Patents by Inventor Hongyong Zhang

Hongyong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
    Patent number: 5308998
    Abstract: An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain regions. An oxide film may be provided to cover the surface of the gate electrode, formed by anodizing the surface of the gate electrode, and this layer may be used as a mask when forming the crystallinity offset regions.
    Type: Grant
    Filed: August 24, 1992
    Date of Patent: May 3, 1994
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang
  • Method for manufacturing a semiconductor device
    Patent number: 5254208
    Abstract: A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.
    Type: Grant
    Filed: July 15, 1991
    Date of Patent: October 19, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hongyong Zhang
  • Method of manufacturing a semiconductor film and a semiconductor device by sputtering in a hydrogen atmosphere and crystallizing
    Patent number: 5236850
    Abstract: A method of manufacturing a semiconductor film and a semiconductor device is disclosed. The method comprises the steps of:forming a non-single crystal semiconductor film on a surface by sputtering in an atmosphere comprising hydrogen; andcrystallizing the non-single crystal semiconductor film at a temperature of 450.degree. C. to 750.degree. C.
    Type: Grant
    Filed: September 18, 1991
    Date of Patent: August 17, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hongyong Zhang
  • Method for manufacturing a semiconductor device comprising a semiconductor film
    Patent number: 5210050
    Abstract: A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diameter of 30 .ANG. to 4 .mu.m as viewed from the upper surface of said semiconductor film and contains oxygen impurity and concentration of said oxygen impurity is not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 at an inside position of said semiconductor film. Also is disclosed a method for fabricating semiconductor devices mentioned hereinbefore, which comprises depositing an amorphous semiconductor film containing oxygen impurity at a concentration not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 by sputtering from a semiconductor target containing oxygen impurity at a concentration not higher than 5.times.10.sup.18 atoms.multidot.cm.sup.
    Type: Grant
    Filed: October 11, 1991
    Date of Patent: May 11, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hongyong Zhang