsifier surfactants; and one or more inverting surfactants; wherein, when the composition is inverted in an aqueous solution, it provides an inverted solution having a filter ratio using a 1.2 micron filter (FR1.2) of about 1.5 or less.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: September 12, 2023
    Assignee: KEMIRA OYJ
    Inventors: Logan Jackson, Thomas J. Lynch, Ronald Robinson, Frances Fournier, Hong Yang, Sukhjit Aujla, Do Hoon Kim, Dennis Arun Alexis
  • Publication number: 20230278198
    Abstract: Various embodiments include a method for a robot to grab a 3D object. The method may include: determining a current position and attitude of a visual sensor of the robot relative to the 3D object; acquiring a grabbing template of the 3D object, the grabbing template comprising a specified grabbing position and attitude of the visual sensor relative to the 3D object; judging whether the grabbing template further comprises at least one reference grabbing position and attitude of the visual sensor relative to the 3D object, wherein the reference grabbing position and attitude is generated on the basis of the specified grabbing position and attitude; and based on a judgment result, using the grabbing template and the current position and attitude to generate a grabbing position and attitude of the robot.
    Type: Application
    Filed: July 29, 2020
    Publication date: September 7, 2023
    Applicant: Siemens Ltd., China
    Inventors: Hai Feng Wang, Hong Yang Zhang, Wei Yao
  • Publication number: 20230282516
    Abstract: A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a semiconductor substrate, an insulation structure, a first contact plug, and an interconnection structure. The semiconductor substrate has an upper surface. The insulation structure is over the upper surface of the semiconductor substrate. The first contact plug passes through the insulation structure and has a concave upper surface recessed from an upper surface of the insulation structure. The interconnection layer directly contacts the concave upper surface of the first contact plug.
    Type: Application
    Filed: March 7, 2022
    Publication date: September 7, 2023
    Inventor: ZIH-HONG YANG
  • Publication number: 20230282515
    Abstract: A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The method includes forming an insulation structure over a semiconductor substrate, the insulation structure defining a trench having a trench width. The method also includes forming a first conductive material layer in the trench and over an upper surface of the insulation structure, wherein a portion of the first conductive material layer over the upper surface of the insulation structure has a thickness of greater than half the trench width. The method further includes performing a planarization operation on the first conductive material layer to form a contact plug having a concave upper surface recessed from the upper surface of the insulation structure.
    Type: Application
    Filed: March 7, 2022
    Publication date: September 7, 2023
    Inventor: ZIH-HONG YANG
  • Publication number: 20230264573
    Abstract: Methods and system are provided for protection against a short-circuit while charging an electric vehicle. In one example, a system for controlling charging of a vehicle includes a charge coupler and an integrated protection control box (IPCB). The IPCB including a fuse device, at least one temperature sensor for monitoring a temperature of the fuse device, a cooling system for cooling the fuse device, and a charging interface connector coupled to the at least one temperature sensor.
    Type: Application
    Filed: January 23, 2023
    Publication date: August 24, 2023
    Inventors: David HEIN, Marc DAIGNEAULT, Hong YANG
  • Patent number: 11735484
    Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a first semiconductor stack and a second semiconductor stack over a substrate, wherein each of the first and second semiconductor stacks includes semiconductor layers stacked up and separated from each other; a dummy spacer between the first and second semiconductor stacks, wherein the dummy spacer contacts a first sidewall of each semiconductor layer of the first and second semiconductor stacks; and a gate structure wrapping a second sidewall, a top surface, and a bottom surface of each semiconductor layer of the first and second semiconductor stacks.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Yu Hsu, Jian-Hao Chen, Chia-Wei Chen, Shan-Mei Liao, Hui-Chi Chen, Cheng Hong Yang, Shih-Hao Lin, Kuo-Feng Yu, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20230257389
    Abstract: The present disclosure relates generally to certain tricyclic compounds, pharmaceutical compositions comprising said compounds, and methods of making said compounds and pharmaceutical compositions. The compounds of the disclosure are useful in treating or preventing human immunodeficiency virus (HIV) infection.
    Type: Application
    Filed: February 3, 2023
    Publication date: August 17, 2023
    Inventors: Hang Chu, Ana Z. Gonzalez Buenrostro, Hongyan Guo, Xiaochun Han, Anna E. Hurtley, Lan Jiang, Jiayao Li, David W. Lin, Michael L. Mitchell, Devan Naduthambi, Gregg M. Schwarzwalder, Suzanne M. Szewczyk, Matthew J. Von Bargen, Qiaoyin Wu, Hong Yang, Jennifer R. Zhang
  • Publication number: 20230260442
    Abstract: A display panel, a display device and a driving method. The display panel includes a display region and a peripheral region. The display region includes a subpixel unit array having a plurality of rows and a plurality of columns of subpixel units, and the peripheral region includes a gate drive circuit. The display region further includes a plurality of gate lines and a plurality of data lines. The gate drive circuit comprises a plurality of shift register units, and the plurality of gate lines are electrically connected with the plurality of shift register units. The gate drive circuit comprises two shift-register-unit scanning groups, in the shift-register-unit scanning groups, a (k+1)th shift register unit and a (k)th shift register unit form one shift register unit group.
    Type: Application
    Filed: April 20, 2023
    Publication date: August 17, 2023
    Inventors: Zhaohui MENG, Wei SUN, Wenchao HAN, Hong YANG, Lin CONG, Wenjun XIAO
  • Patent number: 11728374
    Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
    Type: Grant
    Filed: October 11, 2021
    Date of Patent: August 15, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hong-Yang Chen, Tian Sheng Lin, Yi-Cheng Chiu, Hung-Chou Lin, Yi-Min Chen, Kuo-Ming Wu, Chiu-Hua Chung
  • Patent number: 11728492
    Abstract: An atomically dispersed precursor (ADP) for preparing a non-platinum group metal electrocatalyst includes: sacrificial metal centers comprising a sacrificial metal selected from Cd and Zn; metal active sites comprising a transition metal; and first and second ligands linking the sacrificial metal centers and the metal active sites into a network. The ADP may be immobilized on a carbon support. The first and second ligands may comprise N-containing ligands of different carbon chain lengths. Alternatively, the first and second ligands may comprise N-containing ligands and O-containing ligands, respectively.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: August 15, 2023
    Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Hong Yang, Talha Al-Zoubi, Yu Zhou
  • Publication number: 20230242544
    Abstract: Provided herein are novel compounds, for example, compounds having a Formula (I), Formula (II), or Formula (III), or a pharmaceutically acceptable salt thereof. Also provided herein are methods of preparing the compounds and methods of using the compounds, for example, in inhibiting KRASG12D in a cancer cell, and/or in treating various cancer such as pancreatic cancer, colorectal cancer, lung cancer or endometrial cancer.
    Type: Application
    Filed: June 30, 2021
    Publication date: August 3, 2023
    Inventors: Xing DAI, Yaolin WANG, Yueheng JIANG, Haotao NIU, Yanqin LIU, Hong YANG, Zixing HAN, Zhenwu WANG, Liangshan TAO, Qiang ZHANG, Zhe SHI, Jifang WENG
  • Publication number: 20230246107
    Abstract: An integrated circuit includes a trench gate MOSFET including MOSFET cells. Each MOSFET cell includes an active trench gate in an n-epitaxial layer oriented in a first direction with a polysilicon gate over a lower polysilicon portion. P-type body regions are between trench gates and are separated by an n-epitaxial region. N-type source regions are located over the p-type regions. A gate dielectric layer is between the polysilicon gates and the body regions. A metal-containing layer contacts the n-epitaxial region to provide an anode of an embedded Schottky diode. A dielectric layer over the n-epitaxial layer has metal contacts therethrough connecting to the n-type source regions, to the p-type body regions, and to the anode of the Schottky diode.
    Type: Application
    Filed: April 13, 2023
    Publication date: August 3, 2023
    Inventors: SUNGLYONG KIM, SEETHARAMAN SRIDHAR, HONG YANG, YA PING CHEN, THOMAS EUGENE GREBS
  • Patent number: 11713211
    Abstract: A belt of an elevator system includes one or more tension elements extending longitudinally along a length of the belt, and an elastomeric jacket at least partially enveloping the one or more tension elements. The jacket defines a traction side configured to be interactive with a traction sheave of the elevator system and a back side opposite the traction side. A protective tape is applied to the elastomeric jacket at the back side. A method of assembling an elevator system includes forming a belt, and installing the belt in a hoistway of the elevator system. One or more additional components of the elevator system are installed in the hoistway. A protective tape is removed from a jacket of the belt after installation of the one or more additional components is completed.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: August 1, 2023
    Assignee: OTIS ELEVATOR COMPANY
    Inventors: Hong Yang, Xiaoyuan Chang
  • Patent number: 11715401
    Abstract: A display panel, a display device and a driving method. The display panel includes a display region and a peripheral region. The display region includes a subpixel unit array having a plurality of rows and a plurality of columns of subpixel units, and the peripheral region includes a gate drive circuit. The display region further includes a plurality of gate lines and a plurality of data lines. Each subpixel unit is driven by a scanning signal provided by one gate and a data signal provided by one data line, and a same data line is connected with at least two subpixel units which are not adjacent to each other and have a same color. The gate drive circuit includes a plurality of shift register units, and the plurality of gate lines are electrically connected with the plurality of shift register units in a one-to-one correspondence in order.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: August 1, 2023
    Assignees: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhaohui Meng, Wei Sun, Wenchao Han, Hong Yang, Lin Cong, Wenjun Xiao
  • Publication number: 20230239998
    Abstract: A wiring substrate includes a first insulating layer with a first opening, a second insulating layer with a second opening, a high-frequency wiring layer, a first wiring layer, a second wiring layer, and a plurality of conductive pillars. The high-frequency wiring layer including a high-frequency trace is sandwiched between the first insulating layer and the second insulating layer. The first opening and the second opening expose two sides of the high-frequency trace respectively. The high-frequency trace has a smooth surface which is not covered by the first insulating layer and the second insulating layer and has the roughness ranging between 0.1 and 2 ?m. The first insulating layer and the second insulating layer are all located between the first wiring layer and the second wiring layer. The conductive pillars are disposed in the second insulating layer and connected to the high-frequency trace.
    Type: Application
    Filed: March 30, 2023
    Publication date: July 27, 2023
    Inventors: Mao-Feng HSU, Zhi-Hong YANG
  • Patent number: 11700023
    Abstract: An apparatus comprises: a first plurality of first radio frequency chains; a second plurality of second radio frequency chains, the first radio frequency chains being configured to produce wider side-band emissions than the second radio frequency chains; at least one antenna array comprising antenna elements, each of a first plurality of the antenna elements being coupled with a corresponding one of the first plurality of first radio frequency chains, the first plurality of first radio frequency chains being configured to cause transmissions predominately in a first band within a channel, each of a second plurality of the antenna elements being coupled with a corresponding one of the second plurality of second radio frequency chains, the second plurality of second radio frequency chains being configured to cause transmissions predominately in at least one second band within the channel.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: July 11, 2023
    Assignee: NOKIA TECHNOLOGIES OY
    Inventors: Karthik Upadhya, Carl Nuzman, Alexei Ashikhmin, Stefan Wesemann, Hong Yang
  • Patent number: 11696391
    Abstract: A wiring substrate includes a first insulating layer with a first opening, a second insulating layer with a second opening, a high-frequency wiring layer, a first wiring layer, a second wiring layer, and a plurality of conductive pillars. The high-frequency wiring layer including a high-frequency trace is sandwiched between the first insulating layer and the second insulating layer. The first opening and the second opening expose two sides of the high-frequency trace respectively. The high-frequency trace has a smooth surface which is not covered by the first insulating layer and the second insulating layer and has the roughness ranging between 0.1 and 2 ?m. The first insulating layer and the second insulating layer are all located between the first wiring layer and the second wiring layer. The conductive pillars are disposed in the second insulating layer and connected to the high-frequency trace.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: July 4, 2023
    Assignees: AVARY HOLDING (SHENZHEN) CO., LTD., HONGQISHENG PRECISION ELECTRONICS (QINHUANGDAO) CO., LTD., GARUDA TECHNOLOGY CO., LTD
    Inventors: Mao-Feng Hsu, Zhi-Hong Yang
  • Publication number: 20230203061
    Abstract: Compounds for use in treating or preventing human immunodeficiency virus (HIV) infection are disclosed. The compounds have the following formula (I): including stereoisomers and pharmaceutically acceptable salts thereof, wherein R1, R2, L, W1, W2, X, Y, and Z are as defined herein. Methods associated with the preparation and use of such compounds, as well as pharmaceutical compositions comprising such compounds, are also disclosed.
    Type: Application
    Filed: October 28, 2022
    Publication date: June 29, 2023
    Inventors: Hang Chu, Ana Z. Gonzalez Buenrostro, Hongyan Guo, Xiaochun Han, Lan Jiang, Jiayao Li, Michael L. Mitchell, Hyung-Jung Pyun, Scott D. Schroeder, Gregg M. Schwarzwalder, Nathan D. Shapiro, Devleena M. Shivakumar, Qiaoyin Wu, Hong Yang, Jennifer R. Zhang
  • Patent number: D998858
    Type: Grant
    Filed: November 16, 2022
    Date of Patent: September 12, 2023
    Inventor: Hong Yang
  • Patent number: D998866
    Type: Grant
    Filed: November 16, 2022
    Date of Patent: September 12, 2023
    Inventor: Hong Yang