Abstract: The present disclosure provides an optical element driving mechanism, which includes a first movable part, a fixed assembly, a first driving assembly and a locking assembly. The first movable part includes an optical element. The fixed assembly has a first opening, and the first movable part is movable relative to the fixed assembly. The first driving assembly is configured to drive the first movable part to move relative to the fixed assembly, so that the optical element selectively overlaps the first opening. The locking assembly is configured to fix the first movable part at a first position relative to the fixed assembly temporarily.

Abstract: A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.

Abstract: A modification method of an image brightness of a photographing system includes: providing a corresponding relationship data; detecting a location data of a moving object by a moving object detection device; obtaining a predetermined image coordinate area corresponding to the location data from the corresponding relationship data according to the location data; obtaining a first image captured by an image capturing device; calculating a first global exposure parameter of the first image and a first local exposure parameter of a first local image, which corresponds to the predetermined image coordinate area, of the first image; obtaining another image captured by the image capturing device, wherein a local image of the another image corresponding to the predetermined image coordinate area has a local exposure parameter being closer to an ideal exposure parameter than the first local exposure parameter; and outputting the another image as a frame of a video.

Abstract: A physical vapor deposition (PVD) system includes: a chamber body; a substrate support disposed within the chamber body and capable of supporting a substrate; a PVD target; and a target profile monitoring subsystem. The PVD target includes: a target plate comprising a target material; and a backing plate attached to the target plate and comprising: a central section; and a peripheral section circumferentially surrounding the central section in a horizontal plane. The peripheral section has a first thickness in a vertical direction, the central section has a second thickness in the vertical direction, and the first thickness is larger than the second thickness. The target profile monitoring subsystem is configured to monitor usage of the target plate.

Abstract: A wafer chuck assembly is provided. In one embodiment, the chuck assembly comprises a hub, a plurality of arms mounted to the hub and a plurality of holders. Each arm extends outwardly from the hub, and each arm has a proximal end adjacent the hub and a distal end remote from the hub. Each holder is mounted at the distal end of each respective arm, and each holder has a plurality of support pins configured to support a wafer.

Abstract: A deposition system is provided capable of extending the chamber running time by preventing the target and other components from deformation due to thermal stress from the sputtering process by maintaining the temperature within the predetermined temperature range. The deposition system includes a substrate process chamber, a target within the substrate process chamber, and a plurality of grooves formed on the target in a circular formation. The plurality of grooves includes a first groove on a center portion of the target and a second groove on a periphery portion of the target.

Abstract: A PVD target structure is provided. The PVD target structure includes a target body having a first side and a second side opposite to the first side. The first side of the target body includes a first region and a second region surrounding the first region. The second region comprises a knurled profile. A method for preparing PVD target structure is also provided.

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, and a gate structure. The gate structure includes a high-k gate oxide layer disposed on the fin structure, a diffusion barrier layer disposed on the high-k gate oxide layer, and a metal layer disposed on the diffusion barrier layer. The semiconductor device further includes a gate spacer disposed on the diffusion barrier layer and a source/drain (S/D) region disposed on the fin structure. A sidewall of the S/D region is in contact with a sidewall of the high-k gate oxide layer.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

Abstract: Various embodiments of the present application are directed toward an adjustable wafer chuck. The adjustable wafer chuck is configured to hold a wafer. The adjustable wafer chuck comprises a base portion and a pad portion. The base portion comprises a plurality of adjustable base structures. The pad portion is disposed on a first side of the base portion. The pad portion comprises a plurality of contact pads disposed on the plurality of adjustable base structures. Each of the adjustable base structures are configured to move along a plane in a first direction and configured to move along the plane in a second direction that is opposite the first direction.

Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.

Abstract: The present disclosure provides an optical element driving mechanism, which includes a movable part, a fixed assembly, and a driving assembly. The movable part is configured to be connected to an optical element. The fixed assembly has an opening for allowing a light beam along an optical axis to pass, and the movable part is movable relative to the fixed assembly. The driving assembly is configured to drive the movable part to move relative to the fixed assembly. The optical element driving mechanism further includes a recovery assembly configured to position the movable part in a first position when the movable part is not driven by the driving assembly.

Abstract: A system is provided. The system includes: a semiconductor processing system comprising: a semiconductor processing apparatus configured to perform at least one semiconductor fabrication process; and a load port attached to the semiconductor processing apparatus and configured to load a wafer contained in a wafer container to the semiconductor processing apparatus; and a load port first aid platform in electrical communication with the load port, wherein the load port first aid platform controls the load port when the semiconductor processing apparatus malfunctions.

Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.

Abstract: An optical system is provided, including a housing, an optical element, a first movable part, a driving assembly, and a temperature adjusting module. The optical element is disposed on the housing. The first movable part is movably connected to the housing. The driving assembly is configured to drive the first movable part to move relative to the housing. The temperature adjusting module is disposed in the housing for adjusting the temperature of the optical system.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A deposition system is provided capable of extending the chamber running time by preventing the target and other components from deformation due to thermal stress from the sputtering process by maintaining the temperature within the predetermined temperature range. The deposition system includes a substrate process chamber, a target within the substrate process chamber, and a plurality of grooves formed on the target in a circular formation. The plurality of grooves includes a first groove on a center portion of the target and a second groove on a periphery portion of the target.

Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

Abstract: A power conversion system with ripple injection includes an AC-DC conversion unit, a voltage regulation unit, at least one DC-DC conversion unit, at least one load, and a first control unit. The voltage regulation unit provides a DC link and receives one portion of an input power as an energy storage power. Each DC-DC conversion unit receives the other portion of the input power as an output power. The at least one load correspondingly receives the output power for being supplied power. The first control unit is coupled to the DC link, the at least one DC-DC conversion unit, and the at least one load. The first control unit controls the at least one DC-DC conversion unit to adjust a magnitude of a ripple of the output power to perform a ripple injection operation according to a magnitude of a ripple of the input power.