Abstract: The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a first transistor gate stack is disposed in a low voltage region defined on a substrate. The first transistor gate stack comprises a first gate electrode and a first gate dielectric separating the first gate electrode from the substrate. A third transistor gate stack is disposed in a high voltage region defined on the substrate. The third transistor gate stack comprises a third gate electrode and a third gate dielectric separating the third gate electrode from the substrate. The third gate dielectric comprises an oxide component and a first interlayer dielectric layer.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a pair of source/drain regions disposed in a semiconductor substrate, where the source/drain regions are laterally spaced. A gate electrode is disposed over the semiconductor substrate between the source/drain regions. Sidewall spacers are disposed over the semiconductor substrate on opposite sides of the gate electrode. A silicide blocking structure is disposed over the sidewalls spacers, where respective sides of the source/drain regions facing the gate electrode are spaced apart from outer sides of the sidewall spacers and are substantially aligned with outer sidewalls of the silicide blocking structure.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a first IC die comprises a first bonding structure and a first interconnect structure over a first semiconductor substrate. A second IC die is disposed over the first IC die and comprises a second bonding structure and a second interconnect structure over a second semiconductor substrate. A seal-ring structure is in the first and second IC dies and extends from the first semiconductor substrate to the second semiconductor substrate. A plurality of through silicon via (TSV) coupling structures is arranged in the peripheral region of the 3D IC along an inner perimeter of the seal-ring structure. The plurality of TSV coupling structures respectively comprises a through silicon via (TSV) disposed in the second semiconductor substrate and electrically coupling to the 3D IC through a stack of TSV wiring layers and inter-wire vias.

Abstract: A method of fabricating a semiconductor structure includes forming an isolation feature in a substrate, removing a portion of the isolation feature and a portion of the substrate underneath the removed portion of the isolation feature to form a trench in the substrate, and forming a trapping feature around a bottom portion of the trench. A first sidewall and a second sidewall of the trench are in direct contact with the isolation feature, and a bottom surface of the trench is below a bottom surface of the isolation feature.

Abstract: The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a first transistor gate stack is disposed in a low voltage region defined on a substrate. The first transistor gate stack comprises a first gate electrode and a first gate dielectric separating the first gate electrode from the substrate. A third transistor gate stack is disposed in a high voltage region defined on the substrate. The third transistor gate stack comprises a third gate electrode and a third gate dielectric separating the third gate electrode from the substrate. The third gate dielectric comprises an oxide component and a first interlayer dielectric layer.

Abstract: Representative methods of manufacturing memory devices include forming a transistor with a gate disposed over a workpiece, and forming an erase gate with a tip portion extending towards the workpiece. The transistor includes a source region and a drain region disposed in the workpiece proximate the gate. The erase gate is coupled to the gate of the transistor.

Abstract: The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a first oxide component is disposed on a substrate within a medium voltage region. A first high-k dielectric component is disposed on the substrate within a low voltage region and a second high-k dielectric component disposed on the first oxide component within the medium voltage region. A first gate electrode separates from the substrate by the first high-k dielectric component. A second gate electrode separates from the substrate by the first oxide component and the second high-k dielectric component.

Abstract: Representative methods of manufacturing memory devices include forming a transistor with a gate disposed over a workpiece, and forming an erase gate with a tip portion extending towards the workpiece. The transistor includes a source region and a drain region disposed in the workpiece proximate the gate. The erase gate is coupled to the gate of the transistor.

Abstract: A silicon substrate with a GaN-based device and a Si-based device on the silicon substrate is provided. The silicon substrate includes the GaN-based device on a SiC crystalline region. The SiC crystalline region is formed in the silicon substrate. The silicon substrate also includes the Si-based device on a silicon region, and the silicon region is next to the SiC crystalline region on the silicon substrate.

Abstract: A method of fabricating a semiconductor structure includes forming an isolation feature in a substrate, removing a portion of the isolation feature and a portion of the substrate underneath the removed portion of the isolation feature to form a trench in the substrate, and forming a trapping feature around a bottom portion of the trench. A first sidewall and a second sidewall of the trench are in direct contact with the isolation feature, and a bottom surface of the trench is below a bottom surface of the isolation feature.

Abstract: A trench metal oxide semiconductor field effect transistor (MOSFET) includes an epitaxial layer over a substrate a first trench in the epitaxial layer and a second trench in the epitaxial layer. A depth of the first trench is different from a depth of the second trench. The trench MOSFET further includes a source region surrounding the self-aligned source contact, wherein the source region is convex-shaped. The trench MOSFET further includes a self-aligned source contact between the first trench and the second trench; wherein the self-aligned source contact is connected to the source region.

Abstract: A semiconductor structure includes a substrate, a first power device and a second power device in the substrate, at least one isolation feature between the first and second power device, and a trapping feature adjoining the at least one isolation feature in the substrate.

Abstract: A semiconductor structure and a method for fabricating the same are provided. The semiconductor structure includes a wafer substrate having a top surface and a bottom surface, and a conductive pillar in the wafer substrate defined by a deep trench insulator through the top surface and the bottom surface of the wafer substrate. The method for fabricating the semiconductor structure includes following steps. A deep trench is formed from a top surface of a wafer substrate to define a conductive region in the wafer substrate. The conductive region is doped with a dopant. The deep trench is filled with an insulation material to form a deep trench insulator. And the wafer substrate is thinned from a bottom surface of the wafer substrate to expose the deep trench insulator and isolate the conductive region to form a conductive pillar.

Abstract: Representative methods of manufacturing memory devices include forming a transistor with a gate disposed over a workpiece, and forming an erase gate with a tip portion extending towards the workpiece. The transistor includes a source region and a drain region disposed in the workpiece proximate the gate. The erase gate is coupled to the gate of the transistor.

Abstract: A semiconductor arrangement and method of formation are provided. A method of semiconductor formation includes using a single photoresist to mask off an area where low voltage devices are to be formed as well as gate structures of high voltage devices while performing high energy implants for the high voltage devices. Another method of semiconductor fabrication includes performing high energy implants for high voltage devices through a patterned photoresist where the photoresist is patterned prior to forming gate structures for high voltage devices and prior to forming gate structures for low voltage devices. After the high energy implants are performed, subsequent processing is performed to form high voltage devices and low voltage devices. High voltage device and low voltage devices are thus formed in a CMOS process without need for additional masks.

Abstract: Memory devices and methods of manufacture thereof are disclosed. In one embodiment, a memory device includes a transistor having a gate disposed over a workpiece. The transistor includes a source region and a drain region disposed in the workpiece proximate the gate. The memory device includes an erase gate having a tip portion that extends towards the workpiece. The erase gate is coupled to the gate of the transistor.

Abstract: A semiconductor structure and a method for fabricating the same are provided. The semiconductor structure includes a wafer substrate having a top surface and a bottom surface, and a conductive pillar in the wafer substrate defined by a deep trench insulator through the top surface and the bottom surface of the wafer substrate. The method for fabricating the semiconductor structure includes following steps. A deep trench is formed from a top surface of a wafer substrate to define a conductive region in the wafer substrate. The conductive region is doped with a dopant. The deep trench is filled with an insulation material to form a deep trench insulator. And the wafer substrate is thinned from a bottom surface of the wafer substrate to expose the deep trench insulator and isolate the conductive region to form a conductive pillar.

Abstract: A semiconductor structure and a method for fabricating the same are provided. The semiconductor structure includes a wafer substrate having a top surface and a bottom surface, and a conductive pillar in the wafer substrate defined by a deep trench insulator through the top surface and the bottom surface of the wafer substrate. The method for fabricating the semiconductor structure includes following steps. A deep trench is formed from a top surface of a wafer substrate to define a conductive region in the wafer substrate. The conductive region is doped with a dopant. The deep trench is filled with an insulation material to form a deep trench insulator. And the wafer substrate is thinned from a bottom surface of the wafer substrate to expose the deep trench insulator and isolate the conductive region to form a conductive pillar.

Abstract: A method of forming a device includes forming a buried well region of a first dopant type in a substrate. A well region of the first dopant type is formed over the buried well region. A first well region of a second dopant type is formed between the well region of the first dopant type and the buried well region of the first dopant type. A second well region of the second dopant type is formed in the well region of the first dopant type. An isolation structure is formed at least partially in the well region of the first dopant type. A first gate electrode is formed over the isolation structure and the second well region of the second dopant type.

Abstract: A semiconductor structure and a method for fabricating the same are provided. The semiconductor structure includes a wafer substrate having a top surface and a bottom surface, and a conductive pillar in the wafer substrate defined by a deep trench insulator through the top surface and the bottom surface of the wafer substrate. The method for fabricating the semiconductor structure includes following steps. A deep trench is formed from a top surface of a wafer substrate to define a conductive region in the wafer substrate. The conductive region is doped with a dopant. The deep trench is filled with an insulation material to form a deep trench insulator. And the wafer substrate is thinned from a bottom surface of the wafer substrate to expose the deep trench insulator and isolate the conductive region to form a conductive pillar.