Patents by Inventor Hosadurga K. Shobha
Hosadurga K. Shobha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20140256153Abstract: Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and other components of semiconductor nano-devices. For example, a semiconductor structure includes a multilayer dielectric structure having multiple layers of dielectric material including one or more SiN layers and one or more SiNO layers. The layers of dielectric material in the multilayer dielectric structure have a thickness in a range of about 0.5 nanometers to about 3 nanometers.Type: ApplicationFiled: August 28, 2013Publication date: September 11, 2014Applicant: International Business Machines CorporationInventors: Alfred Grill, Seth L. Knupp, Son V. Nguyen, Vamsi K. Paruchuri, Deepika Priyadarshini, Hosadurga K. Shobha
-
Publication number: 20140252502Abstract: Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and other components of semiconductor nano-devices. For example, a semiconductor structure includes a multilayer dielectric structure having multiple layers of dielectric material including one or more SiN layers and one or more SiNO layers. The layers of dielectric material in the multilayer dielectric structure have a thickness in a range of about 0.5 nanometers to about 3 nanometers.Type: ApplicationFiled: March 11, 2013Publication date: September 11, 2014Applicant: International Business Machines CorporationInventors: Alfred Grill, Seth L. Knupp, Son V. Nguyen, Vamsi K. Paruchuri, Deepika Priyadarshini, Hosadurga K. Shobha
-
Publication number: 20140179119Abstract: A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.Type: ApplicationFiled: February 28, 2014Publication date: June 26, 2014Applicants: GLOBALFOUNDRIES, INC., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alfred Grill, Joshua L. Herman, Son Nguyen, E. Todd Ryan, Hosadurga K. Shobha
-
Patent number: 8664109Abstract: A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.Type: GrantFiled: April 11, 2012Date of Patent: March 4, 2014Assignees: International Business Machines Corporation, Global Foundries, Inc.Inventors: Alfred Grill, Joshua L. Herman, Son Nguyen, E. Todd Ryan, Hosadurga K. Shobha
-
Patent number: 8492289Abstract: A method of forming a barrier layer for metal interconnects of an integrated circuit device includes forming a first cap layer over a top surface of a conductive line of the integrated circuit device in a manner that facilitates a controllable dose of oxygen provided to the top surface of the conductive line, the conductive line comprising a metal formed over a seed layer that is an impurity alloy of the metal; and annealing the integrated circuit device so as to combine diffused impurity atoms of the seed layer with the controllable dose of oxygen, thereby forming an impurity oxide layer at an interface between the first cap layer and the top surface of the conductive line.Type: GrantFiled: September 15, 2010Date of Patent: July 23, 2013Assignee: International Business Machines CorporationInventors: Daniel C. Edelstein, Takeshi Nogami, Hosadurga K. Shobha
-
Publication number: 20120202354Abstract: A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.Type: ApplicationFiled: April 11, 2012Publication date: August 9, 2012Applicants: Globalfoundries Inc., International Business Machines CorporationInventors: Alfred Grill, Joshua L. Herman, Son Nguyen, E. Todd Ryan, Hosadurga K. Shobha
-
Publication number: 20120193767Abstract: A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure.Type: ApplicationFiled: April 11, 2012Publication date: August 2, 2012Applicants: Globalfoundries Inc., International Business Machines CorporationInventors: Alfred Grill, Joshua L. Herman, Son Nguyen, E. Todd Ryan, Hosadurga K. Shobha
-
Patent number: 8212337Abstract: A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.Type: GrantFiled: January 10, 2008Date of Patent: July 3, 2012Assignees: International Business Machines Corporation, Globalfoundries Inc.Inventors: Alfred Grill, Joshua L. Herman, Son Nguyen, E. Todd Ryan, Hosadurga K. Shobha
-
Publication number: 20120061838Abstract: A method of forming a barrier layer for metal interconnects of an integrated circuit device includes forming a first cap layer over a top surface of a conductive line of the integrated circuit device in a manner that facilitates a controllable dose of oxygen provided to the top surface of the conductive line, the conductive line comprising a metal formed over a seed layer that is an impurity alloy of the metal; and annealing the integrated circuit device so as to combine diffused impurity atoms of the seed layer with the controllable dose of oxygen, thereby forming an impurity oxide layer at an interface between the first cap layer and the top surface of the conductive line.Type: ApplicationFiled: September 15, 2010Publication date: March 15, 2012Applicant: International Business Machines CorporationInventors: Daniel C. Edelstein, Takeshi Nogami, Hosadurga K. Shobha
-
Patent number: 8129843Abstract: Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.Type: GrantFiled: August 10, 2010Date of Patent: March 6, 2012Assignee: International Business Machines CorporationInventors: John C. Arnold, Sampath Purushothaman, Muthumanickam Sankarapandian, Hosadurga K. Shobha, Terry A. Spooner
-
Publication number: 20100320617Abstract: Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.Type: ApplicationFiled: August 10, 2010Publication date: December 23, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John C. Arnold, Sampath Purushothaman, Muthumanickam Sankarapandian, Hosadurga K. Shobha, Terry A. Spooner
-
Patent number: 7781332Abstract: Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.Type: GrantFiled: September 19, 2007Date of Patent: August 24, 2010Assignee: International Business Machines CorporationInventors: John C. Arnold, Sampath Purushothaman, Muthumanickam Sankarapandian, Hosadurga K. Shobha, Terry A. Spooner
-
Publication number: 20090179306Abstract: A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.Type: ApplicationFiled: January 10, 2008Publication date: July 16, 2009Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, ADVANCED MICRO DEVICES, INC.Inventors: Alfred Grill, Joshua L. Herman, Son Nguyen, E. Todd Ryan, Hosadurga K. Shobha
-
Publication number: 20090072401Abstract: Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.Type: ApplicationFiled: September 19, 2007Publication date: March 19, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John C. Arnold, Sampath Purushothaman, Muthumanickam Sankarapandian, Hosadurga K. Shobha, Terry A. Spooner
-
Publication number: 20080173985Abstract: A dielectric cap and related methods are disclosed. In one embodiment, the dielectric cap includes a dielectric material having an optical band gap (e.g. greater than about 3.0 electron-Volts) to substantially block ultraviolet radiation during a curing treatment, and including nitrogen with electron donor, double bond electrons.Type: ApplicationFiled: January 24, 2007Publication date: July 24, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael P. Belyansky, Griselda Bonilla, Xiao Hu Liu, Son Van Nguyen, Thomas M. Shaw, Hosadurga K. Shobha, Daewon Yang
-
Patent number: 7375178Abstract: High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.Type: GrantFiled: June 27, 2006Date of Patent: May 20, 2008Assignee: Essilor InternationalInventors: Hosadurga K. Shobha, Venkat Sekharipuram, James E. McGrath, Atul Bhatnagar
-
Patent number: 7067083Abstract: High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.Type: GrantFiled: April 13, 2005Date of Patent: June 27, 2006Assignees: Essilor International (Compagnie Generale D'Optique), Virginia Tech Intellectual Properties, Inc.Inventors: Venkat Sekharipuram, Hosadurga K. Shobha, James E. McGrath, Atul Bhatnagar
-
Patent number: 6943221Abstract: High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.Type: GrantFiled: August 18, 2003Date of Patent: September 13, 2005Assignee: Johnson & Johnson Vision Care, Inc.Inventors: Hosadurga K. Shobha, Venkat Sekharipuram, James E. McGrath, Atul Bhatnagar
-
Patent number: 6653439Abstract: High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.Type: GrantFiled: June 22, 2001Date of Patent: November 25, 2003Assignees: Johnson & Johnson Vision Care, Inc., Virginia Tech Intellectual Properties Inc.Inventors: Hosadurga K. Shobha, Venkat Sekharipuram, James E. McGrath, Atul Bhatnagar
-
Publication number: 20020058779Abstract: High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.Type: ApplicationFiled: June 22, 2001Publication date: May 16, 2002Applicant: Johnson & Johnson Vision Products, Inc., and Virginia Tech Intellectual Properties, Inc.Inventors: Hosadurga K. Shobha, Venkat Sekharipuram, James E. McGrath, Atul Bhatnagar