Abstract: A single-step plasma etch process for etching both oxide and nitride selectively to photoresist and silicon. The etching gas includes a fluorocarbon, difluoromethane, oxygen, and carbon monoxide. The fluorocarbon is preferably hydrogen free. Preferred fluorocarbons are hexafluorobutadiene (C4F6), octafluorocyclobutane (C4F8), and carbon tetrafluoride (CF4), of which C4F6 is the most preferred. Approximately equal amounts are supplied of the fluorocarbon, difluoromethane, and oxygen and a significantly larger amount of carbon monoxide. The chemistry is also applicable to etching organo silicate glass selectively to photoresist.

Abstract: A photoresist plasma pretreatment performed prior to a plasma oxide etch. The plasma pretreatment is performed with an argon plasma or a carbon tetrafluoride and trifluoromethane plasma with lower power than in the main etch or is performed with a plasma of difluoromethane or trifluoromethane and carbon monoxide but no argon diluent gas. Thereby, striations on the oxide wall are reduced.

Abstract: The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

Abstract: The invention is a plasma reactor employing a chamber having a process gas inlet and enclosing a plasma process region. The reactor includes a workpiece support pedestal within the chamber capable of supporting a workpiece at a processing location interfacing with the plasma process region, the support pedestal and the chamber defining an annulus therebetween to permit gas to be evacuated therethrough from the plasma process region. One aspect of the invention includes a ring horseshoe magnet adjacent and about one side of the annulus, the magnet being spaced from the plasma processing location by a spacing substantially greater than the smallest distance across the annulus. The invention further includes the magnet defining opposite poles which are substantially closer together than the spacing of the magnet from the processing location, the magnet being oriented to provide its maximum magnetic flux across the annulus and a minimum of the flux at the plasma processing location.

Abstract: An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.

Abstract: An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.