Abstract: A steering apparatus and method for a vehicle. Steering controllers are connected via an internal communications network. Each of the steering controllers monitors the operating state of another steering controller using the internal communications network, so that, if one of the steering controllers currently controlling the steering motor operates abnormally, the steering motor is controlled by at least one steering controller of the remaining steering controllers.

Abstract: A press puffing device includes a piston support, a nozzle holder, and a sealing fixer. In the press puffing device, a power supply start button is pressed to produce an aroma gas, and the aroma gas is contained in the cylindrical inner cavity. By pressing the piston support, the contained smoke is compressed and flows to the air outlet through the lateral gas channel to spurt out.

Abstract: The present invention is directed to bladder cancer specific ligand peptides, comprising the amino acid sequence X1DGRX5GF (SEQ ID NO: 1), and methods of their use, e.g., for imaging detection for diagnosis of bladder, tumor localization to guide transurethral resection of bladder cancer, imaging detection of bladder cancer for follow-up after the initial treatment that can replace or complement costly cystoscopy, imaging detection of metastatic bladder cancer, and targeted therapy for superficial and metastatic bladder cancer.

Abstract: A press-type and nasal-inhaling-type smoking paraphernalia for heating cigarettes includes a roasting-type heating device and a press puffing device, wherein the roasting-type heating device heats the cigarette in the radiated manner; and the press puffing device drives the relevant mechanism to compress the smoke by the user pressing the piston support, and the compressed smoke spurts out from the air outlet for snorting by the user, which avoids the design of the complicated gas channel in the traditional electric heating smoking paraphernalia, the local overheating of the cigarette, and the direct contact of the mouth with the cigarette filter.

Abstract: An exemplary atomizer includes a housing, a liquid chamber defined in the housing, a heating part in the housing, an air passage, and two electrodes. The liquid chamber is configured for storing tobacco liquid. The heating part includes a liquid conductor and a heater. The liquid conductor is configured for absorbing the tobacco liquid from the liquid chamber. The heater is in contact with the liquid conductor. The heater is configured for heating the tobacco liquid to form aerosol. The air passage allows the aerosol to flow out of the atomizer. The two electrodes are arranged at one end of the housing, and electrically connected to two opposite ends of the heater. The atomizer further includes a temperature sensor configured for sensing a temperature of the heating part.

Abstract: A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer. The first titanium interlayer is disposed between the first aluminum layer and the second aluminum layer. A process for fabricating a semiconductor device comprising the steps of: preparing a semiconductor wafer; depositing a first aluminum layer onto the semiconductor wafer; depositing a first titanium interlayer onto the first aluminum layer; depositing a second aluminum layer onto the first titanium interlayer; applying an etching process so that a plurality of trenches are formed so as to expose a plurality of top surfaces of a dielectric layer; and applying a singulation process so as to form a plurality of separated semiconductor devices.

Abstract: An RC-IGBT includes a semiconductor body incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region.

Abstract: A visible light communication LED having a spiral inductance coil and a circular core is provided, comprising a sapphire substrate provided with a positive electrode welding spot and a negative electrode welding spot, and a plurality of LED cores deposited on the sapphire substrate. The negative electrode of a former core is connected with the positive electrode of a latter core, and the positive electrode of the first core and the negative electrode of the last core are respectively connected to the positive electrode welding spot and the negative electrode welding spot on the substrate. According to the present invention, each of the LED cores is surrounded by a spiral inductance coil, and a pin of one end of the spiral inductance coil is connected via a connecting wire with the negative electrode of an adjacent LED core, while the other end is directly connected with the positive electrode of the LED core that is surrounded by the spiral inductance coil.

Abstract: Provided are a sunshade device and a railway vehicle with the sunshade device. The sunshade device includes: a main sunshading board, the main sunshading board being provided with an avoiding space; and an auxiliary sunshading board, the auxiliary sunshading board being mounted on the main sunshading board in a position adjustable manner, so as to shield or avoid the avoiding space.

Abstract: The present disclosure provides a gas-insulated vacuum load break switch, including a high-voltage conductive loop having three phases independent from each other and of the same design, a control operating mechanism, a support box and a transmission apparatus. Each phase of the high-voltage conductive loop includes a load break switch unit with a vacuum interrupter, an isolating switch unit with an isolator, a plastic housing supporting the load break switch unit and the isolating switch unit, and an earthing switch unit; the control operating mechanism includes an operating mechanism for controlling the load break switch unit, an operating rod for controlling the isolating switch unit, and an operating mechanism for controlling the earthing switch unit.

Abstract: The present application discloses a coaxial dual-band antenna, including a waveguide tube, a ring groove, a high frequency feed, and a dielectric ring. The high frequency feed and the dielectric ring have a same axis with the waveguide tube. The waveguide tube has a tubular structure, and is configured to transmit a first electromagnetic wave, the ring groove whose opening direction is the same as an output direction of the first electromagnetic wave is on a wall of the waveguide tube. The high frequency feed is located in the waveguide tube. The dielectric ring is filled between the waveguide tube and the high frequency feed, and has a multi-layer structure. The area sizes of planes that are at layers of the dielectric ring and that are perpendicular to the axis alternately change, and a height of the dielectric ring is less than a height of the waveguide tube.

Abstract: A method comprises the steps of providing a semiconductor device wafer; forming a first plurality of alignment marks on a first side of the semiconductor device wafer; forming a first pattern of a first conductivity type; forming a second plurality of alignment marks on a second side of the semiconductor device wafer; forming a bonded wafer by bonding a carrier wafer to the semiconductor device wafer; forming a third plurality of alignment marks on a free side of the carrier wafer; applying a grinding process; forming a plurality of device structure members; removing the carrier wafer; applying an implanting process and an annealing process; applying a metallization process and applying a singulation process.

Abstract: An RC-IGBT includes a semiconductor body formed having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region.

Abstract: A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.

Abstract: An RC-IGBT includes a semiconductor body formed having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process and the field stop zone has an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In alternate embodiments, RC-IGBT device, including the epitaxial layer field stop zone, are realized through a fabrication process that uses front side processing only to form the backside contact regions and the front side device region. The fabrication method forms an RC-IGBT device using front side processing to form the backside contact regions and then using wafer bonding process to flip the semiconductor structure onto a carrier wafer so that front side processing is used again to form the device region.

Abstract: A method for processing an interrupt by a virtualization platform, and a related device, where the method includes determining an nth physical central processing unit (pCPU) from U target pCPUs when an ith physical interrupt occurs in a jth physical input/output device, setting the nth pCPU to process the ith physical interrupt, determining an ith virtual interrupt according to the ith physical interrupt, and determining an mth virtual central processing unit (vCPU) from V target vCPUs such that a kth virtual machine (VM) uses the mth vCPU to execute the ith virtual interrupt, where U, V, i, j, k, m, and n are positive integers while U and V are greater than or equal to 1.

Abstract: The present invention provides a secure communication method and apparatus. A security proxy device is arranged between a client and a server. The method comprises: the security proxy device using a key exchange mechanism to perform connection key agreement with the client; and assigning a token for the client after identity authentication for the client succeeds; upon receiving a request sent by the client to the server, validating whether the token sent together with the request is a token assigned for the client; if the validation succeeds, forwarding to the server a request obtained by using the connection key or a token connection key to decrypt the request, wherein the token connection key is assigned for the client and then sent to the client by using the connection key; after receiving a response returned by the server, using the connection key or token connection key to encrypt the response, and forwarding the encrypted response to the client.

Abstract: This invention discloses a semiconductor power device disposed in a semiconductor substrate including an active cell areas and a termination area. The semiconductor power device further comprises a plurality of gate trenches formed at a top portion of the semiconductor substrate in the active cell area wherein each of the gate trenches is partially filled with a conductive gate material with a top portion of the trenches filled by a high density plasma (HDP) insulation layer. The semiconductor power device further comprises mesa areas of the semiconductor substrate disposed between the gate trenches wherein the mesa areas are recessed and having a top mesa surface disposed vertically below a top surface of the HDP insulation layer wherein the HDP insulation layer covering over the conductive gate material constituting a stick-out boundary-defining layer surrounding the recessed mesa areas in the active cell areas between the gate trenches.

Abstract: A visible light communication emission device with improved response frequency is provided, comprising a substrate, wherein an inductance coil module is provided on the substrate, a LED chip matrix formed by series connection of a plurality of LED chips is provided on the inductance coil module, and the inductance coil module and the LED chip matrix are connected in series, wherein inductance value L of the inductance coil module is configured to be: L=1/(?2C), with C representing capacity in the device provided by LED chips and ? representing frequency, wherein the inductance coil module comprises more than one inductance coil whose composition materials from inside to outside are successively Cr, Al, Cr, Ti, and Ag.

Abstract: The present invention is directed to C-type lectin-like molecule-1 (CLL1) specific ligand peptides, comprising the amino acid motif LR(S/T), and methods of their use, e.g., for imaging detection for diagnosis of leukemia and the presence of leukemic stem cells (LSCs) and targeted therapy against leukemia mediated at least in part by CLL1-expressing LSCs.