Abstract: A method for making a micromirror device comprises is disclosed herein.

Abstract: A projection system, a spatial light modulator, and a method for forming a MEMS device is disclosed. The spatial light modulator can have two substrates bonded together with one of the substrates comprising a micromirror array. The two substrates can be bonded at the wafer level after depositing a getter material andlor solid or liquid lubricant on one or both of the wafers. The wafers can be bonded together hermetically if desired, and the pressure between the two substrates can be below atmosphere.

Abstract: A method for making a micromirror device comprises is disclosed herein.

Abstract: Lubricants for lubricating surfaces of microelectromechanical devices are disclosed. Specifically, the lubricants can be applied to the contacting surfaces of the microelectromechanical devices so as to remove stiction of the contacting surfaces.

Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored; and the endpoint of the removal process can be determined.

Abstract: Disclosed herein is a micromirror device having in-plane deformable hinge to which a deflectable and reflective mirror plate is attached. The mirror plate rotates to different angles in response to an electrostatic field established between the mirror plate and an addressing electrode associated with the mirror plate.

Abstract: Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.

Abstract: Disclosed herein is a micromirror device having in-plane deformable hinge to which a deflectable and reflective mirror plate is attached. The mirror plate rotates to different angles in response to an electrostatic field established between the mirror plate and an addressing electrode associated with the mirror plate.

Abstract: A method and apparatus for removing the sacrificial layers of microstructures in fabrications have been disclosed. The method comprises a plasma etching process followed by a non-energized spontaneous vapor phase etching process. The plasma and spontaneous etching processes utilize the same etchant that is capable of chemically reacting with the sacrificial material, wherein t chemical reaction is spontaneous.

Abstract: The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant, a noble gas halide or an interhalogen. The sample/workpiece that is etched can be, for example, a semiconductor device or MEMS device, etc. The material that is etched/removed by the vapor phase etchant is preferably silicon and the vapor phase etchant is preferably provided along with one or more diluents. Another feature of the etching system includes the ability to accurately determine the end point of the etch step, such as by creating an impedance at the exit of the etching chamber (or downstream thereof) so that when the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined.

Abstract: The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.

Abstract: Disclosed herein is a micromirror device having in-plane deformable hinge to which a deflectable and reflective mirror plate is attached. The mirror plate rotates to different angles in response to an electrostatic field established between the mirror plate and an addressing electrode associated with the mirror plate.

Abstract: Disclosed herein is a micromirror device having in-plane deformable hinge to which a deflectable and reflective mirror plate is attached. The mirror plate rotates to different angles in response to an electrostatic field established between the mirror plate and an addressing electrode associated with the mirror plate.

Abstract: The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by slowing the etch rate. The etch rate is preferably 30 um/hr or less, and can be 3 um/hr or even less. The selectivity is also improved by the addition of non-etchant gaseous additives to the etchant gas. Preferably the non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity. The etch process is also enhanced by the ability to accurately determine the end point of the removal step.

Abstract: The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.

Abstract: Disclosed herein is a micromirror device having in-plane deformable hinge to which a deflectable and reflective mirror plate is attached. The mirror plate rotates to different angles in response to an electrostatic field established between the mirror plate and an addressing electrode associated with the mirror plate.

Abstract: A projection system, a spatial light modulator, and a method for forming a MEMS device is disclosed. The spatial light modulator can have two substrates bonded together with one of the substrates comprising a micromirror array. The two substrates can be bonded at the wafer level after depositing a getter material andlor solid or liquid lubricant on one or both of the wafers. The wafers can be bonded together hermetically if desired, and the pressure between the two substrates can be below atmosphere.

Abstract: The present invention provides a method for removing sacrificial materials in fabrications of microstructures using a selected spontaneous vapor phase chemical etchants. During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material. Additional amount of the etchant are fed into the etch chamber according to a detection of an amount or an amount of an etching product so as to maintaining a substantially constant etching rate of the sacrificial materials inside the etch chamber. Accordingly, an etching system is provided for removing the sacrificial materials based on the disclosed etching method.

Abstract: The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material. Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same. The time duration of the feeding cycles are individually adjustable.

Abstract: The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.