Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer.

Abstract: A method of manufacturing a flexible display device is disclosed. The method includes arranging a first substrate having a plurality of depression units, forming a first plastic film in each of the plurality of depression units, forming a thin film transistor (TFT) on the first plastic film, forming a display device on the TFT, where the display device is configured to be electrically connected to the TFT, encapsulating an upper portion of the display device, cutting the first substrate, and separating the first substrate from the first plastic film.

Abstract: A method of manufacturing a flexible display device is provided. The method includes: preparing a first flexible substrate on which a display unit is formed; forming an encapsulation unit including a base substrate, a second flexible substrate formed on the base substrate, and a barrier layer formed on the second flexible substrate; combining the encapsulation unit with the display unit; and separating the base substrate from the second flexible substrate by using a difference between a coefficient of thermal expansion of the base substrate and a coefficient of thermal expansion of the second flexible substrate, by applying a heated solution between the base substrate and the second flexible substrate. The flexible display device is easily manufactured since the base substrate and the second flexible substrate, which have different coefficients of thermal expansion and are coupled to each other, are separable from each other by applying the heated solution.

Abstract: A substrate for a flexible display is disclosed. The substrate has a film stress range that does not affect an electronic device such as a thin film transistor, and includes a barrier layer having excellent oxygen and moisture blocking characteristics, and a method of manufacturing the substrate. The substrate includes: a plastic substrate having a glass transition temperature from about 350° C. to about 500° C.; and a barrier layer disposed on the plastic substrate, having a multi-layer structure, wherein at least one silicon oxide layer and at least one silicon nitride layer are alternately stacked on each other, and having a film stress from about ?200 MPa to about 200 MPa due to the at least one silicon oxide layer and the at least one silicon nitride layer.

Abstract: A substrate for a flexible display and a manufacturing method thereof are disclosed. The substrate is thin and has a low oxygen and moisture transmittance. The substrate includes a plastic substrate and a barrier layer formed on the plastic substrate and having a density gradient in which a content of a metal increases toward the plastic substrate and a content of oxygen increases away from the plastic substrate.

Abstract: A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer.

Abstract: A display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines, a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.

Abstract: An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate electrode and extended in a first direction, a source electrode formed on the transparent substrate and connected to a source line and a drain electrode formed on the channel layer to cover the channel layer. The insulating layer has a contact hole to partially expose the drain electrode and the transparent substrate. The pixel electrode is connected to the drain electrode through the contact hole. When the above array substrate is employed in a liquid crystal display panel, the array substrate reduces pixel defect.

Abstract: A substrate for a display device includes an insulating substrate, a data line, an insulating layer and a pixel electrode. The insulating substrate has a switching element. The data line is formed on the insulating substrate to be electrically connected to a first electrode of the switching element. The insulating layer is formed on the insulating substrate having the switching element and the data line. The insulating layer has a contact hole through which a second electrode of the switching element is partially exposed and a groove adjacent to the data line. The pixel electrode is formed on the insulating layer to be electrically connected to the second electrode through the contact hole. Therefore, an image display quality may be improved, and a manufacturing cost of the LCD device may be reduced.

Abstract: Embodiments of the present invention generally relate to a touch sensible organic light emitting device. The organic light emitting device according to an exemplary embodiment of the present invention comprises: a substrate; a thin film transistor disposed on the substrate; an organic light emitting element connected to the thin film transistor and receiving a data voltage; a plurality of encapsulation thin films disposed on the organic light emitting element, and encapsulating the thin film transistor and the organic light emitting element; a planarization layer disposed on the encapsulation thin film; and a touch sensor disposed on the planarization layer.

Abstract: In a metal wiring, a method of forming the metal wiring, a display substrate having the metal wiring and a method of manufacturing the display substrate, the metal wiring includes a metal film and a first amorphous carbon film. The metal film is formed on a base substrate using a copper-containing material, and the first amorphous carbon film is formed beneath the metal film. A process for forming the metal wiring including the amorphous carbon film may be greatly simplified, and generation of defects in the metal wiring may be prevented or reduced.

Abstract: A display device includes a display panel, a driving chip, and a non-conductive adhesive film. The display panel includes a pad member having a plurality of conductive pads. The driving chip includes a body and a plurality of bumps. The body has a driving circuit. The bumps are protruded from the body to make contact with the pads, respectively. The non-conductive adhesive film fixes the driving chip to the pad member. Therefore, a manufacturing cost is decreased, and a yield is increased.

Abstract: An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate electrode and extended in a first direction, a source electrode formed on the transparent substrate and connected to a source line and a drain electrode formed on the channel layer to cover the channel layer. The insulating layer has a contact hole to partially expose the drain electrode and the transparent substrate. The pixel electrode is connected to the drain electrode through the contact hole. When the above array substrate is employed in a liquid crystal display panel, the array substrate reduces pixel defect.

Abstract: An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate electrode and extended in a first direction, a source electrode formed on the transparent substrate and connected to a source line and a drain electrode formed on the channel layer to cover the channel layer. The insulating layer has a contact hole to partially expose the drain electrode and the transparent substrate. The pixel electrode is connected to the drain electrode through the contact hole. When the above array substrate is employed in a liquid crystal display panel, the array substrate reduces pixel defect.

Abstract: A display device and a manufacturing method thereof are provided. The display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines., a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.

Abstract: In a metal wiring, a method of forming the metal wiring, a display substrate having the metal wiring and a method of manufacturing the display substrate, the metal wiring includes a metal film and a first amorphous carbon film. The metal film is formed on a base substrate using a copper-containing material, and the first amorphous carbon film is formed beneath the metal film. A process for forming the metal wiring including the amorphous carbon film may be greatly simplified, and generation of defects in the metal wiring may be prevented or reduced.

Abstract: Provided is a jig which can be used in a process of adhering a adhering object to a to-be adhered object in a vacuum atmosphere, and vacuum equipment for use in the adhering process. The jig includes a first frame and a second frame which together define a chamber for receiving the first and second objects. The first frame includes a seating portion having a plurality of seating pockets, and an actuator disposed below each of the seating pockets, the actuator being movable with respect to the seating pockets. A first elastic member is disposed in the jig below the actuator. The first elastic member being positioned such that it can contact and move the actuator in response to a change of pressure in the jig chamber. The second frame includes a second elastic member which is positioned adjacent to each of the seating pockets. The second elastic member being movable to the change of pressure in the jig chamber.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: A display device includes a display panel, a driving chip, and a non-conductive adhesive film. The display panel includes a pad member having a plurality of conductive pads. The driving chip includes a body and a plurality of bumps. The body has a driving circuit. The bumps are protruded from the body to make contact with the pads, respectively. The non-conductive adhesive film fixes the driving chip to the pad member. Therefore, a manufacturing cost is decreased, and a yield is increased.

Abstract: System and techniques for providing signal lines comprising copper alloys including at least one of molybdenum, tungsten, and chromium. The present disclosure provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; ohmic contacts formed on the gate insulating layer and the semiconductor layer; a data line having a source electrode formed on one of the ohmic contacts and having a narrower width than the ohmic contact thereunder; a drain electrode facing the source electrode with a gap therebetween and having a narrower width than the ohmic contact thereunder; and a pixel electrode connected to the drain electrode, wherein at least one of the gate line and the data line comprises a Cu-alloy that contains Cu and one selected from molybdenum (Mo), tungsten (W), and chromium (Cr).