Abstract: A substrate for a display device includes an insulating substrate, a data line, an insulating layer and a pixel electrode. The insulating substrate has a switching element. The data line is formed on the insulating substrate to be electrically connected to a first electrode of the switching element. The insulating layer is formed on the insulating substrate having the switching element and the data line. The insulating layer has a contact hole through which a second electrode of the switching element is partially exposed and a groove adjacent to the data line. The pixel electrode is formed on the insulating layer to be electrically connected to the second electrode through the contact hole. Therefore, an image display quality may be improved, and a manufacturing cost of the LCD device may be reduced.

Abstract: An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate electrode and extended in a first direction, a source electrode formed on the transparent substrate and connected to a source line and a drain electrode formed on the channel layer to cover the channel layer. The insulating layer has a contact hole to partially expose the drain electrode and the transparent substrate. The pixel electrode is connected to the drain electrode through the contact hole. When the above array substrate is employed in a liquid crystal display panel, the array substrate reduces pixel defect.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.