Abstract: A manufacturing method of a light-emitting diode package structure includes the steps as follows. A substrate is provided. At least one light-emitting diode and at least one dummy plug are arranged on the substrate in an arranging step. The light-emitting diode and the dummy plug are covered by the patternable material in a coating step. A portion of the light-emitting diode and a portion of the dummy plug are exposed in a patterning step. A conductive layer is in contact with and electrically connected to the light-emitting diode and the dummy plug in a deposition step. A protective layer is formed on the conductive layer in a protective layer forming step. The substrate is separated and a light-emitting diode package structure is formed in a releasing step. A material of the conductive layer includes an indium tin oxide material or a transparent conductive material.

Abstract: An encapsulation process method for wafer-level light-emitting diode dies is provided, in which a wafer structure having a plurality of light-emitting diode dies thereon is adhered to a temporary substrate, and by sequentially performing a laser cutting and a laser punch-through process, the light-emitting diode die turns to be conductive. Then, a transparent conductive film is sputtered thereon the die, and black matrix photoresist and quantum dot color filter are further disposed for performing a color conversion process. After that, the light-emitting diode dies are divided into package structures, and a glue removal process is used to separate the wafer structure from the temporary substrate, so that the wafer structure can be transferred to a target substrate. By employing the present invention, the conventional carrier board can be omitted, and the packaging yield of the vertical light emitting diode die packages is certainly optimized.

Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.

Abstract: A laser diode includes an original substrate having a substrate coefficient of thermal expansion, an epitaxy structure formed on the original substrate, and a composite multi-layer metal board disposed below the original substrate and at least including a first metal layer and a second metal layer. The first metal layer and the second metal layer are stacked, a material of the first metal layer is different from a material of the second metal layer, and the composite multi-layer metal board has a modified coefficient of thermal expansion. The original substrate has an initial thickness as the epitaxy structure is grown thereon, the original substrate is thinned to a combining thickness for attaching the composite multi-layer metal board, and the modified coefficient of thermal expansion of the composite multi-layer metal board is proximate to the substrate coefficient of thermal expansion.

Abstract: A vertical light emitting diode die packaging method is provided, including a plurality of following steps. At first, a plurality of drill hole is formed in a substrate and a first metal material is used to fill the drill holes. Next, disposing and fixing a plurality of vertical light emitting diode die on the substrate through a second metal material, and a transparent glue is used to cover thereon. A laser process is then employed to dissolve the transparent glue for forming ditches. And, a conductive liquid is applied to fill the ditches and an insulating glue is provided to embrace and encapsulate the vertical light emitting diode dies. By employing the packaging method of the present invention, the current external wire bonding process can be effectively replaced, thereby die size miniaturization as well as packaging yield of the vertical light emitting diode dies are believed to be optimized.

Abstract: A bonding and transferring method for die package structures is provided, including providing a die package structure which has a positioning adhesive disposed thereon, and providing a vibration base having at least one cavity corresponding to the positioning adhesive. By alignment of the positioning adhesive and the cavity, the die package structure can be positioned into the vibration base. A target substrate is further provided and bonded with the vibration base having the die package structure disposed thereon through a metal material. And a laser process is then performed to melt the metal material. At last, the vibration base and the positioning adhesive are removed so the die package structure is successfully bonded and transferred onto the target substrate. By employing the proposed process method of the present invention, rapid mass transfer result is accomplished, and the packaging yield of vertical light emitting diode die package structures is optimized.

Abstract: A via-filling method of a TGV substrate includes steps: filling a plurality of metal balls into a plurality of vias of the TGV substrate; using a heating process to melt the plurality of metal balls to form a liquid-state metal; and cooling down the liquid-state metal to form a solid-state metal inside the plurality of vias. Because the method needn't use solvents or fluxes, the solid-state metal inside the plurality of vias have better electric conductivity.

Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.

Abstract: A magnetic LED die transferring device includes a substrate, a plurality of magnetic members and a vibrating mechanism. The substrate includes a plurality of die locating areas arranged in intervals, and each of the die locating areas includes a locating surface. Each of the magnetic members corresponds to each of the die locating areas and includes an alignment N-pole and an alignment S-pole. The vibrating mechanism is coupled to the substrate. The N-pole and the S-pole of each of the magnetic LED dice are used to be attracted by each of the alignment N-poles and each of the alignment S-poles, respectively, to allow each of the magnetic LED dice to be transferred and aligned to each of the die locating areas.

Abstract: A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology.

Abstract: A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes.

Abstract: A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology.

Abstract: A method for fabricating a vertical light-emitting diode includes: providing a growth substrate, wherein an epitaxial layer is formed on the growth substrate; forming a metal combined substrate on the epitaxial layer, wherein the metal combined substrate comprises two first metal layers and a second metal layer therebetween, one of the first metal layers is close to the epitaxial layer, and another of the first metal layers is far away from the epitaxial layer; removing the growth substrate; forming a contact metal layer on the epitaxial layer; and removing the second metal layer and the first metal layer far away from the epitaxial layer and leaving the first metal layer close to the epitaxial layer. The vertical light-emitting diode, fabricated by the method, has a thinner thickness, a stronger mechanical strength, a higher light intensity, and a better heat-dissipating effect.

Abstract: A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology.

Abstract: An alignment module and alignment method for transferring magnetic light-emitting die are provided, including a backplane having at least one cavity, a magnetic pull device and magnetic light-emitting die. The magnetic pull device is located below the cavity and disposed correspondingly to the cavity. The magnetic light-emitting die includes a magnetic metallic substrate and a peripheral electrode formed on the magnetic metallic substrate. The peripheral electrode is surrounding on the magnetic metallic substrate and formed adjacent to an inner edge of the magnetic metallic substrate. Depth of the cavity is designed as equal to a thickness of the magnetic metallic substrate such that the die is accommodated and aligning transferred to the backplane by using the cavity and magnetic pull device. By employing the proposed die alignment techniques, accurate alignment result is achieved and thereby the present invention is applied perfectly for industrial mass transfer technology.

Abstract: A VOC removal system removes VOCs from an exhaust fluid of a semiconductor process. The VOC removal system measures current VOC removal parameters and passes them to an analysis model trained with a machine learning process. The analysis model predicts a future VOC removal efficiency based on the current VOC removal parameters. The analysis model generates adjustment parameters based on the current VOC removal parameters and the predicted future VOC removal efficiency. A control system adjusts the VOC removal system based on the adjustment parameters.

Abstract: A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes.

Abstract: An alignment module and alignment method for transferring magnetic light-emitting die are provided, including a backplane having at least one cavity, a magnetic pull device and magnetic light-emitting die. The magnetic pull device is located below the cavity and disposed correspondingly to the cavity. The magnetic light-emitting die includes a magnetic metallic substrate and a peripheral electrode formed on the magnetic metallic substrate. The peripheral electrode is surrounding on the magnetic metallic substrate and formed adjacent to an inner edge of the magnetic metallic substrate. Depth of the cavity is designed as equal to a thickness of the magnetic metallic substrate such that the die is accommodated and aligning transferred to the backplane by using the cavity and magnetic pull device. By employing the proposed die alignment techniques, accurate alignment result is achieved and thereby the present invention is applied perfectly for industrial mass transfer technology.

Abstract: A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology.

Abstract: The present disclosure provides a semiconductor substrate, including a first dielectric layer with a first surface and a second surface, a first conductive via extending between the first surface and the second surface, a first patterned conductive layer on the first surface, and a second patterned conductive layer on the second surface. The first conductive via includes a bottom pattern on the first surface and a second patterned conductive layer on the second surface. The bottom pattern has at least two geometric centers corresponding to at least two geometric patterns, respectively, and a distance between one geometric center and an intersection of the two geometrical patterns is a geometric radius. A distance between the at least two geometric centers is greater than 1.4 times the geometric radius. A method for manufacturing the semiconductor substrate described herein and a semiconductor package structure having the semiconductor substrate are also provided.