Abstract: A system and method is available for fabricating a field emitter device, where in an emitter material, such as copper, is deposited over a resistive layer which has been deposited upon a substrate. Two ion beam sources are utilized. The first ion beam source is directed at a target material, such as molybdenum, for sputtering molybdenum onto the emitter material. The second ion beam source is utilized to etch the emitter material to produce cones or micro-tips. A low work function material, such as amorphous diamond, is then deposited over the micro-tips.

Abstract: A solid state laser is provided having as the laser medium diamond and an optically active dopant element which is found to lase in the solid matrix. The dopant is preferably titanium, vanadium, chromium, iron, cobalt, nickel, zinc, zirconium, niobium, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and uranium. Erbium is especially preferred. The laser medium is formed as dopants are added by ion implantation to a diamond crystal as the diamond is grown by chemical vapor deposition.

Abstract: A material growing by deposition is exposed to a low energy beam of ionized dopant. The ion beam energy is sufficient to implant the dopant in the growing surface of the material. This doping method will work well for any dopant that is substantially immobile in the material at the temperature necessary for deposition growth.

Abstract: A diamond growing by chemical vapor deposition is exposed to a low energy beam of ionized dopant. The ion beam energy is sufficient to implant the dopant in the growing surface of the diamond. This doping method will work well for any dopant that is substantially immobile in the diamond at the temperature necessary for deposition growth.

Abstract: Disclosed is a method and apparatus for the measuring of isotopic ratio determination of elements on metallic, semi-conducting or insulating surface. The method involves pulsing an ion beam of at least about 2 KeV at a grazing incidence to impinge upon the surface of the sample. The ions which are recoiled off the surface of the sample are detected with a high resolution time-of-flight mass spectrometer which is comprised of at least one linear field free drift tube and at least one toroidal or spherical energy filter with a +/-V polarization to detect positive or negative ions. The method is applicable to a wide variety of elements from the periodic table and the ion source can be selected from a wide variety of ions which can be bombarding onto a sample. There are further methods for measuring of the ions under high pressure mass spectrometry, at pressures as high as 1 Torr. The apparatus can be adapted for the quantitation measurement of the elements on the surface under the high pressure conditions.