Abstract: The present invention provides a copolyester resin composition which has good physical properties, biodegradability and processability and a process for preparing and/or producing the same. To improve the biodegradability and physical properties of the copolyester, the present invention applied multi-stage reaction step, and copolyester resin having number average molecular weight of from 30,000 to 70,000, weight average molecular weight of from 100,000 to 600,000, melting point of from 55° C. to 120° C., and melt index of from 0.1 to 30 g/10 minute (190° C., 2,160 g) is obtained. The processability and physical properties of the copolyester resin of the present invention has been greatly enhanced by incorporating (i) an “aromatic-aliphatic prepolymers” having number average molecular weight of from 300 to 30,000 and the contiguous repeating unit of aromatic group in the dicarboxylic acid position of “aromatic-aliphatic prepolymers” is less than 5.

Abstract: A remotely controlled aircraft has a center member and a steering assembly. The steering assembly comprises a carriage, a remote control motor, a center member and a connecting arm. The carriage pivotably is attached to the center member. The remote control motor has a control arm and is disposed within the carriage. The center member arm has a first end and a second end. The first end of the center member arm is fixedly attached to the center member. The center member and the center member arm is arranged in a non-parallel manner. The connecting arm has a first end and a second end. The first end of the connecting arm is pivotably attached to the second end of the center member arm. The second end of the connecting arm is pivotably attached to the control arm of the remote control motor.

Abstract: A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer.

Abstract: A semiconductor memory device has a hierarchical or divided wordline structure wordline structure. Sub-wordline activation signals are arranged such that the number of sub-wordline drive units in memory blocks to which one sub-wordline activation signal is supplied is identical to that of sub-wordline drive units in memory blocks to which the other sub-wordline activation signal is supplied. Upon such sub-wordline activation signal arrangement, power consumption is not imbalanced when each of the sub-wordline activation signals has high level of a boosting voltage.

Abstract: The present invention relates to a polyolefin-based composite resin composition having a low coefficient of linear thermal expansion, wherein the composition comprises a) 40 to 80 weight % of crystalline ethylene-propylene copolymer, b) 5 to 40 weight % of ethylene-alpha-olefin copolymer, c) 5 to 30 weight % of calcium-metasilicate based wollastonite, and d) 5 to 30 weight % of inorganic reinforcing agent based on the total composition amount.

Abstract: The present invention provides an optical system for crystallization tool for producing an crystallized silicon thin film by using an excimer laser as a light source to crystallize an amorphous silicon thin film through a fine stripped pattern, including 1st to 10th lenses sequentially arranged along an optical axis from said excimer laser, wherein the 1st lens having both side made convex; the 2nd lens having one side made convex toward the light source and the other side concave; the 3rd lens having one side made convex toward the light source and the other side concave; the 4th lens having both side concave; the 5th lens having both side made convex; the 6th lens having one side concave toward the light source and the other side made convex; the 7th lens having one side made convex toward the light source and the other side concave; the 8th lens having both side made convex; the 9th lens having one side made convex toward the light source and the other side concave; and the 10th lens having both side made

Abstract: An aromatic group containing copolyester resin composition which has good biodegradability and physical properties, wherein; (i) 0.1 wt % to 30 wt % of an aliphatic prepolymers having number average molecular weight of from 300 to 30,000; (ii) one or a plurality of aromatic dicarboxylic acid (or an acid anhydride thereof) which containing aromatic group in the molecule; (iii) one or a plurality of aliphatic (including cyclic type) dicarboxylic acid (or an acid anhydride thereof); and (iv) one or a plurality of aliphatic (including cyclic type) glycol, wherein the copolyester resin has number average molecular weight of from 30,000 to 90,000, weight average molecular weight of from 100,000 to 600,000, melting point of from 70° C. to 150° C., and melt index of from 0.1 to 50 g/10 min. (190° C., 2,160 g), and the process for preparing and/or producing the same.

Abstract: A next-generation mobile communication system is disclosed, including a high-speed cell searching method and apparatus using a distributed sample acquisition scheme (DSA) and a differentially-coherent phase shift keying (DPSK)-based DSA (hereinafter referred to as D2SA) in a direct sequence code division multiple access (DS/CDMA) system. The high-speed cell searching apparatus uses the D2SA technique using the 2b-ary DPSK modulation instead of the quadrature modulation to simultaneously convey b (b≧1) state samples for the SRG that generates the long-period PN sequences in the next-generation DS/CDMA system using the DSA technique, and employs the data constellation pre-rotation technique to provide the certainty of the channel estimation. A high-speed cell searching method using the apparatus is also provided.

Abstract: An iris identification system and method of identifying the identity of an animate being through iris scanning are disclosed. The system features an iris system pick-up unit including a camera for capturing iris images to create input image signals. The iris image pick-up unit is operated with a control unit that is interfaced with a data processing unit for preprocessing the input image signals into processed data. The processed data is representative of one of a plurality of parameters for iris identification selected from the group consisting of (1) the density and texture form of the iris fiber structure using a frequency transformation method, (2) pupilliary reaction, (3) the shape of the pupil, (4) autonomous nervous wreath reaction, (5) shape of the autonomous nervous wreath, (6) the existence of lacuna, (7) the location of the lacuna, and (8) the shape of the lacuna.

Abstract: A radiation apparatus of a hard disk drive includes a base frame, a spindle motor installed at the base frame, a hard disk rotatably supported by a rotation shaft of the spindle motor, a cover frame coupled to the base frame and having a hole formed therein, a radiation plate installed at the cover frame and formed of a copper alloy having a thermal conductivity higher than that of the cover frame, and a portion for coupling the rotation shaft and the radiation plate so that driving heat generated by the spindle motor can be directly transferred to the radiation plate.

Abstract: A process for the bioconversion of a nitrile to its corresponding amide product, particularly acrylonitrile to acrylamide which is used for forming polymers. The process uses a thermophilic bacterium having a nitrile hydratase activity that is constitutively expressed, activated by cobalt ions, stable at 60° C., and is most active between 20° C. to 70° C. with optimum activity at 55° C. Alternatively, the process uses the enzyme extracted from the thermophilic bacterium to convert a nitrile to its amide product. The genes encoding nitrile hydratase and amidase are described in which the former is useful for the conversion of an nitrile to its amide and the later is useful for the conversion of an amide to its acid.

Abstract: A process for nondestructive heating and supplying of ammonia feed gas wherein high quality ammonia (typically greater than 90% and as high as 99%) is preserved at temperatures well in excess of the conventional limit of 230° C. (typically from 400 to 700° C.) by controlling the selection of metal surfaces in contact with the hot gas, the bulk temperature of the gas, the wall temperature, the pressure, the contact time, and the spatial surface density. Such hot gases are particularly useful for the manufacture of hydrogen cyanide.

Abstract: Methods of forming integrated circuit capacitors include the steps of forming a lower electrode of a capacitor by forming a conductive layer pattern (e.g., silicon layer) on a semiconductor substrate and then forming a hemispherical grain (HSG) silicon surface layer of first conductivity type on the conductive layer pattern. The inclusion of a HSG silicon surface layer on an outer surface of the conductive layer pattern increases the effective surface area of the lower electrode for a given lateral dimension. The HSG silicon surface layer is also preferably sufficiently doped with first conductivity type dopants (e.g., N-type) to minimize the size of any depletion layer which may be formed in the lower electrode when the capacitor is reverse biased and thereby improve the capacitor's characteristic Cmin/Cmax ratio. A diffusion barrier layer (e.g., silicon nitride) is also formed on the lower electrode and then a dielectric layer is formed on the diffusion barrier layer.

Abstract: A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer.

Abstract: A process for the bioconversion of a nitrile to its corresponding amide product, particularly acrylonitrile to acrylamide which is used for forming polymers. The process uses a thermophilic bacterium having a nitrile hydratase activity that is constitutively expressed, activated by cobalt ions, stable at 60° C., and is most active between 20° C. to 70° C. with optimum activity at 55° C. Alternatively, the process uses the enzyme extracted from the thermophilic bacterium to convert a nitrile to its amide product. The genes encoding nitrile hydratase and amidase are described in which the former is useful for the conversion of an nitrile to its amide and the later is useful for the conversion of an amide to its acid.

Abstract: Methods of forming integrated circuit capacitors include the steps of forming a lower electrode of a capacitor by forming a conductive layer pattern (e.g., silicon layer) on a semiconductor substrate and then forming a hemispherical grain (HSG) silicon surface layer of first conductivity type on the conductive layer pattern. The inclusion of a HSG silicon surface layer on an outer surface of the conductive layer pattern increases the effective surface area of the lower electrode for a given lateral dimension. The HSG silicon surface layer is also preferably sufficiently doped with first conductivity type dopants (e.g., N-type) to minimize the size of any depletion layer which may be formed in the lower electrode when the capacitor is reverse biased and thereby improve the capacitor's characteristic Cmin/Cmax ratio. A diffusion barrier layer (e.g., silicon nitride) is also formed on the lower electrode and then a dielectric layer is formed on the diffusion barrier layer.

Abstract: A process for the bioconversion of a nitrile to its corresponding amide product, particularly acrylonitrile to acrylamide which is used for forming polymers. The process uses a thermophilic bacterium having a nitrile hydratase activity that is constitutively expressed, activated by cobalt ions, stable at 60° C., and is most active between 20° C. to 70° C. with optimum activity at 55° C. Alternatively, the process uses the enzyme extracted from the thermophilic bacterium to convert a nitrile to its amide product. The genes encoding nitrile hydratase and amidase are described in which the former is useful for the conversion of an nitrile to its amide and the later is useful for the conversion of an amide to its acid.

Abstract: A Column Address Strobe (CAS) latency control circuit for a SDRAM and a layout of the same allows an adequate CAS latency operation allowance at a high operation frequency. The SDRAM includes a plurality of banks each having ‘n’ main amplification units, ‘n’ bit data buses disposed between the plurality of banks each shared by respective main amplification units, ‘n’ CAS latency control circuits disposed concentrated central to the data buses one to one matched to the data buses, ‘n’ DQ blocks disposed connected to outputs of respective CAS latency control circuits in lengths different from one another, and a clock buffer for applying a clock signal to the CAS latency control circuits.

Abstract: A reference voltage generating circuit generates a reference voltage by using a voltage difference of a PMOS transistor, to thereby exclude the reliability of a back-bias voltage. The reference voltage generating circuit includes a reference voltage generating unit which generates a first reference voltage with respect to a power supply voltage, and a level converting unit which converts the first reference voltage applied from the reference voltage generating unit to a second reference voltage with respect to a ground voltage.

Abstract: A method of authenticating and charging a client using a web infoshop service system comprising the steps of: transmitting protocol address information from the service system to the client when the client accesses the service system and selects a protocol access; when a user request to the service system is for a charged content provider, adding an authentication value to the user request, transmitting the user request including the authentication value from the service system to the charged content provider, and transmitting information corresponding to the user request from the content provider to the client; and when the client cancels the protocol access and notifies cancellation information to the service system, transmitting charging information using the service system.