Abstract: The present invention relates to a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against a polishing surface. The substrate holding apparatus comprises a top ring body for holding a substrate, an elastic pad for being brought into contact with the substrate, and a support member for supporting the elastic pad. The substrate holding apparatus further comprises a contact member mounted on a lower surface of the support member and disposed in a space formed by the elastic pad and the support member. The contact member has an elastic membrane for being brought into contact with the elastic pad. A first pressure chamber is defined in the contact member, and a second pressure chamber is defined outside of the contact member. The substrate holding apparatus further comprises a fluid source for independently supplying a fluid into, or creating a vacuum in, the first pressure chamber and the second pressure chamber.

Abstract: There is provided an electrolytic processing apparatus and method which, while omitting a CMP treatment entirely or reducing a load upon a CMP treatment to the least possible extent, can process a conductive material formed in the surface of a substrate to flatten the material, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The electrolytic processing apparatus includes: a pair of electrodes disposed at a given distance; an ion exchange disposed between the pair of electrodes; and a liquid supply section for supplying a liquid between the pair of electrodes. The electrolytic processing method includes: providing an electrode section having, a pair of electrodes disposed at a given distance with an ion exchanger being interposed: and bringing the electrode into contact with or close to a workpiece while supplying a fluid to the ion exchanger, thereby processing the surface of the workpiece.

Abstract: There is a provided a substrate processing apparatus that can perform an electrolytic processing, which is different from a common, conventional etching, to remove (clean off) a conductive material (film) formed on or adhering to a bevel portion, etc. of a substrate or process a peripheral portion of a substrate through an electrochemical action. The substrate processing apparatus includes: an electrode section having a plurality of electrodes which are laminated with insulators being interposed, and having a holding portion which is to be opposed to a peripheral portion of a substrate: an ion exchanger disposed in the holding portion of the electrode section; a liquid supply section for supplying a liquid to the holding position of the electrode section; and a power source for applying a voltage to the electrodes of the electrode section so that the electrodes alternately have different polarities.

Abstract: There is provided a substrate polishing machine which comprises a polishing surface and a substrate carrier for holding a substrate and bringing it into contact with the polishing surface. The substrate carrier comprises a carrier body, a substrate holding member for holding a substrate with a surface of the substrate to be polished being directed towards the polishing surface. The substrate holding member is mounted on the carrier body in such a manner that the substrate holding member is movable both towards and away from the polishing surface. The substrate polishing machine further comprises a substrate holding member positioning device provided on a side of the substrate holding member opposite to that used for holding the substrate. The substrate holding member positioning device has a flexible member which defines a chamber, and which, upon introduction of a non-compressible fluid, is expanded in a direction towards the polishing surface.

Abstract: The present invention alleviates workloads in chemical-mechanical polishing (CMP) by replacing all or a portion of the substrate processing by means of chemical-mechanical polishing with electrolytic processing using deionized water, ultrapure water or the like and enables processing insuring the higher flatness with the higher efficiency.

Abstract: The present invention provides an electrolytic processing apparatus which, while eliminating a CMP processing entirely or reducing a load on a CMP processing to the least possible extent, can process and flatten a conductive material formed in the surface of a substrate, or can remove (clean) extraneous matter adhering to the surface of a workpiece such as a substrate. The present invention includes an electrode section including a plurality of electrode members disposed in parallel, each electrode member comprising an electrode and an ion exchanger covering the surface of the electrode, a holder for holding a workpiece, which is capable of bringing the workpiece close to or into contact with the ion exchanger of the electrode member, and a power source to be connected to the electrode of each electrode member of the electrode section. The ion exchanger of the electrode member comprises an ion exchanger having an excellent surface smoothness and an ion exchanger having a large ion exchange capacity.

Abstract: There is provided a method and device for regenerating an ion exchanger which can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.

Abstract: There is provided an electrolytic processing device including: a processing electrode brought into contact with or close to a workpiece; a feeding electrode for supplying electricity to the workpiece; an ion exchanger disposed in at least one of the spaces between the workpiece and the processing electrode, and between the workpiece and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a liquid supply section for supplying a liquid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present. A substrate processing apparatus having the electrolytic processing device is also provided.

Abstract: A workpiece carrier holds a workpiece such as a semiconductor wafer and presses the workpiece against a polishing surface on a polishing table. The workpiece carrier has a top ring body for holding the workpiece, and a retainer ring for holding an outer circumferential edge of the workpiece. A fluid chamber which is supplied with a pressurized fluid such as a compressed air is provided in the top ring body and covered by a resilient membrane. A plurality of pressing members are fixed to the resilient membrane for applying a pressing force through the resilient membrane to the workpiece under the pressure of the fluid in the fluid chamber.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface, a holding surface of the top ring for holding the workpiece, and a retainer ring for retaining the workpiece within the holding surface of the top ring. The holding surface is deformable by fluid having variable pressure, and the retainer ring presses the polishing surface under a variable pressing force.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring for holding a workpiece and pressing the workpiece against the abrasive cloth under a first pressing force to polish the workpiece. A guide ring is vertically movably disposed around the top ring, and pressed against the abrasive cloth under a variable second pressing force. The first and second pressing forces are variable independently of each other, and the second pressing force is determined based on the first pressing force.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with a polishing cloth mounted on an upper surface thereof, and a top ring for holding a workpiece and pressing the workpiece against the polishing cloth under a first pressing force to polish the workpiece. The top ring has a recess defined therein for accommodating the workpiece therein. A presser ring is vertically movably disposed around the top ring, and is pressed against the polishing cloth under a variable second pressing force. The first and second pressing forces are variable independently of each other, and the second pressing force is determined based on the first pressing force. Relative rotation between the top ring and the presser ring is achieved during polishing.

Abstract: A polishing apparatus can improve the uniformity of thickness within a workpiece or reduce thickness variation between serially polished workpieces. The polishing apparatus comprises a polishing unit having a polishing tool for providing a polishing surface and a workpiece holding device for holding the workpiece. A polishing solution or liquid supplying device is provided for supplying a polishing solution or liquid into a polishing interface between the surface of the workpiece and the polishing surface. A temperature of the polishing interface is controlled according to at least an ambient temperature of a polishing space surrounding the polishing unit, as a variable parameter.

Abstract: The present invention relates to a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against a polishing surface. The substrate holding apparatus comprises a top ring body for holding a substrate, an elastic pad brought into contact with the substrate, and a support member for supporting the elastic pad. The substrate holding apparatus further comprises a contact member mounted on a lower surface of the support member and disposed in a space formed by the elastic pad and the support member. The contact member has an elastic membrane brought into contact with the elastic pad. A first pressure chamber is defined in the contact member, and a second pressure chamber is defined outside of the contact member. The substrate holding apparatus further comprises a fluid source for independently supplying a fluid into or creating a vacuum in the first pressure chamber and the second pressure chamber.

Abstract: A substrate holding apparatus comprises a substrate holder body having a substrate holding side facing a polishing surface and holding a substrate on the substrate holding side and a retainer ring fixedly secured to the substrate holder body. The retainer ring is arranged to surround an outer periphery of the substrate held by the substrate holder body so that the retainer ring engages with the polishing surface radially outside the substrate as the polishing of the substrate is effected. The substrate holder body is provided with a membrane having inside and outside surfaces. The inside surface cooperates with a surface of the substrate holder body to define a fluid pressure chamber to which a fluid pressure is applied. The outer surface engages with the substrate held by the substrate holder body.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with a polishing cloth mounted on an upper surface thereof, and a top ring for holding a workpiece and pressing the workpiece against the polishing cloth under a first pressing force to polish the workpiece. The top ring has a recess defined therein for accommodating the workpiece therein. A presser ring is vertically movably disposed around the top ring, and is pressed against the polishing cloth under a variable second pressing force. The first and second pressing forces are variable independently of each other, and the second pressing force is determined based on the first pressing force. Relative rotation between the top ring and the presser ring is achieved during polishing.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring for holding a workpiece and pressing the workpiece against the abrasive cloth under a first pressing force to polish the workpiece. A guide ring is vertically movably disposed around the top ring, and pressed against the abrasive cloth under a variable second pressing force. The first and second pressing forces are variable independently of each other, and the second pressing force is determined based on the first pressing force.

Abstract: A polishing apparatus for polishing a workpiece to a flat mirror finish includes a turntable with a polishing cloth attached to an upper surface thereof, and a top ring for holding a workpiece thereon and pressing the workpiece against the polishing cloth to polish the workpiece. A retainer ring or a presser ring is disposed around the top ring. The retainer ring or the presser ring is vertically movable independently of the top ring, and pressed against the polishing cloth by a pressing mechanism. A stabilizing mechanism is disposed between an inner circumferential surface of the retainer ring or the presser ring, and an outer circumferential surface of the top ring, for holding the top ring substantially stabilized within the retainer ring or the presser ring.

Abstract: A polishing apparatus is provided which improves uniformity across the surface of a polished wafer. The apparatus includes a wafer carrier, a guide ring coupled to a lower portion of the wafer carrier, a circular plate coupled to a first inner circumference portion of the guide ring distant from the wafer carrier, and a cavity, formed within an area bounded by the lower portion of the wafer carrier, an inner circumference of the circular plate, and a second inner circumference portion of the guide ring between the circular plate and the lower portion of the wafer carrier, the circular plate holding the wafer to be polished in the cavity.

Abstract: A polishing apparatus for polishing a surface of an object such as a semiconductor wafer includes a turntable having a polishing cloth mounted on an upper surface thereof, a top ring for holding and pressing the object against the polishing cloth, and a plurality of radially arranged nozzles for supplying a polishing solution, containing abrasive material, of different concentrations that differ along a radial direction of the polishing cloth.