Abstract: A process for chemical mechanical polishing a substrate containing cobalt and TiN to planarize the surface and at least improve surface topography of the substrate. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; aspartic acid or salts thereof; and, colloidal silica abrasives with diameters of ?25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away to planarize the substrate to provide improved cobalt:TiN removal rate selectivity.

Abstract: The invention is an aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The slurry includes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?), 0.5 to 3 wt % colloidal silica particles (?), a cobalt corrosion inhibitor, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9. The total concentrations remain within the following formulae as follows: wt % (?)+wt % (?)=1 to 4 wt % for polishing the cobalt or cobalt alloy; wt % (?)?2*wt % (?) for limiting static etch of the cobalt or cobalt alloy; and wt % (?)+wt % (?)?3*wt % (?) for limiting static etch.

Abstract: A method, an apparatus, and a system have been disclosed. An embodiment of the method includes an autonomous memory device receiving a set of instructions, the memory device executing the set of instructions, combining the set of instructions with any data recovered from the memory device in response to the set of instructions into a packet, and transmitting the packet from the memory device.

Abstract: Applications may request persistent storage in nonvolatile memory. The persistent storage is maintained across power events and application instantiations. Persistent storage may be maintained by systems with or without memory management units.

Abstract: A process for chemical mechanical polishing a substrate containing cobalt and TiN to at least improve cobalt: TiN removal rate selectivity. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alanine or salts thereof; and, colloidal silica abrasives with diameters of ?25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away such that there is an improvement in the cobalt: TiN removal rate selectivity.

Abstract: The aqueous solution is useful for chemical mechanical polishing a semiconductor substrates. The solution includes by weight percent, 0 to 25 oxidizing agent, 0.05 to 5 guanidine hydrochloride, guanidine sulfate, amino-guanidine hydrochloride, guanidine acetic acid, guanidine carbonate, guanidine nitrate or a combination thereof, 0.1 to 1 glycine, 0.1 to 5 N-methylethanolamine, 0.05 to 5 organic acid complexing agent, 0.05 to 2.2 benzotriazole inhibitor 0 to 5 colloidal silica, and balance water. The solution has a buffering capacity, ? of 0.1 to 0.8 with the buffering components being free of alkali, alkaline and transition metal ions.

Abstract: The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?) into a slurry containing 0.5 to 3 wt % colloidal silica particles (?), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Co0 to Co+3 of the semiconductor substrate to prevent runaway dissolution of the Co0 reduces polishing defects in the semiconductor substrate.

Abstract: The invention is an aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The slurry includes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?), 0.5 to 3 wt % colloidal silica particles (?), a cobalt corrosion inhibitor, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9. The total concentrations remain within the following formulae as follows: wt % (?)+wt % (?)=1 to 4 wt % for polishing the cobalt or cobalt alloy; wt % (?)?2*wt % (?) for limiting static etch of the cobalt or cobalt alloy; and wt % (?)+wt % (?)?3*wt % (?) for limiting static etch.

Abstract: The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?) into a slurry containing 0.5 to 3 wt % colloidal silica particles (?), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Co0 to Co+3 of the semiconductor substrate to prevent runaway dissolution of the Co0 reduces polishing defects in the semiconductor substrate.

Abstract: A method for preparing ?-calcium sulfate hemihydrate with calcium sulfate dihydrate includes steps of: uniformly mixing the calcium sulfate dihydrate with an additive solution, and obtaining a mixture, wherein weight percentages of the calcium sulfate dihydrate and the additive solution in the mixture are respectively 90.00-95.00% and 5.00-10.00%, and the additive solution contains water, inorganic salt, organic salt, organic acid, surfactant, and seed crystal; rising a temperature of the mixture to 130-150° C., keeping for 20-120 minutes, and the calcium sulfate dihydrate in the mixture transforming to the ?-calcium sulfate hemihydrate; drying the mixture after reaction at 105-160° C., and thereafter obtaining ?-calcium sulfate hemihydrate product. The used calcium sulfate dihydrate can be natural raw materials and industrial by-products. The industrial by-products can be directly applied.

Abstract: Provided are a surface nuclear magnetic resonance system excited by a geoelectric field and a field working method for groundwater detection. A computer is connected to a synchronization module via a transmitter. The transmitter is connected to a first electrode and a second electrode via a transmission line. Receiving coils are symmetrically arranged on two sides of the transmission line. Each of the receivers is mounted with two receiving coils. The computer is connected to a fourth receiver via a first receiver, a second receiver, a third receiver, a sixth receiver and a fifth receiver, and the synchronization module is connected to the first receiver, the second receiver, the third receiver, the fourth receiver, the fifth receiver and the sixth receiver.

Abstract: A method, an apparatus, and a system have been disclosed. An embodiment of the method includes an autonomous memory device receiving a set of instructions, the memory device executing the set of instructions, combining the set of instructions with any data recovered from the memory device in response to the set of instructions into a packet, and transmitting the packet from the memory device.

Abstract: Provided are an imaging device implementing pseudo correlated double sampling (CDS), and an imaging method and a control method of the image device. The imaging device includes: a pixel array comprising a pixel configured to generate a current in response to incident light; a readout circuit configured to read out a plurality of output signals of the pixel, the plurality of output signals corresponding to a plurality of consecutive integration periods of the pixel within an aggregating period; and an aggregator configured to aggregate the plurality of output signals read out by the readout circuit to obtain a final aggregated output corresponding to illuminance for the aggregating period, wherein the readout circuit is configured to read out the plurality of output signals by, for each output signal, sampling a signal voltage of the pixel and sampling a subsequent reset voltage of the pixel and obtaining a difference therebetween.

Abstract: An embodiment includes a system, comprising: a buffer configured to store a plurality of events, each event including a plurality of bits; an output circuit configured to output events from the buffer; and a controller coupled to the buffer and the output circuit and configured to: cause the output circuit to output a first event from the buffer; and select a second event from the buffer to be output by the output circuit after the first event based on bits associated with the first event.

Abstract: Embodiments disclose a radio frequency front-end system and a signal transmission control method. The system includes a first antenna, a second antenna, a first radio frequency circuit, a second radio frequency circuit, and a controller. The controller is configured to acquire a transmission frequency band selected by the first radio frequency circuit, and when a frequency in the transmission frequency band selected by the first radio frequency circuit is less than a preset frequency, to control the first radio frequency circuit to connect to the second antenna. The controller is further configured to disconnect a connection between the second radio frequency circuit and the second antenna, or to maintain an open circuit state between the second radio frequency circuit and the second antenna.

Abstract: An antenna system includes a first antenna and a second antenna, where the first antenna and the second antenna are connected in parallel to an antenna feeding point, and a phase-shift apparatus is connected in series between the first antenna or the second antenna and the antenna feeding point, so that an imaginary part of impedance at the antenna feeding point is canceled out near a central frequency channel number. The antenna system provides an expansion in radio frequency bandwidth in free space and an increase in average efficiency.

Abstract: An embodiment of the present invention discloses a mobile terminal, which relates to the field of communications technologies and is invented to enable the mobile terminal to have relatively good metal texture and appearance. The mobile terminal includes a metal rear cover used as a grounding component and at least one antenna, where the antenna includes a grounding pin, and the grounding pin is electrically connected to the metal rear cover. The present invention is mainly applicable to mobile terminal products.

Abstract: An antenna comprising a conductive base comprising a west edge, an east edge, a north edge, a south edge, and a center axis, a left slot of nonconductive material extending from the south edge toward the north edge and positioned between the west edge and the center axis, and a right slot of nonconductive material extending from the south edge toward the north edge and positioned between the east edge and the center axis.

Abstract: A separated communications device includes a body and a movable connector; the body includes an antenna and a first conductive strip, and the antenna is electrically connected to the first conductive strip; the movable connector includes a second conductive strip; when the movable connector is connected to the body, a part, covered by the movable connector due to the connection, on a surface of the body is a connection position of the body; and the antenna is disposed on the body near the connection position. When the body is connected to the movable connector, the second conductive strip is connected to the first conductive strip, so that the first conductive strip serves as a part of the antenna, and the second conductive strip serves as an extended part of the antenna.

Abstract: In some embodiments, an imaging device includes a pixel array. At least one of the pixels includes a photodiode that can generate charges, and a select transistor that receives the charges in its bulk. When the select transistor is selected, a pixel current through it may depend on a number of the received charges, thus evidencing how much light it detected. A reset transistor may reset the voltage of the bulk.