Abstract: A method and system of controlling a process from run-to-run for semiconductor manufacturing. The method of control utilizes a process model to establish a relationship between process control input data and process control output data. The method of control involves minimizing the difference between target process control output data and process control output data predicted by applying the process model to the new process control input data.

Abstract: A method and system for determining a substrate type during a seasoning process is presented. An optical signal is acquired from a process in a plasma processing system, and the optical signal is compared to a pre-determined threshold value. Depending upon the comparison, the substrate type is determined to be of a correct type, or an incorrect type.

Abstract: A method for material processing utilizing a material processing system (1) to perform a process. The method a process, measures a scan of data, and transforms the data scan into a signature including at least one spatial component. The scan of data can include a process performance parameter (14) such as an etch rate, an etch selectivity, a deposition rate, a film property, etc. A relationship can be determined between the measured signature and a set of at least one controllable process parameter (12) using multivariate analysis, and this relationship can be utilized to improve the scan of data corresponding to a process performance parameter. For example, utilizing this relationship to minimize the spatial components of the scan of data can affect an improvement in the process uniformity.

Abstract: A method for material processing utilizing a material processing system to perform a process. The method performs a process (510), measures a scan of data (520), and transforms the data scan (530) into a signature (540) including at least one spatial component. The scan of data (530) can include a process performance parameter such as an etch rate, an etch selectivity, a deposition rate, a film property, etc. The signature (540) can be stored (550), and compared with either a previously acquired signature or with an ideal signature (560). If at least one spatial component substantially deivates from the reference spatial component, then a process fault has potentially occurred. If the cumulative deviation of all spatial components or a select group of components substantially deviates from a reference set of spatial components, then a process fault has potentially occurred.

Abstract: A system and method for transferring a pattern from an overlying layer into an underlying layer, while laterally trimming a feature present within the pattern is described. The pattern transfer is performed using an etch process according to a process recipe, wherein at least one variable parameter within the process recipe is adjusted given a target trim amount. The adjustment of the variable parameter is achieved using a process model established for relating trim amount data with the variable parameter.

Abstract: A method and processing tool are provided for trimming a gate electrode structure containing a gate electrode layer with a first dimension. A reaction layer is formed through reaction with the gate electrode structure. The reaction layer is the selectively removed from the unreacted portion of the gate electrode structure by chemical etching, thereby forming a trimmed gate electrode structure with a second dimension that is smaller than the first dimension. The trimming process can be carried out under process conditions where formation of the reaction layer is substantially self-limiting. The trimming process can be repeated to further reduce the dimension of the gate electrode structure.

Abstract: An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded data matrix, assembling a first endpoint signal matrix using target endpoint data for a specific etch process, performing a partial least squares analysis on the recorded data matrix and the first endpoint signal matrix to refine the recorded data matrix, and computing a correlation matrix based upon the refined recorded data matrix and the first endpoint signal matrix. The method further includes performing a second etch process to form a second recorded data matrix. The correlation matrix and the second recorded data matrix are analyzed to determine whether an endpoint of the second etch process has been achieved.

Abstract: A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.

Abstract: A method of monitoring a processing system for processing a substrate during the course of semiconductor manufacturing is described. The method comprises acquiring data from the processing system for a plurality of observations. It further comprises constructing a principal components analysis (PCA) model from the data, wherein a weighting factor is applied to at least one of the data variables in the acquired data. The PCA mode is utilized in conjunction with the acquisition of additional data, and at least one statistical quantity is determined for each additional observation. Upon setting a control limit for the processing system, the at least one statistical quantity is compared with the control limit for each additional observation. When, for example, the at least one statistical quantity exceeds the control limit, a fault for the processing system is detected.

Abstract: A plasma processing system that comprises a process chamber, a plasma source, a light detection device and a controller. The controller is useful for determining a seasoning state of the plasma processing system. The present invention further provides a method of determining the seasoning state of a plasma processing system comprising the steps of forming a first plasma in the process chamber utilizing the plasma source; measuring a first signal related to light emitted from the first plasma using the light detection device and storing the first signal using the controller; forming a second plasma in the process chamber utilizing the plasma source; measuring a second signal related to light emitted from the second plasma using the light detection device and storing the second signal using the controller; and correlating a change between the first signal and the second signal with a seasoning state of the plasma processing system.

Abstract: A plasma processing system that comprises a process chamber, a plasma source, a light detection device and a controller. The controller is useful for determining a seasoning state of the plasma processing system. The present invention further provides a method of determining the seasoning state of a plasma processing system comprising the steps of forming a first plasma in the process chamber utilizing the plasma source; measuring a first signal related to light emitted from the first plasma using the light detection device and storing the first signal using the controller; forming a second plasma in the process chamber utilizing the plasma source; measuring a second signal related to light emitted from the second plasma using the light detection device and storing the second signal using the controller; and correlating a change between the first signal and the second signal with a seasoning state of the plasma processing system.

Abstract: A method is provided for compressing data. The method includes collecting data representative of a process. The method further includes scaling at least a portion of the collected data to generate mean values and mean-scaled values for the collected data. The method also includes calculating Scores from the mean-scaled values for the collected data using at most first, second, third and fourth Principal Components derived from a model using archived data sets and saving the Scores and the mean values.

Abstract: A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes calculating Scores from at least a portion of the collected intensity data using at most first, second, third and fourth Principal Components derived from a model. The method also includes determining the etch endpoint using Scores corresponding to at least one of the first, second, third and fourth Principal Components as an indicator for the etch endpoint.

Abstract: A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the collected intensity data into at most first and second Principal Components with respective Loadings and corresponding Scores. The method also includes determining the etch endpoint using the respective Loadings and corresponding Scores of the second Principal Component as an indicator for the etch endpoint using real-time Principal Components Analysis applied to optical emission spectral data from a previous portion of the plasma etch process.

Abstract: A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the collected intensity data into at most first and second Principal Components with respective Loadings and corresponding Scores. The method also includes determining the etch endpoint using the respective Loadings and corresponding Scores of the second Principal Component as an indicator for the etch endpoint using Principal Components Analysis applied to archived optical emission spectral data.

Abstract: A method is provided for determining an etch endpoint. The method includes collecting intensity data representative of optical emission spectral wavelengths during a plasma etch process. The method further includes analyzing at least a portion of the collected intensity data into at most first and second Principal Components with respective Loadings and corresponding Scores. The method also includes determining the etch endpoint using the respective Loadings and corresponding Scores of the second Principal Component as an indicator for the etch endpoint using thresholding applied to the respective Loadings of the second Principal Component.