Abstract: This disclosure provides systems, methods, and devices for image processing that support enhanced white balancing operations. In a first aspect, a method of image processing includes receiving first image data obtained at a first aperture; determining a first output image frame based on the first image data by applying a first white balancing to at least a portion of the first image data; receiving second image data obtained at a second aperture; and determining a second output image frame based on the second image data by applying a second white balancing based on the first aperture and the second aperture to at least a portion of the second image data. The second white balancing may be based on a first compensation factor based on the first aperture and the second aperture used to adjust the first white balancing. Other aspects and features are also claimed and described.

Abstract: A method for mask data synthesis and mask making includes calibrating an optical proximity correction (OPC) model by adjusting a plurality of parameters including a first parameter and a second parameter, wherein the first parameter indicates a long-range effect caused by an electron-beam lithography tool for making a mask used to manufacture a structure, and the second parameter indicates a geometric feature of a structure or a manufacturing process to make the structure, generating a device layout, calculating a first grid pattern density map of the device layout, generating a long-range correction map, at least based on the calibrated OPC model and the first grid pattern density map of the device layout, and performing an OPC to generate a corrected mask layout, at least based on the generated long-range correction map and the calibrated OPC model.

Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a bottom package having a first sidewall and a second sidewall opposite to each other; a hybrid path layer disposed on the bottom package, wherein the hybrid path layer comprises an optical path layer and an electrical path layer, and at least one optical path of the optical path layer extends from the first sidewall of the bottom package beyond a center of the bottom package; and a plurality of dies bonded onto the hybrid path layer.

Abstract: A display device and a brightness adjustment method thereof are provided. The display device includes multiple light panels and a control circuit. Each light panel includes multiple light-emitting diodes, a driving circuit, and a storage circuit. The driving circuit is used to drive the light-emitting diodes and detect a forward voltage value of at least one light-emitting diode among the light-emitting diodes as a forward voltage value of a corresponding light panel. When a target light panel is used to replace one of the light panels, the control circuit controls forward voltage values of the target light panel and the reference light panel to become consistent.

Abstract: In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.

Abstract: A knob apparatus includes a touch panel, a touch-sensing controller, and a knob. The touch panel has multiple touch-sensing electrodes. The touch-sensing controller is coupled to the touch-sensing electrodes of the touch panel. The touch-sensing controller detects a touch event of the touch panel through the touch-sensing electrodes. The knob has a base and a knob cap. The knob cap is pivoted on the base. The base is attached to the touch panel. Multiple conductive electrodes are disposed at different positions of the base. The touch-sensing controller detects the conductive electrodes of the base of the knob through the touch-sensing electrodes of the touch panel to learn a rotation direction of the knob cap on the base.

Abstract: A light field display module including a light field display layer, an adjustment layer, and an image forming layer is provided. The light field display layer is configured to form a light field image beam. The adjustment layer is disposed on a path of the light field image beam, and configured to adjust the light field image beam. The image forming layer is disposed on the path of the light field image beam from the adjustment layer, and configured to change a position of a light field image by changing a direction of the light field image beam. The image forming layer has multiple optical micro-structures.

Abstract: A method for generating a dynamic neural network includes: utilizing a neural architecture search (NAS) method to obtain a searched result, wherein the searched result comprises a plurality of sub-networks; combining the plurality of sub-networks to generate a combined neural network; and fine-tuning the combined neural network to generate the dynamic neural network.

Abstract: A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device includes a first dielectric layer, a first bonding pad disposed in the first dielectric layer, and a first bonding layer on the first dielectric layer. The second device wafer includes a second dielectric layer, a second bonding layer on the second dielectric layer, and a second bonding pad disposed in the second dielectric layer and extending through the second bonding layer and at least a portion of the first bonding layer. A conductive bonding interface between the first bonding pad and the second bonding pad and a dielectric bonding interface between the first bonding layer and the second bonding layer include a step-height in a direction perpendicular to the dielectric bonding interface and the conductive bonding interface. A height of the step-height is smaller than a thickness of the first bonding layer.

Abstract: A system for dynamically adjusting neural network efficiency of a dynamic neural network running on a device includes a detector and a signal generator. The detector is arranged to detect a change of a status of the device, to generate a trigger signal. The signal generator is arranged to generate a control signal according to the trigger signal, to dynamically adjust the neural network efficiency of the dynamic neural network.

Abstract: A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device includes a first dielectric layer, a first bonding pad disposed in the first dielectric layer, and a first bonding layer on the first dielectric layer. The second device wafer includes a second dielectric layer, a second bonding layer on the second dielectric layer, and a second bonding pad disposed in the second dielectric layer and extending through the second bonding layer and at least a portion of the first bonding layer. A conductive bonding interface between the first bonding pad and the second bonding pad and a dielectric bonding interface between the first bonding layer and the second bonding layer include a step-height in a direction perpendicular to the dielectric bonding interface and the conductive bonding interface.

Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A ventilation system comprises a ventilation fan with a lamp for installing to a ceiling having an installation opening. The ventilation fan comprises a housing, a fan module, a power box, a junction box, a lamp module and a support. The housing has a first opening and an air outlet. The fan module comprises an inlet opening and an outlet opening. The outlet opening communicates with the air outlet. The power box has a first circuit board. The lamp module and the housing are located at opposite sides of the installation opening. The junction box is electrically connected to the first circuit board and the lamp module. The impeller comprises a hub, and a ratio of a height of the hub to a height of the housing is less than 0.5. A ratio of a height of the impeller to a height of the housing is greater than 0.65.

Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)?2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

Abstract: A package includes an electronic die, a photonic die underlying and electronically communicating with the electronic die, a lens disposed on the electronic die, and a prism structure disposed on the lens and optically coupled to the photonic die. The prism structure includes first and second polymer layers, the first polymer layer includes a first curved surface concaving toward the photonic die, the second polymer layer embedded in the first polymer layer includes a second curved surface substantially conforming to the first curved surface, and an outer sidewall of the second polymer layer substantially aligned with an outer sidewall of the first polymer layer.

Abstract: A panel driving device includes a processor. In a first frame, an initial scan signal has an initial scan pulse signal. In a second frame, the initial scan signal has the initial scan pulse signal, and the second frame is located after the first frame. In the second frame, the processor shifts an initial light emitting pulse signal of an initial light emitting signal by the first period and an offset period, and a pulse period of the initial light emitting pulse signal does not overlap a pulse period of the initial scan pulse signal, and the offset period is associated with a frame number.

Abstract: A method for reducing wafer edge defects is provided. The method includes providing a wafer with a central region and an edge region, forming a hard mask layer on the wafer, forming a spacer pattern on the hard mask layer, forming a photoresist layer covering the spacer pattern, performing a wafer edge treatment process on the photoresist layer to form an annular photoresist pattern, using the annular photoresist pattern as an etching mask, and sequentially transferring the exposed spacer pattern to the hard mask layer and the wafer to form a plurality of trenches in the wafer.

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.