Abstract: The present application provides a wireless charging method, a wireless charging apparatus, and a storage medium. The method includes: detecting, in response to performing wireless charging, a charging parameter of a converter, wherein the charging parameter includes at least one parameter of an input current, an input voltage, an output current and an output voltage; determining a target operation mode according to the charging parameter, wherein the target operation mode is configured to determine a power-drawing mode of the converter; and controlling the converter to switch to the target operation mode, and charging a to-be-charged device.

Abstract: A latency adjustment method, a memory chip architecture, and a semiconductor memory are provided. The method includes: measuring a first latency of a first signal path; performing decoding based on the first latency to obtain a number of latency cycles, where the number of latency cycles represents a ratio of the first latency to a clock cycle; and controlling a second latency of a second signal path to be an integer multiple of the clock cycle based on the number of latency cycles.

Abstract: The present disclosure provides a pedestrian re-identification method and apparatus. The pedestrian re-identification apparatus detects a pedestrian to be identified in a specified video frame, and within a specified time period before the capture time of the specified video frame, extracts all pedestrians appearing in the captured video frame and taking them to be historical pedestrians; calculating the feature distances between the pedestrian to be identified and the historical pedestrians; in order of feature distance, from small to large, extracting historical pedestrian identifications corresponding to a predetermined number of feature distances, and clustering the extracted historical pedestrian identifications so as to re-identify the pedestrians to be identified. The present disclosure effectively suppresses external noise interference and improves the success rate of pedestrian re-identification.

Abstract: A method of processing a text, an electronic device, and a storage medium, which relates to a field of an image processing technology, in particular to a field of computer vision technology. The method includes: determining similarities between a plurality of fields contained in a text image to be processed and a plurality of predetermined field names; determining, from the plurality of fields, a field having a similarity greater than a similarity threshold as a target field name; determining a target field value corresponding to the target field name from M remaining field among the plurality of fields other than the target field name, where M?1; and outputting a correspondence between the target field name and the target field value.

Abstract: The invention discloses an augmented reality method and device, and relates to the field of computer technology. A specific implementation of the method includes: acquiring video information of a target, and acquiring real image information and real sound information of the target from the same; using the real image information to determine at least one image-based target state data, and using the real sound information to determine at least one sound-based target state data; fusing the image-based and sound-based target state data of the same type to obtain a target portrait data; and acquiring virtual information corresponding to the target portrait data, and superimposing the virtual information on the video information. This implementation can identify the current state of the target based on the image information and sound information of the target, and fuse the two identification results to obtain an accurate target portrait.

Abstract: A video sharing implementation method and system are provided, with the method including receiving a user's access request for a video sharing link which carries an address of a video and an identifier of a shared object, parsing the video sharing link to obtain the address of the video and the identifier of the shared object, playing the video according to the address of the video, and displaying the shared object corresponding to the identifier of the shared object in a video display interface, and jumping to a product link of the shared object in response to the user's selection of the shared object.

Abstract: The present disclosure provides a pedestrian re-identification method and apparatus. The pedestrian re-identification apparatus detects a pedestrian to be identified in a preset video frame, extract all pedestrians appearing in video frames shot in a preset time period before a shooting time of the preset video frame as historical pedestrians, calculate a feature distance between the pedestrian to be identified and each historical pedestrian of the historical pedestrians, extract historical pedestrian IDs corresponding to a preset number of the feature distances in ascending order of the feature distances, and cluster the historical pedestrian IDs to re-identify the pedestrian to be identified.

Abstract: The invention discloses an augmented reality method and device, and relates to the field of computer technology. A specific implementation of the method includes: acquiring video information of a target, and acquiring real image information and real sound information of the target from the same; using the real image information to determine at least one image-based target state data, and using the real sound information to determine at least one sound-based target state data; fusing the image-based and sound-based target state data of the same type to obtain a target portrait data; and acquiring virtual information corresponding to the target portrait data, and superimposing the virtual information on the video information. This implementation can identify the current state of the target based on the image information and sound information of the target, and fuse the two identification results to obtain an accurate target portrait.

Abstract: A transistor is fabricated by growing an epitaxial layer of semiconductor material on a semiconductor layer and forming an opening extending through the epitaxial layer at the gate location. This opening provides, from the epitaxial layer, a source epitaxial region on one side of the opening and a drain epitaxial region on an opposite side of the opening. The source epitaxial region and a first portion of the semiconductor layer underlying the source epitaxial region are annealed into a single crystal transistor source region. Additionally, the drain epitaxial region and a second portion of the semiconductor layer underlying the drain epitaxial region are annealed into a single crystal transistor drain region. A third portion of the semiconductor layer between the transistor source and drain regions forms a transistor channel region. A transistor gate electrode is then formed in the opening above the transistor channel region.

Abstract: The present disclosure provides a system and a method for automatic secure delivery of a model, and belongs to the field of delivery technologies of artificial intelligence models. The system includes: a model warehouse, including at least one machine learning model; a prediction warehouse, including at least one prediction module matching metadata of the machine learning model in the model warehouse; and a processing engine, configured to have a function of assembling the machine learning model in the model warehouse and the prediction module in the prediction warehouse; in which the prediction module is configured to have an authentication function and an anti-debugging function, and the processing engine is configured to assemble the machine learning model in the model warehouse and the prediction module in the prediction warehouse which have a metadata matching relationship, and to generate a prediction service after the assembly is completed.

Abstract: The present disclosure relates to the field of communications technologies, and discloses a channel training method, apparatus, and system, so as to resolve a problem in which a newly added ONU in a PON cannot be registered and go online in time. In embodiments of the present disclosure, a first moment for triggering channel training is determined; normal data is stopped sending from the first moment and a training frame is generated; and then the training frame is sent to all ONUs in a PON, so that a target ONU trains an automatic adaptive equalizer based on the training frame, where the target ONU is at least one of all the ONUs in the PON. The solutions provided in the embodiments of the present disclosure are applicable to the equalizer training the ONU.

Abstract: A transistor is fabricated by growing an epitaxial layer of semiconductor material on a semiconductor layer and forming an opening extending through the epitaxial layer at the gate location. This opening provides, from the epitaxial layer, a source epitaxial region on one side of the opening and a drain epitaxial region on an opposite side of the opening. The source epitaxial region and a first portion of the semiconductor layer underlying the source epitaxial region are annealed into a single crystal transistor source region. Additionally, the drain epitaxial region and a second portion of the semiconductor layer underlying the drain epitaxial region are annealed into a single crystal transistor drain region. A third portion of the semiconductor layer between the transistor source and drain regions forms a transistor channel region. A transistor gate electrode is then formed in the opening above the transistor channel region.

Abstract: A transistor is fabricated by growing an epitaxial layer of semiconductor material on a semiconductor layer and forming an opening extending through the epitaxial layer at the gate location. This opening provides, from the epitaxial layer, a source epitaxial region on one side of the opening and a drain epitaxial region on an opposite side of the opening. The source epitaxial region and a first portion of the semiconductor layer underlying the source epitaxial region are annealed into a single crystal transistor source region. Additionally, the drain epitaxial region and a second portion of the semiconductor layer underlying the drain epitaxial region are annealed into a single crystal transistor drain region. A third portion of the semiconductor layer between the transistor source and drain regions forms a transistor channel region. A transistor gate electrode is then formed in the opening above the transistor channel region.

Abstract: A video sharing implementation method and system are provided, with the method including receiving a user's access request for a video sharing link which carries an address of a video and an identifier of a shared object, parsing the video sharing link to obtain the address of the video and the identifier of the shared object, playing the video according to the address of the video, and displaying the shared object corresponding to the identifier of the shared object in a video display interface, and jumping to a product link of the shared object in response to the user's selection of the shared object.

Abstract: A transistor includes an active region supported by a substrate and having a source region, a channel region and a drain region. A gate stack extends over the channel region and a first sidewall surrounds the gate stack. A raised source region and a raised drain region are provided over the source and drain regions, respectively, of the active region adjacent the first sidewall. A second sidewall peripherally surrounds each of the raised source region and raised drain region. The second sidewall extends above a top surface of the raised source region and raised drain region to define regions laterally delimited by the first and second sidewalls. A conductive material fills the regions to form a source contact and a drain contact to the raised source region and raised drain region, respectively.

Abstract: The present disclosure relates to the field of communications technologies, and discloses a channel training method, apparatus, and system, so as to resolve a problem in which a newly added ONU in a PON cannot be registered and go online in time. In embodiments of the present disclosure, a first moment for triggering channel training is determined; normal data is stopped sending from the first moment and a training frame is generated; and then the training frame is sent to all ONUs in a PON, so that a target ONU trains an automatic adaptive equalizer based on the training frame, where the target ONU is at least one of all the ONUs in the PON. The solutions provided in the embodiments of the present disclosure are applicable to the equalizer training the ONU.

Abstract: A method includes: sending, by a signal transmitting device, a first PAM signal to a signal receiving device, where the first PAM signal includes N first level amplitudes, and N?3; receiving, by the transmitting device, feedback parameters sent by the receiving device, where the feedback parameters are determined based on the first PAM signal; determining, by the transmitting device, N target level amplitudes based on the feedback parameters, where intervals between every two adjacent target level amplitudes in the N target level amplitudes are different from each other; and generating, by the transmitting device based on the N target level amplitudes, a second PAM signal that needs to be sent to the receiving device.

Abstract: A memory cell includes a substrate layer, with a plurality of silicided semiconductor fins stacked on the substrate layer and spaced apart from one another. A first metal liner layer is stacked on the plurality of silicided semiconductor fins and on the substrate layer. A plurality of first contact pillars are stacked on the first metal liner layer adjacent a different respective one of the plurality of silicided semiconductor fins. A configurable resistance structure covers portions of the first metal liner layer that are stacked on the substrate layer and portions of the first metal liner layer that are stacked on each of the plurality of silicided semiconductor fins. A metal fill layer is stacked on the configurable resistance structure. A plurality of second contact pillars is stacked on the metal fill layer adjacent a space between a different pair of adjacent silicided semiconductor fins of the plurality thereof.

Abstract: A transistor is fabricated by growing an epitaxial layer of semiconductor material on a semiconductor layer and forming an opening extending through the epitaxial layer at the gate location. This opening provides, from the epitaxial layer, a source epitaxial region on one side of the opening and a drain epitaxial region on an opposite side of the opening. The source epitaxial region and a first portion of the semiconductor layer underlying the source epitaxial region are annealed into a single crystal transistor source region. Additionally, the drain epitaxial region and a second portion of the semiconductor layer underlying the drain epitaxial region are annealed into a single crystal transistor drain region. A third portion of the semiconductor layer between the transistor source and drain regions forms a transistor channel region. A transistor gate electrode is then formed in the opening above the transistor channel region.

Abstract: An integrated circuit includes a source-drain region, a channel region adjacent to the source-drain region, a gate structure extending over the channel region and a sidewall spacer on a side of the gate structure and which extends over the source-drain region. A dielectric layer is provided in contact with the sidewall spacer and having a top surface. The gate structure includes a gate electrode and a gate contact extending from the gate electrode as a projection to reach the top surface. The side surfaces of the gate electrode and a gate contact are aligned with each other. The gate dielectric layer for the transistor positioned between the gate electrode and the channel region extends between the gate electrode and the sidewall spacer and further extends between the gate contact and the sidewall spacer.