Abstract: The present disclosure provides a semiconductor device, comprising: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an hollow cavity below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer. Such a device structure of the present disclosure incorporate the respective advantages of the bulk silicon device and the SOI device, and has characteristics of lower cost, smaller leakage current, lower power consumption, fast speed, simple process and high integration level. Meanwhile, the floating body effect and the spontaneous heating effect are eliminated as compared with the SOI device.

Abstract: Embodiments of the present invention disclose a pixel unit made up of three rhombic sub-pixels spliced with each other, and, every two adjacent rhombic sub-pixels of the three rhombic sub-pixels share one common edge and are symmetrical about the common edge. In accordance to embodiments of the present invention, the rhombic sub-pixels have larger sizes and accordingly can be achieved in the existing production line with adoption of the existing mature production technology. Accordingly, high production yield, small spreading difficulty, and wide application prospect can be achieved for products. Meanwhile, embodiments of the present invention also provide a display panel, a display method and a display device.

Abstract: The invention provides a pixel structure and a display method thereof, and a display device including the pixel structure. The pixel structure comprises first pixel units and second pixel units which are sequentially arranged in staggered positions, wherein the first pixel unit comprises a first sub-pixel and a second sub-pixel arranged in an oblique line, and the second pixel unit comprises a third sub-pixel and a fourth sub-pixel arranged in an oblique line, and wherein the first sub-pixel and the third sub-pixel have different basic colors, and the second sub-pixel and the fourth sub-pixel have the same basic color.

Abstract: A semiconductor device, including: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an insulating layer below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer.

Abstract: A semiconductor device, including: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an insulating layer below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer.

Abstract: The present disclosure provides a pixel structure, a display device and a driving method. The pixel structure includes a plurality of pixel units, each pixel unit includes at least three subpixel units in three colors, and the subpixel units are combined to form a hexagonal pixel unit. Each edge of the pixel unit is adjoined to an edge of the adjacent pixel unit except for the pixel units at a periphery of the pixel structure. According to the present disclosure, the pixel units are arranged sequentially on a display panel. As compared with an arrangement mode of the pixel structure in the related art, the pixel units in the pixel structure of the present disclosure are arranged in a more compact manner, and thereby improving a resolution as well as color distribution of the display device.

Abstract: A method for removing nitrogen-oxides by microwave assisted catalysis, including: 1) charging a catalyst capable of absorbing and interacting with microwave into a reaction tube of a reactor device, to form a reaction bed; and 2) heating the reaction bed by microwaves; when a temperature of the reaction bed is raised to 100-600° C., passing a gas containing nitrogen-oxides through the reaction bed, and performing a gas-solid reaction between the gas and the catalyst to remove the nitrogen-oxides from the gas.

Abstract: Provided is a microwave catalyst. The microwave catalyst comprises: i) an active catalyst component comprising a metal and/or a metal oxide; ii) a microwave-absorbing component comprising at least one of CuO, ferrite spinel, and active carbon; and iii) a support. The microwave catalyst can be used for denitration by microwave catalysis, and has advantages such as high denitration efficiency, low energy consumption, environmental friendliness, and low costs. Also provided is a process for preparing the microwave catalyst and the use thereof.

Abstract: The method is used in the AP, including: the AP suspending a high-speed bus directly when the terminal enters a standby state; the AP resuming the high-speed bus and inquiring a network connection state of the BP when the terminal is wakened; and if connection, the AP continuing to use a wireless data link, otherwise, the BP re-establishing a wireless data link. The method is used in the BP, including: the BP entering a standby state directly when the BP detects that a high-speed bus is suspended; the BP entering a wakening state after detecting that the high-speed bus is resumed, inquiring and feeding back a network connection state of the BP to the AP after receiving an instruction of inquiring the networking state of the AP; re-establishing a wireless data link or maintaining a wireless data link of a current networking after receiving a networking instruction of the AP.

Abstract: A method for manufacturing the display device (70, 80) comprises: providing a first flexible substrate (101) comprising a first and second surfaces and a second flexible substrate (102) comprising a third and fourth surfaces; joining the second surface of the first flexible substrate with the third surface of the second flexible substrate by a connecting element (11) to form a laminated structure, wherein the first surface of the first flexible substrate (101) is a first outer surface of the laminated structure, and the fourth surface of the second flexible substrate (102) is a second outer surface of the laminated structure; forming a first flexible display element layer (10a) and a second flexible display element layer (10b) respectively on the first and second outer surfaces of the laminated structure; separating the first flexible substrate (101) from the second flexible substrate (102) of the laminated structure.

Abstract: Provided is a microwave catalyst. The microwave catalyst comprises: i) an active catalyst component comprising a metal and/or a metal oxide; ii) a microwave-absorbing component comprising at least one of CuO, ferrite spinel, and active carbon; and iii) a support. The microwave catalyst can be used for denitration by microwave catalysis, and has advantages such as high denitration efficiency, low energy consumption, environmental friendliness, and low costs. Also provided is a process for preparing the microwave catalyst and the use thereof.

Abstract: A method for removing nitrogen-oxides by microwave assisted catalysis, including: 1) charging a catalyst capable of absorbing and interacting with microwave into a reaction tube of a reactor device, to form a reaction bed; and 2) heating the reaction bed by microwaves; when a temperature of the reaction bed is raised to 100-600° C., passing a gas containing nitrogen-oxides through the reaction bed, and performing a gas-solid reaction between the gas and the catalyst to remove the nitrogen-oxides from the gas.

Abstract: A communication device based on a USB interface and a method for implementing service configuration are provided. The method is used for the communication device based on the USB interface, comprising: said communication device based on the USB interface reporting a device descriptor to a host, thus making said host complete loading of a host driver; said communication device based on the USB interface receiving a control instruction sent from the host side through the USB interface; and said communication device based on the USB interface configuring service attribute information according to said control instruction, so as to enable said service attribute information to indicate service attributes of said communication device based on the USB interface. The USB control information controls the service attribute information such that said device can implement support to service differentiation aiming at different operating systems.