Patents by Inventor Hotaka Maruyama
Hotaka Maruyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230238461Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.Type: ApplicationFiled: March 29, 2023Publication date: July 27, 2023Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Masayuki SAKAKURA, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
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Patent number: 11626521Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.Type: GrantFiled: October 29, 2020Date of Patent: April 11, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Publication number: 20230006164Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.Type: ApplicationFiled: September 9, 2022Publication date: January 5, 2023Inventors: Shingo EGUCHI, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
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Patent number: 11469387Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.Type: GrantFiled: October 7, 2021Date of Patent: October 11, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Publication number: 20220029120Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.Type: ApplicationFiled: October 7, 2021Publication date: January 27, 2022Inventors: Shingo EGUCHI, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
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Patent number: 11171298Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.Type: GrantFiled: July 1, 2019Date of Patent: November 9, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Patent number: 11024747Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.Type: GrantFiled: March 19, 2020Date of Patent: June 1, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Publication number: 20210074862Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.Type: ApplicationFiled: October 29, 2020Publication date: March 11, 2021Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Masayuki SAKAKURA, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
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Patent number: 10720328Abstract: An etching method for etching an etching target film using a first organic film processed to have a plurality of line patterns formed on the etching target film, an oxide film conformally formed on a front surface of the etching target film so as to provide a space between adjacent line patterns, and a second organic film formed to embed the space, includes etching back the second organic film and the oxide film using an etching gas whose etching selection ratio is adjusted for the second organic film based on a line width and a width of the space so as to cause an upper surface of the first organic film to be exposed, removing the oxide film between the line pattern and the space, and etching the etching target film using the first organic film and the second organic film as a mask.Type: GrantFiled: January 30, 2019Date of Patent: July 21, 2020Assignee: Tokyo Electron LimitedInventors: Hotaka Maruyama, Katsunori Tanaka
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Publication number: 20200220029Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.Type: ApplicationFiled: March 19, 2020Publication date: July 9, 2020Inventors: Shunpei YAMAZAKI, Junichiro SAKATA, Masayuki SAKAKURA, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
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Patent number: 10672915Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.Type: GrantFiled: July 12, 2016Date of Patent: June 2, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Publication number: 20190326538Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.Type: ApplicationFiled: July 1, 2019Publication date: October 24, 2019Inventors: Shingo EGUCHI, Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
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Patent number: 10374184Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.Type: GrantFiled: October 24, 2016Date of Patent: August 6, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shingo Eguchi, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Publication number: 20190237332Abstract: An etching method for etching an etching target film using a first organic film processed to have a plurality of line patterns formed on the etching target film, an oxide film conformally formed on a front surface of the etching target film so as to provide a space between adjacent line patterns, and a second organic film formed to embed the space, includes etching back the second organic film and the oxide film using an etching gas whose etching selection ratio is adjusted for the second organic film based on a line width and a width of the space so as to cause an upper surface of the first organic film to be exposed, removing the oxide film between the line pattern and the space, and etching the etching target film using the first organic film and the second organic film as a mask.Type: ApplicationFiled: January 30, 2019Publication date: August 1, 2019Inventors: Hotaka MARUYAMA, Katsunori TANAKA
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Patent number: 10297679Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.Type: GrantFiled: February 5, 2018Date of Patent: May 21, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Patent number: 10243005Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.Type: GrantFiled: September 15, 2016Date of Patent: March 26, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Publication number: 20180158932Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.Type: ApplicationFiled: February 5, 2018Publication date: June 7, 2018Inventors: Yoshiaki OIKAWA, Kenichi OKAZAKI, Hotaka MARUYAMA
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Patent number: 9887276Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.Type: GrantFiled: December 16, 2013Date of Patent: February 6, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
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Patent number: 9865471Abstract: A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.Type: GrantFiled: April 20, 2016Date of Patent: January 9, 2018Assignee: Tokyo Electron LimitedInventors: Gaku Shimoda, Hotaka Maruyama, Takanori Sato, Masafumi Urakawa, Masahiro Ogasawara
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Patent number: 9837442Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.Type: GrantFiled: August 25, 2016Date of Patent: December 5, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama, Masashi Tsubuku