Abstract: A polishing apparatus polishes a substrate by bringing the substrate into sliding contact with a polishing surface. The polishing apparatus includes: a substrate holder having a substrate holding surface for pressing the substrate against the polishing surface and further having a retaining ring arranged so as to surround the substrate and brought into contact with the polishing surface, the retaining ring being configured to be tiltable independently of the substrate holding surface; a rotating mechanism configured to rotate the substrate holder about its own axis; and at least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface. The at least one local load exerting mechanism is arranged so as not to rotate together with the substrate holder.

Abstract: A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that perfo

Abstract: A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that perfo

Abstract: A polishing head system capable of precisely controlling a film-thickness profile of a workpiece, such as a wafer, substrate, or panel, is disclosed. The polishing head system includes a polishing head having a plurality of piezoelectric elements configured to apply pressing forces to a workpiece, and an operation controller configured to determine instruction values of voltages to be applied to the plurality of piezoelectric elements.

Abstract: Polishing uniformity of a surface to be polished of a substrate is improved by appropriately according with a state of the surface to be polished during polishing. A substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, an elevating mechanism for elevating the pad holder 226 with respect to the substrate WF, a swing mechanism for swinging the pad holder 226 in a radial direction of the substrate WF, supporting members 300A and 300B for supporting the polishing pad 222 swung to outside the table 100 by the swing mechanism, and driving mechanisms 310 and 320 for adjusting at least one of a height and a distance to the substrate WF of the supporting member 300 while polishing the substrate WF.

Abstract: To improve uniformity in polishing of a polished surface of a substrate regardless of a tolerance of a diameter of the substrate. A substrate processing apparatus includes a table 100, a pad holder 226, a swing mechanism, a supporting member 300A, 300B, a measuring instrument 400, and a driving mechanism 320. The table 100 supports a substrate WF. The pad holder 226 holds a polishing pad 222. The polishing pad 222 polishes the substrate WF supported to the table 100. The swing mechanism swings the pad holder 226. The supporting member 300A, 300B supports the polishing pad 222 swung to outside the table 100 by the swing mechanism. The measuring instrument 400 is configured to measure a diameter of the substrate WF. The driving mechanism 320 adjusts a position of the supporting member 300A, 300B with respect to the substrate WF supported to the table 100 according to the diameter of the substrate WF measured by the measuring instrument 400.

Abstract: A substrate processing apparatus includes a table, a pad holder, an elevating mechanism, and at least three centering mechanisms. The table is for supporting a substrate. The pad holder is for holding a polishing pad for polishing the substrate supported by the table. The elevating mechanism is for elevating the pad holder with respect to the substrate. The at least three centering mechanisms are for pushing the substrate supported by the table in a center direction of the table to position the substrate. The at least three centering mechanisms each include a rotation shaft arranged in a peripheral area of the table and a centering member mounted to the rotation shaft.

Abstract: The present invention relates to a cyber-physical system for optimizing a simulation model for chemical mechanical polishing based on actual measurement data of chemical mechanical polishing. The chemical mechanical polishing system includes a polishing apparatus (1) for polishing the workpiece (W) and an arithmetic system (47). The arithmetic system (47) includes a simulation model including at least a physical model configured to output an estimated polishing physical quantity including an estimated polishing rate of the workpiece (W). The arithmetic system (47) is configured to: input polishing conditions for the workpiece (W) into the simulation model; output the estimated polishing physical quantity of the workpiece (W) from the simulation model; and determine model parameters of the simulation model that bring the estimated polishing physical quantity closer to a measured polishing physical quantity of the workpiece (W).

Abstract: Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

Abstract: Provided is a substrate holding device used in a substrate polishing apparatus that polishes a substrate using a polishing pad. The substrate holding device includes: a retainer ring configured to hold a peripheral edge of the substrate; and a drive ring fixed to the retainer ring so as to rotate together with the retainer ring. The surface of the retainer ring at the polishing pad side has a convex portion at a position other than an innermost circumference following a shape of the drive ring.

Abstract: One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises: a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

Abstract: A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

Abstract: Polishing uniformity of a surface to be polished of a substrate is improved by appropriately according with a state of the surface to be polished during polishing. A substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, an elevating mechanism for elevating the pad holder 226 with respect to the substrate WF, a swing mechanism for swinging the pad holder 226 in a radial direction of the substrate WF, supporting members 300A and 300B for supporting the polishing pad 222 swung to outside the table 100 by the swing mechanism, and driving mechanisms 310 and 320 for adjusting at least one of a height and a distance to the substrate WF of the supporting member 300 while polishing the substrate WF.

Abstract: A polishing head system capable of precisely controlling a film-thickness profile of a workpiece, such as a wafer, substrate, or panel, is disclosed. The polishing head system includes a polishing head having a plurality of piezoelectric elements configured to apply pressing forces to a workpiece, and an operation controller configured to determine instruction values of voltages to be applied to the plurality of piezoelectric elements.

Abstract: To improve uniformity in polishing of a polished surface of a substrate regardless of a tolerance of a diameter of the substrate. A substrate processing apparatus includes a table 100, a pad holder 226, a swing mechanism, a supporting member 300A, 300B, a measuring instrument 400, and a driving mechanism 320. The table 100 supports a substrate WF. The pad holder 226 holds a polishing pad 222. The polishing pad 222 polishes the substrate WF supported to the table 100. The swing mechanism swings the pad holder 226. The supporting member 300A, 300B supports the polishing pad 222 swung to outside the table 100 by the swing mechanism. The measuring instrument 400 is configured to measure a diameter of the substrate WF. The driving mechanism 320 adjusts a position of the supporting member 300A, 300B with respect to the substrate WF supported to the table 100 according to the diameter of the substrate WF measured by the measuring instrument 400.

Abstract: A polishing apparatus polishes a substrate by bringing the substrate into sliding contact with a polishing surface. The polishing apparatus includes: a substrate holder having a substrate holding surface for pressing the substrate against the polishing surface and further having a retaining ring arranged so as to surround the substrate and brought into contact with the polishing surface, the retaining ring being configured to be tiltable independently of the substrate holding surface; a rotating mechanism configured to rotate the substrate holder about its own axis; and at least one local load exerting mechanism configured to exert a local load on a part of the retaining ring in a direction perpendicular to the polishing surface. The at least one local load exerting mechanism is arranged so as not to rotate together with the substrate holder.

Abstract: Provided is a polishing device for appropriately retaining a polishing member in an appropriate state in polishing. The polishing device for partially polishing a substrate includes a polishing member having a processing surface which comes into contact with the substrate and which is smaller than the substrate, a conditioning member for performing conditioning on the polishing member, a first pressing mechanism for pressing the conditioning member against the polishing member in polishing the substrate, and a control unit for controlling an operation of the polishing device. The control unit is configured to control the first pressing mechanism when the substrate is partially polished by the polishing member.

Abstract: A polishing apparatus capable of precisely controlling a polishing profile, particularly a polishing profile in an edge portion, of a wafer is disclosed. The polishing apparatus includes: a top ring shaft; a housing fixed to the top ring shaft; a flexible membrane configured to press a wafer against a polishing pad; a top ring body configured to hold the flexible membrane; a retaining ring coupled to the top ring body and disposed so as to surround the flexible membrane; a gimbal mechanism configured to allow the top ring body and the retaining ring to tilt with respect to the housing; and a local load exerting mechanism configured to exert a downward local load on a part of the retaining ring.

Abstract: One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

Abstract: Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.