Abstract: A method comprises the steps of providing a semiconductor device wafer; forming a first plurality of alignment marks on a first side of the semiconductor device wafer; forming a first pattern of a first conductivity type; forming a second plurality of alignment marks on a second side of the semiconductor device wafer; forming a bonded wafer by bonding a carrier wafer to the semiconductor device wafer; forming a third plurality of alignment marks on a free side of the carrier wafer; applying a grinding process; forming a plurality of device structure members; removing the carrier wafer; applying an implanting process and an annealing process; applying a metallization process and applying a singulation process.

Abstract: The invention relates to a new enantioselective process for producing useful intermediates for the manufacture of NEP inhibitors or prodrugs thereof, in particular NEP inhibitors comprising a ?-amino-?-biphenyl-?-methylalkanoic acid, or acid ester, backbone.

Abstract: A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer onto the first aluminum layer; depositing a second aluminum layer onto the first titanium interlayer; applying an etching process so that a plurality of trenches are formed so as to expose a plurality of top surfaces of a dielectric layer; and applying a singulation process so as to form a plurality of separated semiconductor devices.

Abstract: Provided are methods and compositions for prolonging survival and/or reducing or inhibiting tumor growth in a cancer subject receiving a regimen of one or more chemotherapeutic agents, an inhibitor of soluble epoxide hydrolase (sEHi) and a non-steroidal anti-inflammatory drug (NSAID) that inhibits one or more enzymes selected from the group consisting of cyclo-oxygenase (“COX”)-1, COX-2, and 5-lipoxygenase (“5-LOX”). The methods and compositions decrease toxicity and/or adverse side effects in subjects receiving a regimen of one or more chemotherapeutic agents.

Abstract: Image processing method, drone, and drone-camera system are provided. The method includes acquiring, according to a current environmental parameter of the drone, a target sky image that matches the current environmental parameter; and determining a direction parameter of the camera device when capturing a to-be-stitched image. The to-be-stitched image is an image captured under the current environmental parameter. The method further includes stitching the target sky image with the to-be-stitched image according to the direction parameter to obtain a panoramic image.

Abstract: An RC-IGBT includes a semiconductor body incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region.

Abstract: Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: The present disclosure provides a gas-insulated vacuum load break switch, including a high-voltage conductive loop having three phases independent from each other and of the same design, a control operating mechanism, a support box and a transmission apparatus. Each phase of the high-voltage conductive loop includes a load break switch unit with a vacuum interrupter, an isolating switch unit with an isolator, a plastic housing supporting the load break switch unit and the isolating switch unit, and an earthing switch unit; the control operating mechanism includes an operating mechanism for controlling the load break switch unit, an operating rod for controlling the isolating switch unit, and an operating mechanism for controlling the earthing switch unit.

Abstract: A press puffing device includes a piston support, a nozzle holder, and a sealing fixer. In the press puffing device, a power supply start button is pressed to produce an aroma gas, and the aroma gas is contained in the cylindrical inner cavity. By pressing the piston support, the contained smoke is compressed and flows to the air outlet through the lateral gas channel to spurt out.

Abstract: A press-type and nasal-inhaling-type smoking paraphernalia for heating cigarettes includes a roasting-type heating device and a press puffing device, wherein the roasting-type heating device heats the cigarette in the radiated manner; and the press puffing device drives the relevant mechanism to compress the smoke by the user pressing the piston support, and the compressed smoke spurts out from the air outlet for snorting by the user, which avoids the design of the complicated gas channel in the traditional electric heating smoking paraphernalia, the local overheating of the cigarette, and the direct contact of the mouth with the cigarette filter.

Abstract: A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer onto the first aluminum layer; depositing a second aluminum layer onto the first titanium interlayer; applying an etching process so that a plurality of trenches are formed so as to expose a plurality of top surfaces of a dielectric layer; and applying a singulation process so as to form a plurality of separated semiconductor devices.

Abstract: The invention relates to a new enantioselective process for producing useful intermediates for the manufacture of NEP inhibitors or prodrugs thereof, in particular NEP inhibitors comprising a ?-amino-?-biphenyl-?-methylalkanoic acid, or acid ester, backbone.

Abstract: A sliding cover-opening device includes a top support, a sliding-resistant device, and a rotatable cover opening device. The rotatable cover opening device further includes a rotatable pushing cover and a rotating torsional spring. According to the sliding cover-opening device, the rotatable pushing cover can automatically rotate to 90 degrees to open completely after sliding over a certain distance. Also, with the sliding-resistant device, users can experience a sliding feeling by hands.

Abstract: A sliding cover-opening device includes a top support, a sliding-resistant device, and a rotatable cover opening device. The rotatable cover opening device further includes a rotatable pushing cover and a rotating torsional spring. According to the sliding cover-opening device, the rotatable pushing cover can automatically rotate to 90 degrees to open completely after sliding over a certain distance. Also, with the sliding-resistant device, users can experience a sliding feeling by hands.

Abstract: A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer onto the first aluminum layer; depositing a second aluminum layer onto the first titanium interlayer; applying an etching process so that a plurality of trenches are formed so as to expose a plurality of top surfaces of a dielectric layer; and applying a singulation process so as to form a plurality of separated semiconductor devices.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The semiconductor power device further comprises mesa areas of the semiconductor substrate disposed between the gate trenches wherein the mesa areas are recessed and having a top mesa surface disposed vertically below a top surface of the HDP insulation layer wherein the HDP insulation layer covering over the conductive gate material constituting a stick-out boundary-defining layer surrounding the recessed mesa areas in the active cell areas between the gate trenches.

Abstract: A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.

Abstract: A compression charging device includes a cigarette case charging part and a cigarette set charging part. The cigarette case charging part includes a positive electrode cover, a positive spring, a negative spring, a charging insulation sleeve, and a PCB. The cigarette set charging part includes a filter holding seat, a charging base, and an insulation fixing sleeve. The compression charging device is configured for cigarette set charging. The negative spring and the positive spring have a double function of electrical conduction and bouncing.