Abstract: A TOF depth imaging system for providing a depth image of an object is provided comprising a light source configured to illuminate an object with amplitude modulated light characterized by a wavelength ? and a modulation frequency f, a surface-normal electroabsorption modulator configured to receive and to modulate reflected light from the object with the modulation frequency f, and an image sensor configured to receive and to detect modulated reflected light from the electroabsorption modulator. The electroabsorption modulator comprises a top doped layer of semiconductor, a bottom doped layer of semiconductor having opposite polarity to the top doped layer, and an active layer between the top and bottom doped layers, the active layer configured as a superlattice structure comprising multiple sublayers of semiconductor configured to provide alternating quantum wells and barriers, the active layer comprising quantum wells configured to exhibit delocalized electron-hole behavior.

Abstract: Single-photon detectors, arrays of single-photon detectors, methods of using the single-photon detectors and methods of fabricating the single-photon detectors are provided. The single-photon detectors combine the efficiency of a large absorbing volume with the sensitivity of nanometer-scale carrier injectors, called “nanoinjectors”. The photon detectors are able to achieve single-photon counting with extremely high quantum efficiency, low dark count rates, and high bandwidths.

Abstract: Single-photon detectors, arrays of single-photon detectors, methods of using the single-photon detectors and methods of fabricating the single-photon detectors are provided. The single-photon detectors combine the efficiency of a large absorbing volume with the sensitivity of nanometer-scale carrier injectors, called “nanoinjectors”. The photon detectors are able to achieve single-photon counting with extremely high quantum efficiency, low dark count rates, and high bandwidths.

Abstract: In one aspect, an apparatus for converting light having a first wavelength to a light having a second wavelength is provided. The apparatus includes an interband light detector configured to detect light with the first wavelength, a light emitting device configured to emit light with the second wavelength, and a connector connecting the light detector to the light emitting device. In another aspect, an apparatus includes an absorber layer configured to absorb light having a first wavelength, a barrier and trap layer adjacent the absorber layer, an injector layer adjacent the barrier and trap layer, and an emitting device configured to emit light having a second wavelength. In a further aspect, a method is provided and includes absorbing an input light having a first wavelength, converting the first wavelength to a second wavelength different in size than the first wavelength, and emitting an output light having the second wavelength.

Abstract: Apparatuses and methods to image a flat surface with a spot-size that is about less than or equal to the wavelength of an incident planar electromagnetic wave, and with large field of view, are disclosed herein. More specifically, the apparatuses and methods disclosed herein utilize two hemispheres comprised of one or more dielectric materials to produce the Fourier transform of an incident planar electromagnetic wave onto a flat surface located in a projection plane.

Abstract: Single-photon detectors, arrays of single-photon detectors, methods of using the single-photon detectors and methods of fabricating the single-photon detectors are provided. The single-photon detectors combine the efficiency of a large absorbing volume with the sensitivity of nanometer-scale carrier injectors, called “nanoinjectors”. The photon detectors are able to achieve single-photon counting with extremely high quantum efficiency, low dark count rates, and high bandwidths.

Abstract: A photolithography method of patterning photoresist involves disposing a two-dimensional array of focusing particles of spherical or other shape on the photoresist and illuminating the particles on the photoresist to generate deep, sub-wavelength patterns on the photoresist. When developed, a positive photoresist layer generates a two-dimensional array of micro- or nano-holes on the developed photoresist. When developed, a negative photoresist layer generates a two-dimensional array of micro- or nano-pillars on the developed photoresist.

Abstract: A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.

Abstract: A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable of spatially separating the electron and the hole of an photo-generated electron-hole pair in one layer, transporting one of the electron and the hole of the photo-generated electron-hole pair into another layer, focalizing it into a desired volume and trapping it therein, the desired volume having a dimension in a scale of nanometers to reduce its capacitance and increase the change of potential for a trapped carrier, and a nano-injector, capable of injecting carriers into the plurality of InP/AlInGaAs/AlGaAsSb layers, where the carrier transit time in the nano-injector is much shorter than the carrier recombination time therein, thereby causing a very large carrier recycling effect.

Abstract: A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable of spatially separating the electron and the hole of an photo-generated electron-hole pair in one layer, transporting one of the electron and the hole of the photo-generated electron-hole pair into another layer, focalizing it into a desired volume and trapping it therein, the desired volume having a dimension in a scale of nanometers to reduce its capacitance and increase the change of potential for a trapped carrier, and a nano-injector, capable of injecting carriers into the plurality of InP/AlInGaAs/AlGaAsSb layers, where the carrier transit time in the nano-injector is much shorter than the carrier recombination time therein, thereby causing a very large carrier recycling effect.

Abstract: A photolithography method of patterning photoresist involves disposing a two-dimensional array of focusing particles of spherical or other shape on the photoresist and illuminating the particles on the photoresist to generate deep, sub-wavelength patterns on the photoresist. When developed, a positive photoresist layer generates a two-dimensional array of micro- or nano-holes on the developed photoresist. When developed, a negative photoresist layer generates a two-dimensional array of micro- or nano-pillars on the developed photoresist.

Abstract: An optical waveguide assembly and method of forming the same is described. The optical waveguide assembly includes a waveguide, an amorphous silicon arrayed waveguide grating communicative with the waveguide, and an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating. The method includes providing a waveguide, providing an amorphous silicon arrayed waveguide grating communicative with the waveguide, and providing an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating.

Abstract: An optical waveguide assembly and method of forming the same is described. The optical waveguide assembly includes a waveguide, an amorphous silicon arrayed waveguide grating communicative with the waveguide, and an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating. The method includes providing a waveguide, providing an amorphous silicon arrayed waveguide grating communicative with the waveguide, and providing an integrated amorphous silicon waveguide grating laser which communicatively outputs a laser output responsive to the amorphous silicon arrayed waveguide grating.

Abstract: A high power laser system including: a plurality of emitters each including a large area waveguide and a plurality of quantum well regions optically coupled to the large area waveguide, wherein each of the quantum well regions exhibits a low modal overlap with the large area waveguide; a collimator optically coupled to the emitters; a diffraction grating optically coupled through the collimator to the emitters; and, an output coupler optically coupled through the diffraction grating to the emitters.

Abstract: A monolithic light amplification system including: an un-doped waveguide; a ridge waveguide positioned over the un-doped waveguide; and, at least a doped layer between the un-doped waveguide and ridge waveguide; wherein, the un-doped waveguide and ridge waveguide cooperate to amplify light input to the un-doped waveguide.

Abstract: A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.

Abstract: A high power laser system including: a plurality of emitters each including a large area waveguide and a plurality of quantum well regions optically coupled to the large area waveguide, wherein each of the quantum well regions exhibits a low modal overlap with the large area waveguide; a collimator optically coupled to the emitters; a diffraction grating optically coupled through the collimator to the emitters; and, an output coupler optically coupled through the diffraction grating to the emitters.

Abstract: A modulator, including: an active modulator layer including a plurality of step quantum wells, wherein at least one of the plurality of step quantum wells is configured to have a leaky electron energy state; and at least one inactive layer bounding the active modulator layer.

Abstract: A method of fabricating a tunable quantum dot apparatus, comprising: forming multi-quantum wells sandwiched substantially between at least two barrier layers; spin coating a non-continuous mask onto at least one of said barrier layers; forming a gate material onto the mask, wherein the non-continuity of the mask substantially prevents formation of a continuous gate material layer; lifting off at least a portion of the gate material; self isolating the gate material; and, forming a top contact onto at least a portion of said barrier layers

Abstract: A monolithic light amplification system including: an un-doped waveguide; a ridge waveguide positioned over the un-doped waveguide; and, at least a doped layer between the un-doped waveguide and ridge waveguide; wherein, the un-doped waveguide and ridge waveguide cooperate to amplify light input to the un-doped waveguide.