Abstract: The present invention provides a photo-curable adhesive composition for display panel assembly comprising a) at least one polyurethane acrylate having Tg value from ?70 to 20° C.; b) at least one (meth)acrylate monomer; c) at least one chain transfer agent; d) at least two thixotropy agents, wherein first thixotropy agent is selected from the group consisting of hydrophobic fumed silica, hydrophilic fumed silica and mixtures thereof and second thixotropy agent is selected from the group consisting of modified urea, polyhydroxycarboxylic acid esters and mixtures thereof; e) at least one photoinitiator; f) at least one plasticizer; and g) at least one defoamer. The photo-curable adhesive composition according to the present invention can be used in bonding two transparent substrates together or in bonding one transparent substrate and one opaque substrate together. Furthermore, the composition according to the present invention can be used in a process of making an optical assembly.

Abstract: The present disclosure relates to a photo-curable adhesive composition and the cured product thereof. The photo-curable adhesive composition according to the present disclosure comprises hydrophobic urethane (meth)acrylate polymers; a (meth)acrylate monomer or (meth)acrylamide monomer; a photoinitiator and a slip agent. The photo-curable adhesive composition according to the present disclosure exhibits good peelable property and optical property.

Abstract: The invention relates to the field of traditional Chinese medicine, in particular to provides traditional Chinese medicine compositions for the treatment of psoriasis, their preparations and their preparation methods. The Chinese medicine compositions of the invention are consisted of 20-80 parts of Rumex madaio, 20-80 parts of Radix sophora flavescens, 10-50 parts of Herba Siphonostegiae, 10-40 parts of Chinese pulsatilla chinensis, and 5-30 parts of Acacia catechu, by weight. The invention also includes the preparation methods of the traditional Chinese medicine compositions and the preparations containing the traditional Chinese medicine compositions and method for preparing the same.

Abstract: A process for chemical mechanical polishing a substrate containing cobalt and TiN to planarize the surface and at least improve surface topography of the substrate. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; aspartic acid or salts thereof; and, colloidal silica abrasives with diameters of ?25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away to planarize the substrate to provide improved cobalt:TiN removal rate selectivity.

Abstract: The present embodiments disclose a wireless mobile device, including a metal frame, a circuit board disposed in the metal frame, where there is a slot between at least one side edge of the circuit board and the metal frame, a first grounding point is connected to the circuit board and the metal frame, a second grounding point is connected to the circuit board and the metal frame, and a feeding point is located between the first grounding point and the second grounding point and is connected to the circuit board and the metal frame; and each antenna open-circuit stub suspends in space on an outer side of the circuit board, one end is connected to the metal frame by crossing the slot, and a connection point of the antenna open-circuit stub and metal frame is located between the feeding point and the second grounding point.

Abstract: Provided are a surface nuclear magnetic resonance system excited by a geoelectric field and a field working method for groundwater detection. A computer is connected to a synchronization module via a transmitter. The transmitter is connected to a first electrode and a second electrode via a transmission line. Receiving coils are symmetrically arranged on two sides of the transmission line. Each of the receivers is mounted with two receiving coils. The computer is connected to a fourth receiver via a first receiver, a second receiver, a third receiver, a sixth receiver and a fifth receiver, and the synchronization module is connected to the first receiver, the second receiver, the third receiver, the fourth receiver, the fifth receiver and the sixth receiver.

Abstract: Applications may request persistent storage in nonvolatile memory. The persistent storage is maintained across power events and application instantiations. Persistent storage may be maintained by systems with or without memory management units.

Abstract: A solid powder reactor includes: a reaction kettle, including a hollow kettle body and covers; an agitating device, including an agitating shaft and blades, wherein the agitating shaft is arranged in the kettle body and the blades are fixed on the agitating shaft; and a heating system, including a kettle body heater and an agitating heater, wherein the kettle body heater is fixed on the kettle body and the agitating heater is arranged on the agitating device. While the agitating device and the kettle body are driven to agitate, by a driving device fixedly arranged outside the reaction kettle, the heating system heats materials in the reactor. The present invention is applicable to solid reaction of solid powders. The materials containing attached water or not are both feasible, and the materials can directly enter the reactor and react. Compared with conventional solid reactors, the present invention increases the production efficiency.

Abstract: A process for chemical mechanical polishing a substrate containing cobalt and TiN to planarize the surface and at least improve surface topography of the substrate. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; aspartic acid or salts thereof; and, colloidal silica abrasives with diameters of ?25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away to planarize the substrate to provide improved cobalt:TiN removal rate selectivity.

Abstract: The invention is an aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The slurry includes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?), 0.5 to 3 wt % colloidal silica particles (?), a cobalt corrosion inhibitor, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9. The total concentrations remain within the following formulae as follows: wt % (?)+wt % (?)=1 to 4 wt % for polishing the cobalt or cobalt alloy; wt % (?)?2*wt % (?) for limiting static etch of the cobalt or cobalt alloy; and wt % (?)+wt % (?)?3*wt % (?) for limiting static etch.

Abstract: A method, an apparatus, and a system have been disclosed. An embodiment of the method includes an autonomous memory device receiving a set of instructions, the memory device executing the set of instructions, combining the set of instructions with any data recovered from the memory device in response to the set of instructions into a packet, and transmitting the packet from the memory device.

Abstract: A process for chemical mechanical polishing a substrate containing cobalt and TiN to at least improve cobalt: TiN removal rate selectivity. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alanine or salts thereof; and, colloidal silica abrasives with diameters of ?25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away such that there is an improvement in the cobalt: TiN removal rate selectivity.

Abstract: Applications may request persistent storage in nonvolatile memory. The persistent storage is maintained across power events and application instantiations. Persistent storage may be maintained by systems with or without memory management units.

Abstract: The aqueous solution is useful for chemical mechanical polishing a semiconductor substrates. The solution includes by weight percent, 0 to 25 oxidizing agent, 0.05 to 5 guanidine hydrochloride, guanidine sulfate, amino-guanidine hydrochloride, guanidine acetic acid, guanidine carbonate, guanidine nitrate or a combination thereof, 0.1 to 1 glycine, 0.1 to 5 N-methylethanolamine, 0.05 to 5 organic acid complexing agent, 0.05 to 2.2 benzotriazole inhibitor 0 to 5 colloidal silica, and balance water. The solution has a buffering capacity, ? of 0.1 to 0.8 with the buffering components being free of alkali, alkaline and transition metal ions.

Abstract: The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?) into a slurry containing 0.5 to 3 wt % colloidal silica particles (?), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Co0 to Co+3 of the semiconductor substrate to prevent runaway dissolution of the Co0 reduces polishing defects in the semiconductor substrate.

Abstract: The invention is an aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The slurry includes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?), 0.5 to 3 wt % colloidal silica particles (?), a cobalt corrosion inhibitor, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9. The total concentrations remain within the following formulae as follows: wt % (?)+wt % (?)=1 to 4 wt % for polishing the cobalt or cobalt alloy; wt % (?)?2*wt % (?) for limiting static etch of the cobalt or cobalt alloy; and wt % (?)+wt % (?)?3*wt % (?) for limiting static etch.

Abstract: The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?) into a slurry containing 0.5 to 3 wt % colloidal silica particles (?), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Co0 to Co+3 of the semiconductor substrate to prevent runaway dissolution of the Co0 reduces polishing defects in the semiconductor substrate.

Abstract: A method for preparing ?-calcium sulfate hemihydrate with calcium sulfate dihydrate includes steps of: uniformly mixing the calcium sulfate dihydrate with an additive solution, and obtaining a mixture, wherein weight percentages of the calcium sulfate dihydrate and the additive solution in the mixture are respectively 90.00-95.00% and 5.00-10.00%, and the additive solution contains water, inorganic salt, organic salt, organic acid, surfactant, and seed crystal; rising a temperature of the mixture to 130-150° C., keeping for 20-120 minutes, and the calcium sulfate dihydrate in the mixture transforming to the ?-calcium sulfate hemihydrate; drying the mixture after reaction at 105-160° C., and thereafter obtaining ?-calcium sulfate hemihydrate product. The used calcium sulfate dihydrate can be natural raw materials and industrial by-products. The industrial by-products can be directly applied.

Abstract: Provided are a surface nuclear magnetic resonance system excited by a geoelectric field and a field working method for groundwater detection. A computer is connected to a synchronization module via a transmitter. The transmitter is connected to a first electrode and a second electrode via a transmission line. Receiving coils are symmetrically arranged on two sides of the transmission line. Each of the receivers is mounted with two receiving coils. The computer is connected to a fourth receiver via a first receiver, a second receiver, a third receiver, a sixth receiver and a fifth receiver, and the synchronization module is connected to the first receiver, the second receiver, the third receiver, the fourth receiver, the fifth receiver and the sixth receiver.

Abstract: A method, an apparatus, and a system have been disclosed. An embodiment of the method includes an autonomous memory device receiving a set of instructions, the memory device executing the set of instructions, combining the set of instructions with any data recovered from the memory device in response to the set of instructions into a packet, and transmitting the packet from the memory device.