Abstract: Block copolymer nanostructures such as nanosheets, nanoribbons, and nanotubes, are provided. The nanotructures are formed by the self-assembly of block copolymers during evaporation of solvent from a sol that has been “disturbed”, either i) by the introduction of relief (e.g. curvature) and/or the inclusion of nanoparticles in the sol; or ii) externally, e.g. by physical deformation of a semi-solid form of the sol, or a combination of internal and external disturbance. The nanostructures have uses in, for example, energy devices, electronics, sensors and drug delivery applications.

Abstract: Unique methods for the efficient and beneficial use of converting dry nanomaterials such as dry carbon particles into liquid nano-agents are disclosed herein. The methods provide for fabrication of polymer and fiber reinforced composites, such as fiber-reinforced resins having such introduced nanomaterials to enable an increased dispersion and other beneficial properties.

Abstract: Porous polymer nanocomposites with controllable distribution/dispersion of components are provided. These nanocomposites are useful for various applications, such as flexible 3D electrodes for batteries, flexible sensors and conductors and the like. Also provided are emulsion compositions and methods for preparing the porous polymer nanocomposites.

Abstract: A gum like electrolyte composition and methods for making the composition are disclosed herein. The gum-like electrolyte composition may include a mixture of at least one wax particle, at least one electrolyte, and a polymer matrix comprising at least one polymer, wherein the wax particle and the electrolyte are dispersed in the polymer matrix, and wherein mixture is a malleable material.

Abstract: A note prompt system and method used for intelligent glasses are disclosed, where the text content are detected and a reading information comprising the original content and note is acquired. When the original content includes the original content, the associated note is directed to be displayed on the glasses of the intelligent glasses, whereby achieving in the technical efficacy of promoting convenience of note prompt.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: An LED lamp where the combination of an enlarged globe having a side cross section that is greater than 180°, LEDs with large view angles and the placement of the LEDs at the periphery of the printed circuit board adjacent the globe generates a view angle for the LED lamp greater than 180°. Further, a method of illumination through an LED lamp weaving supplying electrical power to a plurality of LEDs through a lamp base, generating light through the plurality of LEDs, where the LEDs have a view angle of greater than 120 degrees and are mounted in a circle at a peripheral edge of a printed circuit board, dissipating heat generated by the LEDs through a heat sink coupled to the printed circuit board, and transmitting light from the LEDs through a globe, the globe having a substantially spherical wall extending greater than 90 degrees from its vertical centerline.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: A polynucleic acid nanomechanical device with a linear array of alternating PX-JX2 devices and nucleic acid multi-crossover motifs that facilitate the assembly of a nucleic acid strand and functions as an artificial ribosome by translating a nucleic acid signal into an unrelated nucleic acid sequence.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: Various embodiments of solid-state conductors containing solid polymer electrolytes, electronic devices incorporating the solid-sate conductors, and associated methods of manufacturing are described herein. In one embodiment, a solid-state conductor includes poly(ethylene oxide) having molecules with a molecular weight of about 200 to about 8×106 gram/mol, and a soy protein product mixed with the poly(ethylene oxide), the soy protein product containing glycinin and ?-conglycinin and having a fine-stranded network structure. Individual molecules of the poly(ethylene oxide) are entangled in the fine-stranded network structure of the soy protein product, and the poly(ethylene oxide) is at least 50% amorphous.

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract: Various embodiments of solid-state conductors containing solid polymer electrolytes, electronic devices incorporating the solid-sate conductors, and associated methods of manufacturing are described herein. In one embodiment, a solid-state conductor includes poly(ethylene oxide) having molecules with a molecular weight of about 200 to about 8×106 gram/mol, and a soy protein product mixed with the poly oxide), the soy protein product containing glycinin and ?-conglycinin and having a fine-stranded network structure. Individual molecules of the poly(ethylene oxide) are entangled in the fine-stranded network structure of die soy protein product, and the poly(ethylene oxide) is at least 50% amorphous.

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract: Various embodiments of solid-state conductors containing solid polymer electrolytes, electronic devices incorporating the solid-sate conductors, and associated methods of manufacturing are described herein. In one embodiment, a solid-state conductor includes poly(ethylene oxide) having molecules with a molecular weight of about 200 to about 8×106 gram/mol, and a soy protein product mixed with the poly oxide), the soy protein product containing glycinin and ?-conglycinin and having a fine-stranded network structure. Individual molecules of the poly(ethylene oxide) are entangled in the fine-stranded network structure of die soy protein product, and the poly(ethylene oxide) is at least amorphous.

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract: A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.

Abstract: A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.